VISHAY IRLR120 Series Siliconix Mouser India Owner’s Manual

: August 23, 2024
: VISHAY

Table of Contents

IRLR120 Series Siliconix Mouser India
Specifications:
Product Description:
Ordering Information:
Thermal Resistance Ratings:
Parameter Details:
Product Usage Instructions:
Frequently Asked Questions (FAQ):
References
Read User Manual Online (PDF format)
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IRLR120 Series Siliconix Mouser India

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Specifications:

Brand: Vishay Siliconix
Product Name: IRLR120, IRLU120, SiHLR120, SiHLU120
Type: Power MOSFET
Package: DPAK (TO-252), IPAK (TO-251)
Channel Type: N-Channel MOSFET
Drain-Source Voltage (VDS): 100V
RDS(on): 0.27 Ohms (at VGS = 5.0V)
Maximum Gate Charge (Qg): 12nC
Gate-Source Charge (Qgs): 3.0nC
Gate-Drain Charge (Qgd): 7.1nC

Product Description:

Third generation power MOSFETs from Vishay provide fast
switching, ruggedized design, low on-resistance, and
cost-effectiveness. The DPAK is suitable for surface mounting using
various soldering techniques, while the straight lead version is
for through-hole mounting.

Ordering Information:

Lead (Pb)-free and halogen-free options are available for DPAK
package. Different part numbers are provided based on the specific
requirements.

Thermal Resistance Ratings:

Maximum Junction-to-Ambient: 110°C/W
Maximum Junction-to-Case: 50°C/W

Parameter Details:

Static:
- Drain-Source Breakdown Voltage: 100V
- Gate-Source Threshold Voltage: 2.0V
- Zero Gate Voltage Drain Current: 250A
- Drain-Source On-State Resistance: 0.27 Ohms
- Forward Transconductance: 4.4S
Dynamic:
- Total Gate Charge: 12nC
- Turn-On Delay Time: 0.13V
- Rise Time: 1.0V
- Turn-Off Delay Time: 0.38V
- Fall Time: 2.0V

Product Usage Instructions:

Soldering:

The DPAK package can be soldered using vapor phase, infrared, or
wave soldering techniques. Ensure proper device orientation during
soldering.

Mounting:

The DPAK package is designed for surface mounting applications
with power dissipation levels up to 1.5W. The straight lead version
is suitable for through-hole mounting.

Handling:

Avoid static electricity discharge when handling the MOSFET to
prevent damage. Follow proper ESD precautions.

Circuit Design:

Refer to the datasheet for circuit design guidelines and ensure
the MOSFET is operated within specified parameters to ensure
reliability.

Frequently Asked Questions (FAQ):

Can the MOSFET handle a higher voltage than 100V?

No, the maximum Drain-Source Voltage (VDS) rating is 100V.
Exceeding this voltage may damage the MOSFET.

What is the recommended soldering temperature?

The recommended peak soldering temperature is 260°C for up to 10
seconds. Ensure proper soldering techniques to prevent thermal
damage.

Can the MOSFET be used in high-power applications?

Yes, the MOSFET can handle power dissipation levels up to 1.5W
in typical surface-mount applications.

How should I store unused MOSFETs?

Unused MOSFETs should be stored in anti-static packaging and in
a dry environment to prevent damage from moisture and static
discharge.

Note: For technical inquiries, contact hvm@vishay.com.

This document is subject to change without notice. Specific
disclaimers are available at www.vishay.com/doc?91000.

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IRLR120, IRLU120, SiHLR120, SiHLU120
Vishay Siliconix

Power MOSFET

DPAK (TO-252)
D

IPAK (TO-251)
D

D G

GS

GD S

S N-Channel MOSFET

PRODUCT SUMMARY

VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration

100

VGS = 5.0 V

0.27

12

3.0

7.1

Single

FEATURES

· Dynamic dV/dt rating

· Repetitive avalanche rated

· Surface-mount (IRLR120, SiHLR120)

· Straight lead (IRLU120, SiHLU120)

· Available in tape and reMel · Logic-level gate drive

Available

· RDS(on) specified at VGS = 4 V and 5 V

· Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.

