VISHAY IRF540 Power MOSFET Instruction Manual
- June 3, 2024
- VISHAY
Table of Contents
IRF540 Power MOSFET
Instruction Manual
IRF540 Power MOSFET
PRODUCT SUMMARY
| VDS M | 100 |
|---|---|
| RDS(on) (Ω) | Vas = 10 V |
| Qg max. (nC) | 72 |
| Qgs (nC) | 11 |
| Qgd (nC) | 32 |
| Configuration | Single |
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175 °C operating temperature
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and/or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
| Package | TO-220AB |
|---|---|
| Lead (Pb)-free | IRF540PbF |
| Lead (Pb)-free and halogen-free | IRF540PbF-BE3 |
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNIT |
|---|---|---|---|
| Drain-source voltage | VDS | 100 | V |
| Gate-source voltage | Vas | ± 20 | |
| Continuous drain current | Vas at 10 V | Tc = 25 °C | ID |
| Tc = 100 °C | 20 | ||
| Pulsed drain current a | Ipm | 110 | |
| Linear derating factor | 1.0 | W/°C | |
| Single pulse avalanche energy b | EAS | 230 | mJ |
| Repetitive avalanche current a | IAR | 28 | A |
| Repetitive avalanche energy a | EAR | 15 | mJ |
| Maximum power dissipation | Tc = 25 °C | PD | 150 |
| Peak diode recovery dV/dt ° | dV/dt | 6. | V/ns |
| Operating junction and storage temperature range | Tj, Tstg | -55 to +175 | °C |
| Soldering recommendations (peak temperature)d | For 10 s | 300 | |
| Mounting torque | 6-32 or M3 screw | 10 | |
| 1. | N • m |
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, Rg = 25 Ω, IAS = 28 A (see
fig. 12)
c. ISD ≤ 28 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
|---|---|---|---|---|
| Maximum junction-to-ambient | RthJA | 62 | °C/W | |
| Case-to-sink, flat, greased surface | RthCS | 0.50 | – | |
| Maximum junction-to-case (drain) | RthJC | 1.0 |
SPECIFICATIONS
(T = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT |
|---|
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 pA| 100| –| –| V
VDS temperature coefficient| 3VDS/TJ| Reference to 25 °C, ID = 1 mA| | 0.13|
–| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 pA| 2.0| –| 4.0| V
Gate-source leakage| ISSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| loss| VDS = 100 V) VGS = 0 V| | –| 25| VA
VDS = 80 V, VGS = 0 V, T.J = 150 °C| –| –| 250
Drain-source on-state resistance| RD5(on)| VGS = 10 V| I ID = 17 A b| | –|
0.077| S2
Forward transconductance| grs| VDS = 50 V, ID = 17 A b| 9.| | | S
Dynamic
Input capacitance| Coss| Vas = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5| | 1700| | pF
Output capacitance| Coss| | 560|
Reverse transfer capacitance| Qg| | 120|
Total gate charge| Qgs| VGS = 10 V| VDG = 1380 V, ID an
see fig. 6 d b| | | 72| nC
Gate-source charge| Qgs| | | 11
Gate-drain charge| Qgs| | | 32
Turn-on delay time| td(on)| VDD = 50 V, ID = 17 A
R9 = 9.1 fl, RD = 2.9 52, see fig. 10 b| | 11| | ns
Rise time| tr| | 44| –
Turn-off delay time| td(oft)| | 53| –
Fall time| tf| | 43| –
Gate input resistance| Fig| f = 1 MHz, open drain| 0.5| –| 4.| Si
Internal drain inductance| I-0| Between lead, 6 mm (0.25″) from package and
center of die contact| | 5.| –| nH
Internal source inductance| Ls| | 8.| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| Is| MOSFET symbol showing the integral
reverse p – n junction diode| | –| 28| A
Pulsed diode forward current a| Ism| | –| 110
Body diode voltage| Vso| Tj = 25 °C, Is = 28 A, VGs=0Vb| | –| 3.| V
Body diode reverse recovery time| trr| T j = 25 °C, IF = 17 A, dl/dt = 100
Ails b| –| 180| 360| ns
Body diode reverse recovery charge| Qrr| –| 1.| 3.| pC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by Ls and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91021.
Package Information
Vishay Siliconix TO-220-1
| DIM. | MILLIMETERS | INCHES |
|---|---|---|
| MIN. | MAX. | MIN. |
| A | 4. | 5. |
| b | 0.69 | 1. |
| b(1) | 1. | 2. |
| c | 0.36 | 0.61 |
| D | 14. | 16. |
| E | 10. | 11. |
| e | 2. | 3. |
| e(1) | 5. | 5. |
| F | 1. | 1.40 |
| 1-1(1) | 6.10 | 7. |
| J(1) | 2. | 3. |
| L | 13. | 14.40 |
| L(1) | 3. | 4. |
| 0 P | 4. | 4. |
| 0 | 3. | 3.00 |
ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink
hole for HVM
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Revision: 01-Jan-2022
Document Number: 91000
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References
- applications.no
- Vishay Intertechnology: Passives & Discrete Semiconductors
- IRF540 MOSFETs | Vishay
- IRF540 Power MOSFET | Vishay
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