VISHAY Si2308BDS N-Channel 60 V D-S MOSFET Owner’s Manual

**VISHAY Si2308BDS N-Channel 60 V D-S MOSFET Owner’s Manual

**

FEATURES

• Halogen-free according to IEC 61249-2-21 available
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Battery Switch
• DC/DC Converter

N-Channel MOSFET

Marking Code: Si2308BDS (L8)

PRODUCT SUMMARY

ORDERING INFORMATION

SI2308BDS-T1-BE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

THERMAL RESISTANCE RATINGS

Notes
a. TC = 25 °C
b. Surface mounted on 1″ x 1″ FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VDS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = 250 μA| –| 55| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| –| -5| –
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1| –| 3| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current|

IDSS

| VDS = 60 V, VGS = 0 V| –| –| 1| μA
VDS = 60 V, VGS = 0 V, TJ = 55 °C| –| –| 10
On-state drain current a| ID(on)| VDS ≥ -5 V, VGS = 10 V| 8| –| –| A
Drain-source on-state resistance a|

RDS(on)

| VGS = 10 V, ID = 1.9 A| –| 0.130| 0.156| W
VGS = 4.5 V, ID = 1.7 A| –| 0.160| 0.192
Forward Transconductance a| gfs| VDS = 15 V, ID = 1.9 A| –| 5| –| S
Dynamic b
Input capacitance| Ciss| VDS = 30 V, VGS = 0 V, f = 1 MHz| –| 190| –| pF
Output capacitance| Coss| –| 26| –
Reverse transfer capacitance| Crss| –| 15| –
Total gate charge|

Qg

| VDS = 30 V, VGS = 10 V, ID = 1.9 A| –| 4.5| 6.8| nC
VDS = 30 V, VGS = 4.5 V, ID = 1.9 A| –| 2.3| 3.5
Gate-source charge| Qgs| –| 0.8| –
Gate-drain charge| Qgd| –| 1| –
Gate resistance| Rg| f = 1 MHz| 0.6| 2.8| 5.6| W
Turn-on delay time| td(on)| VDD = 30 V, RL = 20 W

ID @ 1.5 A, VGEN = 10 V, Rg = 1 W

| –| 4| 6| ns
Rise time| tr| –| 10| 15
Turn-off delay time| td(off)| –| 10| 15
Fall time| tf| –| 7| 10.5
Turn-on delay time| td(on)| VDD = 30 V, RL = 20 W

ID = 1.5 A, VGEN = 4.5 V, Rg = 1 W

| –| 15| 23
Rise time| tr| –| 16| 24
Turn-off delay time| td(off)| –| 11| 17
Fall time| tf| –| 11| 17
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| 1.39| A
Pulse diode forward current a| ISM| | –| –| 8
Body diode voltage| VSD| IS = 1.5 A| –| 0.8| 1.2| V
Body diode reverse recovery time| trr| IF = 1.5 A, dI/dt = 100 A/μs, TJ = 25 °C| –| 15| 23| ns
Body diode reverse recovery charge| Qrr| –| 10| 15| nC
Reverse recovery fall time| ta| –| 12| –| ns
Reverse recovery rise time| tb| –| 3| –

Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area

Current Derating a

Power Junction-to-Case

Power Junction-to-Ambien

Power Junction-to-Ambien

Normalized Thermal Transient Impedance, Junction-to-Foot

Package Information

SOT-23 (TO-236): 3-LEAD

ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

Application Note 826

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692)

Legal Disclaimer Notice

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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