VISHAY Si2308BDS N-Channel 60 V D-S MOSFET Owner’s Manual
- August 27, 2024
- VISHAY
Table of Contents
**VISHAY Si2308BDS N-Channel 60 V D-S MOSFET Owner’s Manual
**
FEATURES
- Halogen-free according to IEC 61249-2-21 available
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Battery Switch
- DC/DC Converter
N-Channel MOSFET
Marking Code: Si2308BDS (L8)
PRODUCT SUMMARY
VDS (V) | 60 |
---|---|
RDS(on) max. (W) at VGS = 10 V | 0.156 |
RDS(on) max. (W) at VGS = 4.5 V | 0.192 |
Qg typ. (nC) | 2.3 |
ID (A) a | 2.1 |
Configuration | Single |
ORDERING INFORMATION
Package | TSOP-6 Single |
---|---|
Lead (Pb)-free | SI2308BDS-T1-E3 |
Lead (Pb)-free and halogen-free | SI2308BDS-T1-GE3 |
SI2308BDS-T1-BE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER | SYMBOL | LIMIT | UNIT |
---|---|---|---|
Drain-source voltage | VDS | 60 | V |
Gate-source voltage | VGS | ±20 | |
Continuous drain current (TJ = 150 °C) | TC = 25 °C | ID | 2.3 |
TC = 70 °C | 1.8 | ||
TA = 25 °C | 1.9 b,c | ||
TA = 70 °C | 1.5 b,c | ||
Pulsed drain current | IDM | 8 | |
Continuous source-drain diode current | TC = 25 °C | IS | 1.39 |
TA = 25 °C | 0.91 b,c | ||
Avalanche current | L = 0.1 mH | IAS | 6 |
Single pulse avalanche energy | EAS | 1.8 | |
Maximum power dissipation | TC = 25 °C | PD | 1.66 |
TC = 70 °C | 1.06 | ||
TA = 25 °C | 1.09 b,c | ||
TA = 70 °C | 0.7 b,c | ||
Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C |
THERMAL RESISTANCE RATINGS
PARAMETER | SYMBOL | TYPICAL | MAXIMUM | UNIT |
---|---|---|---|---|
Maximum Junction-to-Ambient b, d | t £ 5 s | RthJA | 90 | 115 |
Maximum Junction-to-Foot (Drain) | Steady State | RthJF | 60 | 75 |
Notes
a. TC = 25 °C
b. Surface mounted on 1″ x 1″ FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VDS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = 250 μA| –| 55| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| –| -5| –
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1| –| 3| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current|
IDSS
| VDS = 60 V, VGS = 0 V| –| –| 1| μA
VDS = 60 V, VGS = 0 V, TJ = 55 °C| –| –| 10
On-state drain current a| ID(on)| VDS ≥ -5 V, VGS = 10 V| 8| –| –| A
Drain-source on-state resistance a|
RDS(on)
| VGS = 10 V, ID = 1.9 A| –| 0.130| 0.156| W
VGS = 4.5 V, ID = 1.7 A| –| 0.160| 0.192
Forward Transconductance a| gfs| VDS = 15 V, ID = 1.9 A| –| 5| –| S
Dynamic b
Input capacitance| Ciss| VDS = 30 V, VGS = 0 V, f = 1 MHz| –| 190| –| pF
Output capacitance| Coss| –| 26| –
Reverse transfer capacitance| Crss| –| 15| –
Total gate charge|
Qg
| VDS = 30 V, VGS = 10 V, ID = 1.9 A| –| 4.5| 6.8| nC
VDS = 30 V, VGS = 4.5 V, ID = 1.9 A| –| 2.3| 3.5
Gate-source charge| Qgs| –| 0.8| –
Gate-drain charge| Qgd| –| 1| –
Gate resistance| Rg| f = 1 MHz| 0.6| 2.8| 5.6| W
Turn-on delay time| td(on)| VDD = 30 V, RL = 20 W
ID @ 1.5 A, VGEN = 10 V, Rg = 1 W
| –| 4| 6| ns
Rise time| tr| –| 10| 15
Turn-off delay time| td(off)| –| 10| 15
Fall time| tf| –| 7| 10.5
Turn-on delay time| td(on)| VDD = 30 V, RL = 20 W
ID = 1.5 A, VGEN = 4.5 V, Rg = 1 W
| –| 15| 23
Rise time| tr| –| 16| 24
Turn-off delay time| td(off)| –| 11| 17
Fall time| tf| –| 11| 17
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| 1.39| A
Pulse diode forward current a| ISM| | –| –| 8
Body diode voltage| VSD| IS = 1.5 A| –| 0.8| 1.2| V
Body diode reverse recovery time| trr| IF = 1.5 A, dI/dt = 100 A/μs, TJ = 25
°C| –| 15| 23| ns
Body diode reverse recovery charge| Qrr| –| 10| 15| nC
Reverse recovery fall time| ta| –| 12| –| ns
Reverse recovery rise time| tb| –| 3| –
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area
Current Derating a
Power Junction-to-Case
Power Junction-to-Ambien
Power Junction-to-Ambien
Normalized Thermal Transient Impedance, Junction-to-Foot
Package Information
SOT-23 (TO-236): 3-LEAD
Dim | MILLIMETERS | INCHES |
---|---|---|
Min | Max | Min |
A | 0.89 | 1.12 |
A 1 | 0.01 | 0.10 |
A 2 | 0.88 | 1.02 |
b | 0.35 | 0.50 |
c | 0.085 | 0.18 |
D | 2.80 | 3.04 |
E | 2.10 | 2.64 |
E 1 | 1.20 | 1.40 |
e | 0.95 BSC | 0.0374 Ref |
e 1 | 1.90 BSC | 0.0748 Ref |
L | 0.40 | 0.60 |
L 1 | 0.64 Ref | 0.025 Ref |
S | 0.50 Ref | 0.020 Ref |
q | 3° | 8° |
ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479
Application Note 826
RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692)
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References
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