VISHAY IRFP264 Power MOSFET Owner’s Manual

: September 11, 2024
: VISHAY

Table of Contents

VISHAY IRFP264 Power MOSFET
DESCRIPTION
Specifications:
Product Usage Instructions:
Description:
Features:
Parameter Details:
Thermal Resistance Ratings:
- FAQ:
Q: What is the maximum Drain-Source Breakdown Voltage for
Q: Is IRFP264 RoHS-compliant?
Q: What is the Body Diode Voltage of IRFP264?

VISHAY IRFP264 Power MOSFET

OWNER’S MANUAL

MODEL: TO-247AC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Specifications:

Brand: Vishay Siliconix
Model: IRFP264
Type: Power MOSFET
Package Type: TO-247AC
Channel Type: N-Channel
Drain-Source Voltage (VDS): 250V
Drain-Source On-Resistance (RDS(on)): 0.075Ω
Total Gate Charge (Qg): 98nC (max.)

Product Usage Instructions:

Description:

The IRFP264 is a Power MOSFET designed for various applications
requiring high power handling capabilities.

Features:

RoHS-compliant
Single pulse avalanche energy
Repetitive avalanche current and energy

Parameter Details:

Key parameters include Drain-Source Voltage (VDS), Gate-Source
Voltage (VGS), Continuous Drain Current (ID), Maximum Power
Dissipation (PD), and more as listed in the specifications.

Thermal Resistance Ratings:

Maximum Junction-to-Ambient: 40°C/W
Case-to-Sink, flat, greased surface: 0.45°C/W
Maximum Junction-to-Case (Drain): 0.24°C/W

FAQ:

Q: What is the maximum Drain-Source Breakdown Voltage for

IRFP264?

A: The maximum Drain-Source Breakdown Voltage is 250V with VGS =
0V and ID = 250A.

Q: Is IRFP264 RoHS-compliant?

A: Yes, the IRFP264 is RoHS-compliant as per the datasheet
provided.

Q: What is the Body Diode Voltage of IRFP264?

A: The Body Diode Voltage is 1.8V for IRFP264.

“`

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IRFP264
Vishay Siliconix

Power MOSFET

D TO-247AC

G

S
D G

S N-Channel MOSFET

PRODUCT SUMMARY

VDS (V) RDS(on) () Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration

250 VGS = 10 V
210 35 98 Single

0.075

ORDERING INFORMATION
Package Lead (Pb)-free

FEATURES

· Dynamic dV/dt Rating

· Repetitive Avalanche Rated

Available

· Isolated Central Mounting Hole · Fast Switching

Available

· Ease of Paralleling

· Simple Drive Requirements

· Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

TO-247AC IRFP264PbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor

VDS

VGS

VGS at 10 V

TC = 25 °C TC = 100 °C

ID

IDM

Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c

TC = 25 °C

EAS IAR EAR PD dV/dt

Operating junction and storage temperature range Soldering recommendations (peak temperature) d

for 10 s

TJ, Tstg

Mounting torque

6-32 or M3 screw

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 1.1 mH, Rg = 25 , IAS = 38 A (see fig. 12) c. ISD 38 A, dI/dt 210 A/s, VDD VDS, TJ 150 °C d. 1.6 mm from case

LIMIT 250 ± 20 38 24 150 2.2 1000 38 28 280 4.8
-55 to +150 300 10 1.1

UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N · m

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IRFP264
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)

SYMBOL RthJA RthCS RthJC

TYP. –
0.24 –

MAX. 40 0.45

UNIT °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Static

MIN. TYP. MAX. UNIT

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 A

250

–

V

VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Internal drain inductance

VDS/TJ VGS(th) IGSS
IDSS
RDS(on) gfs
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf LD

Internal source inductance

LS

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

IS

Pulsed diode forward current a

ISM

Reference to 25 °C, ID = 1 mA

VDS = VGS, ID = 250 A

VGS = ± 20 V

VDS = 250 V, VGS = 0 V

VDS = 200 V, VGS = 0 V, TJ = 125 °C

VGS = 10 V

ID = 23 A b

VDS = 50 V, ID = 23 A b

–

0.37

–

V/°C

2.0

–

4.0

V

–

± 100 nA

–

25

A

–

250

–

0.075

20

–

S

VGS = 0 V,

–

VDS = 25 V,

–

f = 1.0 MHz, see fig. 5

–

VGS = 10 V

–

ID = 38 A, VDS = 200 V, see fig. 6 and 13 b

–

VDD = 125 V, ID = 38 A,

–

Rg = 4.3 , RD = 3.2 , see fig. 10 b

–

Between lead,

D

–

6 mm (0.25″) from

package and center of

die contact

G

–

S

5400

–

870

–

pF

150

–

210

–

35

nC

–

98

22

–

99

–

ns

110

–

92

–

5.0

–

nH

13

–

MOSFET symbol
showing the integral reverse p – n junction diode

D
G S

–

38

A

–

150

Body diode voltage

VSD

TJ = 25 °C, IS = 38 A, VGS = 0 V b

–

1.8

V

Body diode reverse recovery time Body diode reverse recovery charge

trr Qrr

TJ = 25 °C, IF = 38 A, dI/dt = 100 A/s b

–

410

620

ns

5.7

8.6

C

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s; duty cycle 2 %

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www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFP264
Vishay Siliconix

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 2 – Typical Output Characteristics, TC = 150 °C

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 3 – Typical Transfer Characteristics

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

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Fig. 7 – Typical Source-Drain Diode Forward Voltage

IRFP264
Vishay Siliconix

VDS VGS RG

RD D.U.T.

