VISHAY IRF840APBF Power Mosfet Instruction Manual
- September 7, 2024
- VISHAY
Table of Contents
VISHAY IRF840APBF Power Mosfet
Product Information:
Specifications
- Manufacturer: Vishay Siliconix
- Product Name: IRF840A Power MOSFET
- Package Type: D TO-220AB
- Channel Type: N-Channel MOSFET
- Drain-Source Voltage (VDS): 500V
- Gate-Source Voltage (VGS): 10V
- Continuous Drain Current (ID): 38A
- On-State Resistance (RDS(on)): 0.85Ω
Frequently Asked Questions
Q: Is the IRF840A MOSFET RoHS compliant?
A: The datasheet specifies RoHS-compliant and non-RoHS-compliant parts. Please refer to the datasheet for specific details.
Q: What is the maximum drain-source voltage of the IRF840A?
A: The maximum drain-source voltage (VDS) is 500V.
Q: Can the IRF840A MOSFET handle pulsed drain currents?
A: Yes, the MOSFET can handle pulsed drain currents as specified in the datasheet.
N-Channel MOSFET
FEATURES
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Effective Coss specified
- Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptable power supply
- High speed power switching
TYPICAL SMPS TOPOLOGIES
- Two transistor forward
- Half bridge
- Full bridge
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRF840APbF
Lead (Pb)-free and halogen-free| IRF840APbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 30
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 8.0|
A
TC = 100 °C| 5.1
Pulsed drain current a| IDM| 32
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 510| mJ
Repetitive avalanche current a| IAR| 8.0| A
Repetitive avalanche energy a| EAR| 13| mJ
Maximum power dissipation| TC = 25 °C| PD| 125| W
Peak diode recovery dV/dt c| dV/dt| 5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12)
- c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|
°C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0
NOTE
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
- c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
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References
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