onsemi NTMFS5C646NL MOSFET Power Single N-Channel Owner’s Manual
- June 16, 2024
- onsemi
Table of Contents
onsemi NTMFS5C646NL MOSFET Power Single N-Channel Owner’s Manual
Features
- Small Footprint (5×6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 60 | V |
| Gate−to−Source Voltage | VGS | ±20 | V |
| Continuous Drain Current RθJC (Notes 1, 3) | **** Steady State | TC = 25°C | |
| ID | 93 | A | |
| TC = 100°C | 65 | ||
| Power Dissipation RθJC (Note 1) | TC = 25°C | PD | 79 |
| TC = 100°C | 40 | ||
| Continuous Drain Current RθJA (Notes 1, 2, 3) | **** Steady State | TA = | |
| 25°C | ID | 20 | A |
| TA = 100°C | 14 | ||
| Power Dissipation RθJA (Notes 1 & 2) | TA = 25°C | PD | 3.7 |
| TA = 100°C | 1.8 | ||
| Pulsed Drain Current | TA = 25°C, tp = 10 µs | IDM | 750 |
| Operating Junction and Storage Temperature | TJ, Tstg | − 55 to+175 | °C |
| Source Current (Body Diode) | IS | 100 | A |
| Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A) | EAS | 185 | mJ |
| Lead Temperature for Soldering Purposes (1/8² from case for 10 s) | TL | 260 | °C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State | RθJC | 1.9 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RθJA | 41 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
| V (BR)DSS | R DS(ON) MAX | I D MAX |
|---|---|---|
| 60 V | 4.7 mΩ @ 10 V | **** 93 A |
6.3 mΩ @ 4.5 V
N−CHANNEL MOSFET
DFN5 (SO−8FL) CASE 488AA STYLE 1
MARKING DIAGRAM
5C646L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package
dimensions section on page 5 of this data sheet.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
| Drain−to−Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 µA | 60 | V | ||
|---|---|---|---|---|---|---|
| Drain−to−Source Breakdown Voltage Temperature Coefficient | V(br)dss/ Tj | |||||
| 15.5 | mV/°C | |||||
| Zero Gate Voltage Drain Current | IDSS | VGS = 0 V, VDS = 60 V | TJ = 25 °C | |||
| 10 | **** µA | |||||
| TJ = 125°C | 250 | |||||
| Gate−to−Source Leakage Current | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA |
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 80 µA | 1.2 | 2.0 | V | |
|---|---|---|---|---|---|---|
| Threshold Temperature Coefficient | VGS(TH)/TJ | −4.9 | mV/°C | |||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V | ID = 50 A | 3.8 | 4.7 | |
| VGS = 4.5 V | ID = 50 A | 5.0 | 6.3 | |||
| Forward Transconductance | gFS | VDS = 15 V, ID = 50 A | 105 | S |
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance| CISS| VGS = 0 V, f = 1 MHz, VDS = 25 V| | 2164| |
pF
---|---|---|---|---|---|---
Output Capacitance| COSS| | 900|
Reverse Transfer Capacitance| CRSS| | 17|
Total Gate Charge| QG(TOT)| VGS = 4.5 V, VDS = 30 V; ID = 25 A| | 15.7| |
**** nC
Total Gate Charge| QG(TOT)| VGS = 10 V, VDS = 30 V; ID = 25 A| | 33.7|
Threshold Gate Charge| QG(TH)| **** VGS = 4.5 V, VDS = 30 V; ID = 25 A| |
1.5|
Gate−to−Source Charge| QGS| | 5.6|
Gate−to−Drain Charge| QGD| | 5.1|
Plateau Voltage| VGP| | 2.8| | V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time| td(ON)| VGS = 4.5 V, VDS = 30 V, ID = 25 A, RG = 2.5 Ω| |
10.4| ns
---|---|---|---|---|---
Rise Time| tr| | 14.9
Turn−Off Delay Time| td(OFF)| | 23.6
Fall Time| tf| | 5.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage| VSD| VGS = 0 V, IS = 50 A| TJ = 25°C| 0.88| 1.2|
V
---|---|---|---|---|---|---
TJ = 125°C| 0.78|
Reverse Recovery Time| tRR| **** VGS = 0 V, dIS/dt = 100 A/µs, IS = 50 A|
40.9| | **** ns
Charge Time| ta| 20.8|
Discharge Time| tb| 20.1|
Reverse Recovery Charge| QRR| 32| | nC
Pulse Test: pulse width 300 s, duty cycle 2%.
Switching characteristics are independent of operating junction temperatures
TYPICAL CHARACTERISTICS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
VGS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source Voltage
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current vs. Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge
RG, GATE RESISTANCE ()
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
VDS (V)
Figure 11. Safe Operating Area
TIME IN AVALANCHE (s)
Figure 12. IPEAK vs. Time in Avalanche
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Thermal Response
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Thermal Response
DEVICE ORDERING INFORMATION
| Device | Marking | Package | Shipping |
|---|---|---|---|
| NTMFS5C646NLT1G | 5C646L | DFN5(Pb−Free) | 1500 / Tape & Reel |
| NTMFS5C646NLT3G | 5C646L | DFN5(Pb−Free) | 5000 / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
TOP VIEW
DETAIL A
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:| 98AON14036D| Electronic versions are uncontrolled
except when accessed directly from the Document Repository. Printed versions
are uncontrolled except when stamped “CONTROLLED COPY” in red.
---|---|---
DESCRIPTION:| DFN5 5×6, 1.27P (SO − 8FL)| PAGE 1 OF 1
onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018 www.onsemi.com
onsemi, , and other names, marks, and brands are registered and/or common
law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its
affiliates and/or subsidiaries in the United States and/or other countries.
onsemi owns the rights to a number of patents, trademarks, copyrights, trade
secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
onsemi reserves the right to make changes at any time to any products or
information herein, without notice. The information herein is provided “as−is”
and onsemi makes no warranty, representation or guarantee regarding the
accuracy of the information, product features, availability, functionality, or
suitability of its products for any particular purpose, nor does onsemi assume
any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. Buyer is responsible for its
products and applications using onsemi products, including compliance with all
laws, regulations and safety requirements or standards, regardless of any
support or applications information provided by onsemi. “Typical” parameters
which may be provided in onsemi data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. onsemi does not convey any
license under any of its intellectual property rights nor the rights of
others. onsemi products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices
or medical devices with a same or similar classification in a foreign
jurisdiction or any devices intended for implantation in the human body.
Should Buyer purchase or use onsemi products for any such unintended or
unauthorized application, Buyer shall indemnify and hold onsemi and its
officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim
alleges that onsemi was negligent regarding the design or manufacture of the
part. onsemi is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale
in any manner
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library:
www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
Read User Manual Online (PDF format)
Read User Manual Online (PDF format) >>