VISHAY IRF840S, SiHF840S Power MOSFET Owner’s Manual

: September 28, 2024
: VISHAY

Table of Contents

VISHAY IRF840S, SiHF840S Power MOSFET
Product Description
FAQ
overview
FEATURES
DESCRIPTION
SPECIFICATIONS
TYPICAL CHARACTERISTICS
Dimensions
CONTACT
References
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VISHAY IRF840S, SiHF840S Power MOSFET

Product Description

The IRF840S and SiHF840S are N-Channel Power MOSFETs designed for high-power applications. They come in a D2PAK package and are\ suitable for various electronic circuits requiring high voltage switching.

FAQ

What is the maximum Drain-Source Voltage (VDS) of the IRF840S and SiHF840S MOSFETs?
The maximum Drain-Source Voltage (VDS) is 500V when the Gate-Source Voltage (VGS) is 10V.
Are the IRF840S and SiHF840S Lead (Pb)-free?
The SiHF840S-GE3 variant is Lead (Pb)-free and Halogen-free, while the IRF840SPbF variant is Lead (Pb)-free.
What is the typical On-State Resistance (RDS(on)) of these MOSFETs?
The typical On-State Resistance (RDS(on)) is 63 ohms for these MOSFETs.

overview

PRODUCT SUMMARY

FEATURES

Surface-mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirement
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and/or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high-current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application

ORDERING INFORMATION

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 500| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 8.0|

A

TC = 100 °C| 5.1
Pulsed Drain Current a| IDM| 32
Linear Derating Factor| | 1.0| W/°C
Linear Derating Factor (PCB mount) e| 0.025
Single Pulse Avalanche Energy b| EAS| 510| mJ
Avalanche Current a| IAR| 8.0| A
Repetitive Avalanche Energy a| EAR| 13| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 125| W
Maximum Power Dissipation (PCB mount) e| TA = 25 °C| 3.1
Peak Diode Recovery dV/dt c| dV/dt| 3.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Soldering Recommendations (Peak temperature) d| For 10 s| | 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12)
c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62|

°C/W

Maximum Junction-to-Ambient (PCB mount) a| RthJA| –| 40
Maximum Junction-to-Case (Drain)| RthJC| –| 1.0

Note

a. When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0, ID = 250 μA| 500| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.78| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 4.8 A b| –| –| 0.85| W
Forward Transconductance| gfs| VDS = 50 V, ID = 4.8 A b| 4.9| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1300| –|

pF

Output Capacitance| Coss| –| 310| –
Reverse Transfer Capacitance| Cross| –| 120| –
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 8.0 A, VDS = 400 V,

See Fig. 6 and 13 b

| –| –| 63|

nC

Gate-Source Charge| Qgs| –| –| 9.3
Gate-Drain Charge| Qgd| –| –| 32
Turn-On Delay Time| td(on)|

VDD = 250 V, ID = 8.0 A,

Rg = 9.1 W, RD = 31 W, see fig. 10b

| –| 14| –|

ns

Rise Time| tr| –| 23| –
Turn-Off Delay Time| td(off)| –| 49| –
Fall Time| tf| –| 20| –
Internal Drain Inductance| LD| Between lead,

6 mm (0.25″) from

package and center of

die contact

| –| 4.5| –|

nH

Internal Source Inductance| LS| –| 7.5| –
Gate Input Resistance| Rg| f = 1 MHz, open drain| 0.6| –| 2.8| W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol

showing the

integral reverse

p – n junction diode

| –| –| 8.0|

A

Pulsed Diode Forward Current a| ISM| –| –| 32
Body Diode Voltage| VSD| TJ = 25 °C, IS = 8.0 A, VGS = 0 V b| –| –| 2.0| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs b| –| 460| 970| ns
Body Diode Reverse Recovery Charge| Qrr| –| 4.2| 8.9| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

TO-263AB (HIGH VOLTAGE)

| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D1| 6.86| –| 0.270| –
A1| 0.00| 0.25| 0.000| 0.010| E| 9.65| 10.67| 0.380| 0.420
b| 0.51| 0.99| 0.020| 0.039| E1| 6.22| –| 0.245| –
b1| 0.51| 0.89| 0.020| 0.035| e| 2.54 BSC| 0.100 BSC
b2| 1.14| 1.78| 0.045| 0.070| H| 14.61| 15.88| 0.575| 0.625
b3| 1.14| 1.73| 0.045| 0.068| L| 1.78| 2.79| 0.070| 0.110
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.066
c1| 0.38| 0.58| 0.015| 0.023| L2| –| 1.78| –| 0.070
c2| 1.14| 1.65| 0.045| 0.065| L3| 0.25 BSC| 0.010 BSC
D| 8.38| 9.65| 0.330| 0.380| L4| 4.78| 5.28| 0.188| 0.208
ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994.
Dimensions are shown in millimeters (inches).
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
Thermal PAD contour is optional within dimension E, L1, D1 and E1.
Dimensions b1 and c1 apply to base metal only.
Datum A and B to be determined at datum plane H.
Outline conforms to JEDEC outline to TO-263AB.

Dimensions

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

Disclaimer

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suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets
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CONTACT

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: hvm@vishay.com
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