ORDERING INFORMATION

Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free

DPAK (TO-252) SiHLR120-GE3 IRLR120PbF-BE3 IRLR120PbF

Note a. See device orientation

DPAK (TO-252) SiHLR120TRL-GE3 IRLR120TRLPbF-BE3 IRLR120TRLPbF a

DPAK (TO-252) SiHLR120TR-GE3 IRLR120TRPbF-BE3 IRLR120TRPbF a

DPAK (TO-252) SiHLR120TRR-GE3 IRLR120TRRPbF a

IPAK (TO-251) SiHLU120-GE3 –

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage

VDS

Gate-source voltage

VGS

Continuous drain current Pulsed drain current a

VGS at 5 V

TC = 25 °C TC = 100 °C

ID

IDM

Linear derating factor

Linear derating factor (PCB mount) e

Single pulse avalanche energy b

EAS

Repetitive avalanche current a

IAR

Repetitive avalanche energy a

EAR

Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dV/dt c

TC = 25 °C TA = 25 °C

PD dV/dt

Operating junction and storage temperature range Soldering recommendations (peak temperature) d

For 10 s

TJ, Tstg

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 , IAS = 7.7 A (see fig. 12) c. ISD 9.2 A, dI/dt 110 A/s, VDD VDS, TJ 150 °C d. 1.6 mm from case e. When mounted on 1″ square PCB (FR-4 or G-10 material)

LIMIT 100 ± 10 7.7 4.9 31 0.33 0.020 210 7.7 4.2 42 2.5 5.5
-55 to +150 260

UNIT V
A
W/°C mJ A mJ W V/ns °C

S21-0818-Rev. F, 02-Aug-2021

1

Document Number: 91324

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THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

Maximum junction-to-ambient
Maximum junction-to-ambient (PCB mount) a

RthJA RthJA

Maximum junction-to-case (drain)

RthJC

Note a. When mounted on 1″ square PCB (FR-4 or G-10 material)

MIN. –

TYP. –

MAX. 110 50 3.0

UNIT °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance Dynamic

VDS VDS/TJ VGS(th)
IGSS IDSS
RDS(on) gfs

VGS = 0 V, ID = 250 A

Reference to 25 °C, ID = 1 mA

VDS = VGS, ID = 250 A

VGS = ± 10 V

VDS = 100 V, VGS = 0 V

VDS = 80 V, VGS = 0 V, TJ = 125 °C

VGS = 5.0 V

ID = 4.6 Ab

VGS = 4.0 V

ID = 3.9 Ab

VDS = 50 V, ID = 4.6 Ab

100

–

V

–

0.13

–

V/°C

1.0

–

2.0

V

–

± 100 nA

–

25

A

–

250

–

0.27

–

0.38

4.4

–

S

Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn- off delay time Fall time
Internal drain inductance

Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
LD

Internal source inductance

LS

Gate input resistance

Rg

Drain-Source Body Diode Characteristics

VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5

–

490

–

150

–

pF

–

30

–

VGS = 5.0 V

ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b

–

12

–

3.0

nC

–

7.1

–

9.8

–

VDD = 50 V, ID = 9.2 A, Rg = 9.0 , RD = 5.2 , see fig. 10b

–

64

–

ns

–

21

–

27

–

Between lead,
6 mm (0.25″) from
package and center of die contactc

D G

S

f = 1 Mhz, open drain

–

4.5

–

nH

–

7.5

–

0.6

1.3

2.6

Continuous source-drain diode current Pulsed diode forward current a

IS

MOSFET symbol showing the

integral reverse

ISM

p – n junction diode

D
G S

–

7.7

A

–

31

Body diode voltage

VSD

TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb

–

2.5

V

Body diode reverse recovery time Body diode reverse recovery charge

trr Qrr

–

110

140

ns

TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/sb

–

0.80 1.0

C

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s; duty cycle 2 %

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Document Number: 91324

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 2 – Typical Output Characteristics, TC = 150 °C

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 3 – Typical Transfer Characteristics

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

S21-0818-Rev. F, 02-Aug-2021

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VDS VGS Rg

RD D.U.T.

