VISHAY Si2308CDS N-Channel 60 V D-S MOSFET Owner’s Manual

VISHAY Si2308CDS N-Channel 60 V D-S MOSFET

FEATURES

• TrenchFET® Gen IV power MOSFET
• 100 % Rg tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Battery switch
• DC/DC converter
• Load switch

Marking code: G3

PRODUCT SUMMARY

VDS (V)| 60
RDS(on) max. (W) at VGS = 10 V| 0.144
RDS(on) max. (W) at VGS = 4.5 V| 0.200
Qg typ. (C)| 1.05
ID (A) d| 2.6
Configuration| Single
ORDERING INFORMATION

Package| SOT-23
Lead (Pb)-free and halogen-free| Si2308CDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 20

Continuous drain current (TJ = 150 °C)

| TC = 25 °C|

ID

| 2.6|

A

TC = 70 °C| 2.1
TA = 25 °C| 1.9 a, b
TA = 70 °C| 1.5 a, b
Pulsed drain current (t = 100 μs)| IDM| 6
Continuous source-drain diode current| TC = 25 °C| IS| 1.3
TA = 25 °C| 0.72 a, b
Single pulse avalanche current| L = 0.1 mH| IAS| 4
Single pulse avalanche energy| EAS| 0.8| MJ

Maximum power dissipation

| TC = 25 °C|

PD

| 1.6|

W

TC = 70 °C| 1
TA = 25 °C| 0.9 a, b
TA = 70 °C| 0.6 a, b
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYPICAL| MAXIMUM| UNIT
Maximum junction-to-ambient a, c| t £ 10 s| RthJA| 120| 145| °C/W
Maximum junction-to-foot (drain)| Steady-state| RthJF| 62| 78

Notes

• Surface mounted on 1″ x 1″ FR4 board
• t = 10 s
• Maximum under steady-state conditions is 175 °C/W
• TC = 25 °C

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = 250 μA| –| 40| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| –| -4.5| –
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1| –| 3| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 60 V, VGS = 0 V| –| –| 1| μA
VDS = 60 V, VGS = 0 V, TJ = 70 °C| –| –| 10
On-state drain current a| ID(on)| VDS £ 10 V, VGS = 10 V| 6| –| –| A
Drain-source on-state resistance a| RDS(on)| VGS = 10 V, ID = 1.9 A| –| 0.120| 0.144| W
VGS = 4.5 V, ID = 1.5 A| –| 0.160| 0.200
Forward transconductance a| gs| VDS = 30 V, ID = 1.9 A| –| 3.2| –| S
Dynamic b
Input capacitance| Ciss|

VDS = 30 V, VGS = 0 V, f = 1 MHz

| –| 105| –|

pF

Output capacitance| Coss| –| 55| –
Reverse transfer capacitance| Cross| –| 7| –
Total gate charge| Qg| VDS = 30 V, VGS = 10 V, ID = 1.9 A| –| 2| 4|

C

VDS = 30 V, VGS = 4.5 V, ID = 1.9 A

| –| 1.05| 2.1
Gate-source charge| Qgs| –| 0.62| –
Gate-drain charge| Qgd| –| 0.17| –
Gate resistance| Rg| f = 1 MHz| 0.3| 1.5| 3| W
Turn-on delay time| td(on)|

VDD = 30 V, RL = 20 W, ID @ 1.5 A, VGEN = 10 V, Rg = 1 W

| –| 8| 16|

ns

Rise time| tr| –| 5| 10
Turn-off delay time| td(off)| –| 11| 20
Fall time| tf| –| 3| 6
Turn-on delay time| td(on)|

VDD = 30 V, RL = 20 W, ID @ 1.5 A, VGEN = 4.5 V, Rg = 1 W

| –| 23| 35
Rise time| tr| –| 25| 40
Turn-off delay time| td(off)| –| 10| 20
Fall time| tf| –| 16| 30
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| 1.7| A
Pulse diode forward current| ISM|  | –| –| 4
Body diode voltage| VSD| IS = 1.5 A, VGS = 0 V| –| 0.85| 1.2| V
Body diode reverse recovery time| try|

IF = 1.5 A, di/dt = 100 A/μs, TJ = 25 °C

| –| 15| 30| ns
Body diode reverse recovery charge| Qrr| –| 53| 80| C
Reverse recovery fall time| ta| –| 27| –| ns
Reverse recovery rise time| TB| –| 17| –

Notes

• Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
• Guaranteed by design, not subject to production testing
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
• These are stress ratings only, and the functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.
• Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Note

• The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used.
• It is used to determine the current rating when this rating falls below the package limit.

SOT-23 (TO-236): 3-LEAD

Recommended Minimum PADs for PowerPAK® 8 x 8L Single

Note
Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue.

ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

Disclaimer

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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