VISHAY SI4936BDY Dual N-Channel 30-V D-S MOSFET Owner’s Manual
- June 13, 2024
- VISHAY
Table of Contents
Si4936BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V)| R DS(on) ( W )| I D (A)|
Q g (Typ.)
30| 0.035 at VGS = 10 V| 6.9| 4.5 nC
0.051 at VGS = 4.5 V| 5.7
Ordering Information:
Si4936BDY-T1-E3 (Lead (Pb)-free)
Si4936BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition ®
- TrenchFET Power MOSFET
- Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
- Low Current DC/DC Conversion
- Notebook System Power
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter| Symbol| Limit| Unit
Drain-Source Voltage| VDS| 30| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current (TJ = 150 °C)| TC = 25 °C| ID| 6.9|
A
TC = 70 °C| 5.5
TA = 25 °C| 5.9a, b
TA = 70 °C| 4.7a, b
Pulsed Drain Current| IDM| 30
Continuous Source-Drain Diode Current| TC = 25 °C| IS| 2.3
TA = 25 °C| 1.7a, b
Maximum Power Dissipation| TC = 25 °C| PD| 2.8| W
TC = 70 °C| 1.8
TA = 25 °C| 2a, b
TA = 70 °C| 1.3a, b
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to 150| °C
THERMAL RESISTANCE RATINGS
Parameter| Symbol| Typical| Maximum| Unit
Maximum Junction-to-Ambienta, c| t £ 10 s| RthJA| 58| 62.5| °C/W
Maximum Junction-to-Foot (Drain)| Steady State| RthJF| 38| 45
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter| Symbol| Test Conditions| Min.| Typ.|
Max.| Unit
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 µA| 30| | | V
VDS Temperature Coefficient| DVDS/TJ| ID = 250 µA| | 26.5| | mV/°C
VGS(th) Temperature Coefficient| DVGS(th)/TJ| | – 5.6|
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS , ID = 250 µA| 1.5| | 3| V
Gate-Source Leakage| IGSS| VDS = 0 V, VGS = ± 20 V| | | ± 100| ns
Zero Gate Voltage Drain Current
| IDSS| VDS = 30 V, VGS = 0 V| | | 1|
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C| | | 10
On-State Drain Currenta| ID(on)| VDS ³ 5 V, VGS = 10 V| 30| | | A
Drain-Source On-State Resistancea| RDS(on)| VGS = 10 V, ID = 5.9 A| | 0.029|
0.035| W
VGS = 4.5 V, ID = 4.9 A| | 0.042| 0.051
Forward Transconductancea| gfs| VDS = 10 V, ID = 5.9 A| | 12| | S
Dynamic b
Input Capacitance| Ciss|
VDS = 15 V, VGS = 0 V, f = 1 MHz
| | 530| |
pF
Output Capacitance| Coss| | 100|
Reverse Transfer Capacitance| Crss| | 55|
Total Gate Charge| Qg| VDS = 15 V, VGS = 10 V, ID = 5.9 A| | 9.1| 15|
nC
VDS = 15 V, VGS = 4.5 V, ID = 5.9 A
| | 4.5| 7
Gate-Source Charge| Qgs| | 1.8|
Gate-Drain Charge| Qgd| | 1.7|
Gate Resistance| Rg| f = 1 MHz| | 3| | W
Turn-On Delay Time| td(on)| VDD = 15 V, RL = 3.2 W
ID @ 4.7 A, VGEN = 4.5 V, Rg = 1 W
| | 20| 30|
ns
Rise Time| tr| | 130| 195
Turn-Off Delay Time| td(off)| | 12| 20
Fall Time| tf| | 32| 50
Turn-On Delay Time| td(on)|
VDD = 15 V, RL = 3.2 W
ID @ 4.7 A, VGEN = 10 V, Rg = 1 W
| | 5| 10
Rise Time| tr| | 25| 40
Turn-Off Delay Time| td(off)| | 12| 20
Fall Time| tf| | 10| 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| TC = 25 °C| | | 6.9| A
Pulse Diode Forward Current| ISM| | | | 30
Body Diode Voltage| VSD| IS = 4.7 A, VGS = 0 V| | 0.8| 1.2| V
Body Diode Reverse Recovery Time| trr|
IF = 4.7 A, dI/dt = 100 A/µs, TJ = 25 °C
| | 20| 40| ns
Body Diode Reverse Recovery Charge| Qrr| | 12| 24| nC
Reverse Recovery Fall Time| ta| | 11| | ns
Reverse Recovery Rise Time| tb| | 9|
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation
PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance,
and is more useful in settling the upper dissipation limit for cases where
additional heatsinking is used. It is used to determine the current rating,
when this rating falls below the package limit.
Vishay Siliconix
maintains worldwide manufacturing capability. Products may be manufactured at
one of several qualified locations. Reliability data for Silicon Technology
and Package Reliability represent a composite of all qualified locations. For
related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?74469.
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
| DIM | MILLIMETERS | INCHES |
|---|---|---|
| Min | Max | Min |
| A | 1.35 | 1.75 |
| A1 | 0.10 | 0.20 |
| B | 0.35 | 0.51 |
| C | 0.19 | 0.25 |
| D | 4.80 | 5.00 |
| E | 3.80 | 4.00 |
| e | 1.27 BSC | 0.050 BSC |
| H | 5.80 | 6.20 |
| h | 0.25 | 0.50 |
| L | 0.50 | 0.93 |
| q | 0° | 8° |
| S | 0.44 | 0.64 |
ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498
RECOMMENDED MINIMUM PADS FOR SO-8
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Revision: 01-Jan-2022
Document Number: 91000