5.0 V
Pulse width 1 µs Duty factor 0.1 %

+- VDD

Fig. 10a – Switching Time Test Circuit

Fig. 7 – Typical Source-Drain Diode Forward Voltage

VDS 90 %

10 % VGS

td(on) tr

td(off) tf

Fig. 10b – Switching Time Waveforms

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature

S21-0818-Rev. F, 02-Aug-2021

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS Vary tp to obtain required IAS
Rg
5.0 V tp

L
D.U.T IAS
0.01

+ – V DD

Fig. 12a – Unclamped Inductive Test Circuit

VDS

VDS
tp VDD

IAS Fig. 12b – Unclamped Inductive Waveforms

Fig. 12c – Maximum Avalanche Energy vs. Drain Current

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VGS

QGS

VG

QG QGD

Charge

Fig. 13a – Basic Gate Charge Waveform

Current regulator Same type as D.U.T.

12 V

50 k

0.2 µF

0.3 µF

+ D.U.T. – VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b – Gate Charge Test Circuit

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IRLR120, IRLU120, SiHLR120, SiHLU120
Vishay Siliconix

D.U.T.
+ –

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

· Low stray inductance

· Ground plane

· Low leakage inductance

current transformer

–

Rg

· dV/dt controlled by Rg

· Driver same type as D.U.T. · ISD controlled by duty factor “D”

– VDD

· D.U.T. – device under test

Driver gate drive

P.W.

Period

D =

P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse

recovery current

Body diode forward current dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt VDD

Re-applied voltage

Body diode forward drop Inductor current

Ripple 5 %

ISD

Note a. VGS = 5 V for logic level devices
Fig. 14 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91324.

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Package Information
Vishay Siliconix

TO-252AA Case Outline

VERSION 1: FACILITY CODE = Y
E b3

A C2

L3 D

D1

L H

gage plane height (0.5 mm)

b

b2

e

e1

L4

L5

E1
C A1

MILLIMETERS

DIM. A A1 b b2 b3 C C2 D D1 E E1 H e e1 L L3 L4 L5

MIN. 2.18
0.64 0.76 4.95 0.46 0.46 5.97 4.10 6.35 4.32 9.40
1.40 0.89
1.01

2.28 BSC 4.56 BSC

MAX. 2.38 0.127 0.88 1.14 5.46 0.61 0.89 6.22
6.73
10.41
1.78 1.27 1.02 1.52

Note · Dimension L3 is for reference only

Revision: 03-Oct-2022

1

Document Number: 71197

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www.vishay.com VERSION 2: FACILITY CODE = N
E b3

e e

A c2

Package Information
Vishay Siliconix
E1 E1/2

D1

D L3

H
A1

L6

L4 L5

DIM. A A1 b b1 b2 b3 c c1 c2 D D1 E E1 e H

2x b2 2x e
(3°)

3x b 0.25
(3°)
GAUGE PLANE

L2

CAB
C C
L (L1)

DETAIL “B”

(b)

c

c1

H b1

SEATING C PLANE

DETAIL “B”

MILLIMETERS

MIN. 2.18
0.65 0.64 0.76 4.95 0.46 0.41 0.46 5.97 5.21 6.35 4.32
9.94

2.29 BSC

MAX. 2.39 0.13 0.89 0.79 1.13 5.46 0.61 0.56 0.60 6.22
6.73
–
10.34

MILLIMETERS

DIM.

