VISHAY IRF9630 TO-220AB Power MOSFET Owner’s Manual

: June 3, 2024
: VISHAY

Table of Contents

VISHAY IRF9630 TO-220AB Power MOSFET
Power MOSFET
DESCRIPTION
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Package Information
Disclaimer
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY IRF9630 TO-220AB Power MOSFET

VISHAY-IRF9630-TO-220AB-Power-MOSFET-product

Power MOSFET

TO-220AB

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-1

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
P-channel
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF9630PbF
Lead (Pb)-free and halogen-free| IRF9630PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -200| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| -6.5|

A

TC = 100 °C| -4.0
Pulsed drain current a| IDM| -26
Linear derating factor| | 0.59| W/°C
Single pulse avalanche energy b| EAS| 500| mJ
Repetitive avalanche current a| IAR| -6.4| A
Repetitive avalanche energy a| EAR| 7.4| mJ
Maximum power dissipation| TC = 25 °C| PD| 74| W
Peak diode recovery dV/dt c| dV/dt| -5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 Ω, IAS = -6.5 A (see fig. 12)
ISD ≤ -6.5 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -200| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –| -0.24| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –| -4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -200 V, VGS = 0 V| –| –| -100| μA
VDS = -160 V, VGS = 0 V, TJ = 125 °C| –| –| -500
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = -3.9 A b| –| –| 0.80| W
Forward transconductance| gfs| VDS = -50 V, ID = -3.9 A b| 2.8| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = -25 V,

f = 1.0 MHz, see fig. 5

| –| 700| –|

pF

Output capacitance| Coss| –| 200| –
Reverse transfer capacitance| Crss| –| 40| –
Total gate charge| Qg|

VGS = -10 V

| ID = -6.5 A, VDS = -160 V,

see fig. 6 and 13 b

| –| –| 29|

nC

Gate-source charge| Qgs| –| –| 5.4
Gate-drain charge| Qgd| –| –| 15
Turn-on delay time| td(on)|

VDD = -100 V, ID = -6.5 A,

Rg = 12 W, RD = 15 W, see fig. 10 b

| –| 12| –|

ns

Rise time| tr| –| 27| –
Turn-off delay time| td(off)| –| 28| –
Fall time| tf| –| 24| –
Gate input resistance| LD| Between lead, D

6 mm (0.25″) from package and center of

G

die contact

S

| –| 4.5| –|

nH

Internal drain inductance| LS| –| 7.5| –
Internal source inductance| Rg| f = 1 MHz, open drain| 0.6| –| 3.7| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol

D

showing the

integral reverse G

p -n junction diode

S

| –| –| -6.5|

A

Pulsed diode forward current a| ISM| –| –| -26
Body diode voltage| VSD| TJ = 25 °C, IS = -6.5 A, VGS = 0 V b| –| –| -6.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs b| –| 200| 300| ns
Body diode reverse recovery charge| Qrr| –| 1.9| 2.9| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-4

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 4 – Normalized On-Resistance vs. Temperatur

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-5

Fig. 2 – Typical Output Characteristics, TC = 150 °

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-6

Fig. 3 – Typical Transfer Characteristics

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-6

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 9 – Maximum Drain Current vs. Case Temperature

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-7

Fig. 8 – Maximum Safe Operating Are

Fig. 10b – Switching Time Waveforms

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Cas

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-11

Fig. 12a – Unclamped Inductive Test Circuit

Fig. 12b – Unclamped Inductive Waveform

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-12

Fig. 12c – Maximum Avalanche Energy vs. Drain Curren

Fig. 13a – Basic Gate Charge Waveform

Fig. 13c – Gate Charge Test Circuit

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-14

Peak Diode Recovery dV/dt Test Circuit

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-15

Fig. 14 – For P-Channel

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-16

Package Information

VISHAY-IRF9630-TO-220AB-Power-MOSFET-fig-17

DIM.	MILLIMETERS	INCHES
MIN.	MAX.	MIN.
A	4.24	4.65
b	0.69	1.02
b(1)	1.14	1.78
c	0.36	0.61
D	14.33	15.85
E	9.96	10.52
e	2.41	2.67
e(1)	4.88	5.28
F	1.14	1.40
H(1)	6.10	6.71
J(1)	2.41	2.92
L	13.36	14.40
L(1)	3.33	4.04
Ø P	3.53	3.94
Q	2.54	3.00

ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031

Note

M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein.
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