VISHAY SiHFPS43N50K Power Mosfet Instruction Manual

VISHAY SiHFPS43N50K Power Mosfet

FEATURES

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Low RDS(on)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
• Hard switched and high frequency circuits

PRODUCT SUMMARY

VDS (V)| 500
RDS(on) (W)| VGS = 10 V| 0.078
Qg (Max.) (nC)| 350
Qgs (nC)| 85
Qgd (nC)| 180
Configuration| Single
ORDERING INFORMATION

Package| Super-247
Lead (Pb)-free and halogen-free| SiHFPS43N50K-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 30
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 47|

A

TC = 100 °C| 29
Pulsed drain current a| IDM| 190
Linear derating factor|  | 4.3| W/°C
Single pulse avalanche energy b| EAS| 910| mJ
Repetitive avalanche current a| IAR| 47| A
Repetitive avalanche energy a| EAR| 54| mJ
Maximum power dissipation| TC = 25 °C| PD| 540| W
Peak diode recovery dV/dt c| dV/dt| 9.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| – 55 to + 150| °C
Soldering recommendations (peak temperature)| for 10 s|  | 300 d

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Starting TJ = 25 °C, L = 0.82 mH, Rg = 25 Ω, IAS = 47 A (see fig. 12c)
• c. ISD ≤ 47 A, dI/dt ≤ 230 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.23

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.60| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 3.0| –| 5.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA

Zero gate voltage drain current

| IDSS| VDS = 500 V, VGS = 0 V| –| –| 50|

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 28 A b| –| 0.078| 0.090| W
Forward transconductance| gfs| VDS = 50 V, ID = 28 A| 23| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 8310| –|

pF

Output capacitance| Coss| –| 960| –
Reverse transfer capacitance| Crss| –| 120| –
Output capacitance| Coss| VGS = 0 V| VDS = 1.0 V, f = 1.0 MHz| –| 10170| –
VDS = 400 V, f = 1.0 MHz| –| 240| –
Effective output capacitance| Coss eff.| VDS = 0 V to 400 Vc| –| 440| –
Total gate charge| Qg| VGS = 10 V| D = 47 A, VDS = 400 V,

see fig. 6 and 13 b

| –| –| 350|

nC

Gate-source charge| Qgs| –| –| 85
Gate-drain charge| Qgd| –| –| 180
Turn-on delay time| td(on)| VDD = 250 V, ID = 47 A,

RG = 1.0 W, see fig. 10 b

| –| 25| –|

ns

Rise time| tr| –| 140| –
Turn-off delay time| td(off)| –| 55| –
Fall time| tf| –| 74| –
Drain-source body diode characteristics
Continuous source-drain diode current| IS| MOSFET symbol D

showing the

integral reverse                G

p – n junction diode                                                 S

| –| –| 47|

A

Pulsed diode forward current a| ISM| –| –| 190
Body diode voltage| VSD| TJ = 25 °C, IS = 47 A, VGS = 0 V b| –| –| 1.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 47 A, dI/dt = 100 A/μs b| –| 620| 940| ns
Body diode reverse recovery charge| Qrr| –| 14| 21| μC
Body diode recovery current| IRRM| –| 38| –| A
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Pulse width ≤ 400 μs; duty cycle ≤ 2 %
• c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS

TYPICAL CHARACTERISTICS

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91262

Package Information

VERSION 1: FACILITY CODE = Y

VERSION 2: FACILITY CODE = N

ECN: E20-0538-Rev. C, 19-Oct-2020 DWG: 5975

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Outline conforms to JEDEC® outline to TO-274AD
• Dimensions are measured in mm, angles are in degree
• Metal surfaces are tin plated, except area of cut

Disclaimer

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References

• applications.no
• SiHFPS43N50K Power MOSFET | Vishay

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