10 V
Pulse width 1 µs Duty factor 0.1 %

+- VDD

Fig. 10a – Switching Time Test Circuit

VDS 90 %

10 % VGS

td(on) tr

td(off) tf

Fig. 10b – Switching Time Waveforms

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature

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IRFP264
Vishay Siliconix

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS Vary tp to obtain required IAS
RG
10 V tp

L
D.U.T IAS
0.01

+ – VDD
A

Fig. 12a – Unclamped Inductive Test Circuit

VDS

VDS
tp VDD

IAS Fig. 12b – Unclamped Inductive Waveforms

Fig. 12c – Maximum Avalanche Energy vs. Drain Current

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10 V QGS
VG

QG QGD

Charge

Fig. 13a – Basic Gate Charge Waveform

IRFP264
Vishay Siliconix

Current regulator Same type as D.U.T.

12 V

50 k

0.2 µF

0.3 µF

+ D.U.T. – VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b – Gate Charge Test Circuit

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D.U.T.
+ –

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

· Low stray inductance

· Ground plane

· Low leakage inductance

current transformer

–

IRFP264
Vishay Siliconix

Rg

· dV/dt controlled by Rg

· Driver same type as D.U.T. · ISD controlled by duty factor “D”

– VDD

· D.U.T. – device under test

Driver gate drive

P.W.

Period

D =

P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse

recovery current

Body diode forward current dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt VDD

Re-applied voltage

Body diode forward drop Inductor current

Ripple 5 %

ISD

Note a. VGS = 5 V for logic level devices

Fig. 14 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91217.

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Package Information
Vishay Siliconix

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

DIM. A A1 A2 b b1 b2 b3 b4 b5 c c1 D

MILLIMETERS

MIN.

NOM.

4.83

5.02

2.29

2.41

1.17

1.27

1.12

1.20

1.12

1.20

1.91

2.00

1.91

2.00

2.87

3.00

2.87

3.00

0.40

0.50

0.40

0.50

20.40

20.55

MAX. 5.21 2.55 1.37 1.33 1.28 2.39 2.34 3.22 3.18 0.60 0.56 20.70

NOTES
6 6, 8
6 4

DIM. D1 D2 E E1 E2 e L L1 Ø P Ø P1 Q S

MIN. 16.46 0.56 15.50 13.46 4.52
14.90 3.96 3.56
5.31

MILLIMETERS NOM. 16.76 0.66 15.70 14.02 4.91
5.46 BSC 15.15 4.06 3.61 7.19 ref. 5.50
5.51 BSC

MAX. 17.06 0.76 15.87 14.16 5.49
15.40 4.16 3.65
5.69

NOTES 5
4 5 3
6 7

Notes
(1) Package reference: JEDEC® TO247, variation AC (2) All dimensions are in mm (3) Slot required, notch may be rounded (4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body (5) Thermal pad contour optional with dimensions D1 and E1 (6) Lead finish uncontrolled in L1 (7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm (8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition

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VERSION 2: FACILITY CODE = Y

B 3 R/2
Q

4 E
E/2 S

2 x R

(2)

D

12

3

5 L1

C

L

2 x b2

3 x b

2x e

b4

0.10 M C A M

Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain

See view B

Package Information
Vishay Siliconix

A A2 A
4
D

A 7 ØP Ø k M DBM
D2

(Datum B) ØP1
4 D1

4 Thermal pad

A C A1
D DE E CC
View B

Planting

4 E1 0.01 M D B M View A – A
(b1, b3, b5)

Base metal

(c)

c1

(b, b2, b4) (4)
Section C – C, D – D, E – E

DIM. A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1

MILLIMETERS

MIN.

MAX.

4.58

5.31

2.21

2.59

1.17

2.49

0.99

1.40

0.99

1.35

1.53

2.39

1.65

2.37

2.42

3.43

2.59

3.38

0.38

0.86

0.38

0.76

19.71

20.82

13.08

–

NOTES

DIM. D2 E E1 e Ø k L L1 Ø P Ø P1 Q R S

MILLIMETERS

MIN.

MAX.

0.51

1.30

15.29

15.87

13.72

–

5.46 BSC

0.254

14.20

16.25

3.71

4.29

3.51

3.66

–

7.39

5.31

5.69

4.52

5.49

5.51 BSC

NOTES

Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at
the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″) (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c

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VERSION 3: FACILITY CODE = N

B R/2

E N

Q

R

S

D

Package Information
Vishay Siliconix

D2

A

A P1

P

A2

D

c1 D1

K M DBM

L1

C

b2 b

b4 e

0.10 M C A M

L

C A1
Base metal

E1 0.01 M D B M
b1, b3, b5

c

Plating

b, b2, b4

MILLIMETERS

DIM.

MIN.

A

4.65

A1

2.21

A2

1.17

b

0.99

b1

0.99

b2

1.65

b3

1.65

b4

2.59

b5

2.59

c

0.38

c1

0.38

D

19.71

D1

13.08

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

MAX. 5.31 2.59 1.37 1.40 1.35 2.39 2.34 3.43 3.38 0.89 0.84 20.70
–

DIM. D2 E E1 e k L L1 N P P1 Q R S

MIN. 0.51 15.29 13.46
14.20 3.71
3.56 –
5.31 4.52

5.46 BSC 0.254
7.62 BSC
5.51 BSC

MAX. 1.35 15.87
–
16.10 4.29
3.66 7.39 5.69 5.49

Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at
the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

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Disclaimer

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Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Vishay products are not designed for use in life-saving or life-sustaining applications or any application in which the failure of the Vishay product could result in personal injury or death unless specifically qualified in writing by Vishay. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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