VISHAY IRFBC40A Power MOSFET Instruction Manual

IRFBC40A Power MOSFET
Instruction Manual IRFBC40A
Vishay Siliconix
Power MOSFET

IRFBC40A Power MOSFET

PRODUCT SUMMARY

FEATURES

• Low gate charge Qg results in simple drive Requirement

• Improved gate, avalanche and dynamic dV/dt ruggedness

• Fully characterized capacitance and avalanche voltage and current

• Effective Coss specified

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are
  RoHS-compliant and/or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
  Please see the information/tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Single transistor forward

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (To = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| \ tips| 600| V
Gate-source voltage| Vas| ± 30
Continuous drain current| Vas at 10 V| Tc = 25 °C| ID| 6.| A
Tc = 100 °C| 4.
Pulsed drain current a| IoM| 25
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 570| mJ
Repetitive avalanche current a| IAR| 6.| A
Repetitive avalanche energy a| EAR| 13| mJ
Maximum power dissipation| To = 25 t| Pc| 125| W
Peak diode recovery dV/dt c| dV/dt| 6.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| oc
Soldering recommendations (peak temperature) 0| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf • in
1.| N • m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 29.6 mH, Rg = 25 Ω, IAS = 6.2 A (see fig. 12)
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

52
Forward transconductance| grs| VDS = 50 V, ID = 3.7 A| | –| –| S
Dynamic
Input capacitance| C,„| VGs = 0 V,
vos= 25 V,
f = 1.0 MHz, see fig. 5| | 1036| | pF
Output capacitance| Cos,| –| 136| –
Reverse transfer capacitance| Cm| –| 7.0| –
Output capacitance| Coss| VGs = 0 V| VDS = 1.0 V, f = 1.0 MHz| | 1487| –
VDs = 480 V, f = 1.0 MHz| | 36| –
Effective output capacitance| Coss eff.| VDs = 0 V to 480 V C| | 48| –
Total gate charge| 9| V 10 V
G5 =| ID = 6.2 A, VDS = 480 V
see fig. 6 and 13 b| | –| 42| nC
Gate-source charge| ags| | –| 10
Gate-drain charge| Ogd| | –| 20
Turn-on delay time| td(on)| VDD = 300 V, ID = 6.2 A
Rg = 9.1 f2, RD = 47 a
see fig 10 b| | 13| –| ns
Rise time| t,| | 23| –
Turn-off delay time| td(ow)| | 31| –
Fall time| t,| | 18| –
Gate input resistance| R9| f = 1 MHz, open drain| 0.6| –| 4.| i2
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| Is| MOSFET symbol showing the integral reverse p – n junction diode| | –| 6.| A
Pulsed diode forward current a| ISM| | –| 25
Body diode voltage| VS0| Ii= 25 °C, Is = 6.2 A, VGs=0Vb| | –| 2.| V
Body diode reverse recovery time| trr| Tj = 25 °C, IF = 6.2 A, dl/dt = 100 A/ps b| | 431| 647| ns
Body diode reverse recovery charge| Qrr| | 2.| 3.| pC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by Ls and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRFBC40A
Vishay Siliconix

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91112.

Package Information

Vishay Siliconix TO-220-1

ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031

Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

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Revision: 01-Jan-2022
Document Number: 91000
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References

• applications.no
• IRFBC40A Power MOSFET | Vishay

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