VISHAY IRFBC40A Power MOSFET Instruction Manual
- June 3, 2024
- VISHAY
Table of Contents
IRFBC40A Power MOSFET
Instruction Manual
IRFBC40A
Vishay Siliconix
Power MOSFET
IRFBC40A Power MOSFET
PRODUCT SUMMARY
| VDS (V) | 600 |
|---|---|
| RDs(on) (Ω) | VGs = 10 V |
| Qg max. (nC) | 42 |
| Qgs (nC) | 10 |
| Qgd (nC) | 20 |
| Configuration | Single |
FEATURES
-
Low gate charge Qg results in simple drive Requirement
-
Improved gate, avalanche and dynamic dV/dt ruggedness
-
Fully characterized capacitance and avalanche voltage and current
-
Effective Coss specified
-
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptible power supply
- High speed power switching
TYPICAL SMPS TOPOLOGIES
- Single transistor forward
ORDERING INFORMATION
| Package | TO-220AB |
|---|---|
| Lead (Pb)-free | IRFBC40APbF |
| Lead (Pb)-free and halogen-free | IRFBC40APbF-BE3 |
ABSOLUTE MAXIMUM RATINGS (To = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| \ tips| 600| V
Gate-source voltage| Vas| ± 30
Continuous drain current| Vas at 10 V| Tc = 25 °C| ID| 6.| A
Tc = 100 °C| 4.
Pulsed drain current a| IoM| 25
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 570| mJ
Repetitive avalanche current a| IAR| 6.| A
Repetitive avalanche energy a| EAR| 13| mJ
Maximum power dissipation| To = 25 t| Pc| 125| W
Peak diode recovery dV/dt c| dV/dt| 6.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| oc
Soldering recommendations (peak temperature) 0| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf • in
1.| N • m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Starting TJ = 25 °C, L = 29.6 mH, Rg = 25 Ω, IAS = 6.2 A (see fig. 12)
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
|---|---|---|---|---|
| Maximum junction-to-ambient | RthJA | 62 | °C/VV | |
| Case-to-sink, flat, greased surface | Rthcs | 0.50 | – | |
| Maximum junction-to-case (drain) | RthJC | 1.0 |
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-source breakdown voltage | VDS | VG5 = 0 V, ID = 250 pA | 600 | – | V | |
| VDS temperature coefficient | AVosiTJ | Reference to 25 °C, ID = 1 mA | 0.66 | |||
| 1 | V/°C | |||||
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 pA | 2.0 | – | 4.0 | V |
| Gate-source leakage | IGSS | VGS = ± 30 V | – | ± 100 | nA | |
| Zero gate voltage drain current | IDSS | VDS = 600 V, VGs = 0 V | – | 25 | VA | |
| VDS = 480 V, VGS = 0 V, Tj = 125 °C | – | 250 | ||||
| Drain-source on-state resistance | %S(on) | VGS = 10 V | I ID = 3.7 A b | – | 1. |
52
Forward transconductance| grs| VDS = 50 V, ID = 3.7 A| | –| –| S
Dynamic
Input capacitance| C,„| VGs = 0 V,
vos= 25 V,
f = 1.0 MHz, see fig. 5| | 1036| | pF
Output capacitance| Cos,| –| 136| –
Reverse transfer capacitance| Cm| –| 7.0| –
Output capacitance| Coss| VGs = 0 V| VDS = 1.0 V, f = 1.0 MHz| | 1487| –
VDs = 480 V, f = 1.0 MHz| | 36| –
Effective output capacitance| Coss eff.| VDs = 0 V to 480 V C| | 48| –
Total gate charge| 9| V 10 V
G5 =| ID = 6.2 A, VDS = 480 V
see fig. 6 and 13 b| | –| 42| nC
Gate-source charge| ags| | –| 10
Gate-drain charge| Ogd| | –| 20
Turn-on delay time| td(on)| VDD = 300 V, ID = 6.2 A
Rg = 9.1 f2, RD = 47 a
see fig 10 b| | 13| –| ns
Rise time| t,| | 23| –
Turn-off delay time| td(ow)| | 31| –
Fall time| t,| | 18| –
Gate input resistance| R9| f = 1 MHz, open drain| 0.6| –| 4.| i2
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| Is| MOSFET symbol showing the integral
reverse p – n junction diode| | –| 6.| A
Pulsed diode forward current a| ISM| | –| 25
Body diode voltage| VS0| Ii= 25 °C, Is = 6.2 A, VGs=0Vb| | –| 2.| V
Body diode reverse recovery time| trr| Tj = 25 °C, IF = 6.2 A, dl/dt = 100
A/ps b| | 431| 647| ns
Body diode reverse recovery charge| Qrr| | 2.| 3.| pC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by Ls and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss
while VDS is rising from 0 % to 80 % VDS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFBC40A
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91112.
Package Information
Vishay Siliconix TO-220-1
| DIM. | MILLIMETERS | INCHES |
|---|---|---|
| MIN. | MAX. | MIN. |
| A | 4. | 5. |
| b | 0.69 | 1. |
| b(1) | 1. | 2. |
| c | 0.36 | 0.61 |
| D | 14. | 16. |
| E | 10. | 11. |
| e | 2. | 3. |
| e(1) | 5. | 5. |
| F | 1. | 1.40 |
| 1-1(1) | 6.10 | 7. |
| J(1) | 2. | 3. |
| L | 13. | 14.40 |
| L(1) | 3. | 4. |
| 0 P | 4. | 4. |
| 0 | 3. | 3.00 |
ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink
hole for HVM
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Revision: 01-Jan-2022
Document Number: 91000
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References
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