MIN.

MAX.

L

1.50

1.78

L1

2.74 ref.

L2

0.51 BSC

L3

0.89

1.27

L4

–

1.02

L5

1.14

1.49

L6

0.65

0.85

0°

10°

1

0°

15°

2

25°

35°

Notes

· Dimensioning and tolerance confirm to ASME Y14.5M-1994 · All dimensions are in millimeters. Angles are in degrees · Heat sink side flash is max. 0.8 mm · Radius on terminal is optional

ECN: E22-0399-Rev. R, 03-Oct-2022 DWG: 5347

Revision: 03-Oct-2022

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Package Information
Vishay Siliconix

Case Outline for TO-251AA (High Voltage)

OPTION 1:

4

E1

Thermal PAD

D1 4

(Datum A)

View A – A

3 E4 b4
2

5 L1 L3

CC

D

A 0.010 0.25 M C A B L2 4
B 3

A c2 A
1
C
Seating plane

L BB

2 x e

3 x b2
3 x b 0.010 0.25 M C A B

Lead tip

Plating (c)

5 b1, b3

c
Base metal
c1 5

A A1

(b, b2) Section B – B and C – C

MILLIMETERS

DIM.

MIN.

MAX.

A

2.18

2.39

A1

0.89

1.14

b

0.64

0.89

b1

0.65

0.79

b2

0.76

1.14

b3

0.76

1.04

b4

4.95

5.46

c

0.46

0.61

c1

0.41

0.56

c2

0.46

0.86

D

5.97

6.22

ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

INCHES

MIN.

MAX.

0.086

0.094

0.035

0.045

0.025

0.035

0.026

0.031

0.030

0.045

0.030

0.041

0.195

0.215

0.018

0.024

0.016

0.022

0.018

0.034

0.235

0.245

DIM. D1 E E1 e L L1 L2 L3 1 2

MILLIMETERS

MIN.

MAX.

5.21

–

6.35

6.73

4.32

–

2.29 BSC

8.89

9.65

1.91

2.29

0.89

1.27

1.14

1.52

0′

15′

25′

35′

INCHES

MIN.

MAX.

0.205

–

0.250

0.265

0.170

–

2.29 BSC

0.350

0.380

0.075

0.090

0.035

0.050

0.045

0.060

0′

15′

25′

35′

Notes
· Dimensioning and tolerancing per ASME Y14.5M-1994 · Dimension are shown in inches and millimeters · Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at
the outermost extremes of the plastic body · Thermal pad contour optional with dimensions b4, L2, E1 and D1 · Lead dimension uncontrolled in L3 · Dimension b1, b3 and c1 apply to base metal only · Outline conforms to JEDEC® outline TO-251AA

Revision: 27-Dec-2021

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Document Number: 91362

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OPTION 2: FACILITY CODE = N

E

b4

A

CL

c2

L2

1

Ø 1.00 x 0.10 deep

D

1

L4

L1

L3

C

B

D1

Package Information
Vishay Siliconix
E1

D2

L

c c1

b2 b e
2

A1 c

b1, b3

Third angle projection

b, b2 Section “B-B” and “C-C”

DIM.

MIN.

NOM.

MAX.

A

2.180

2.285

2.390

A1

0.890

1.015

1.140

b

0.640

0.765

0.890

b1

0.640

0.715

0.790

b2

0.760

0.950

1.140

b3

0.760

0.900

1.040

b4

4.950

5.205

5.460

c

0.460

–

0.610

c1

0.410

–

0.560

c2

0.460

–

0.610

D

5.970

6.095

6.220

D1

4.300

–

ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes · Dimensioning and tolerancing per ASME Y14.5M-1994 · All dimension are in millimeters, angles are in degrees · Heat sink side flash is max. 0.8 mm

DIM. D2 E E1 e L L1 L2 L3 L4 1 2

MIN.

NOM.

5.380

–

6.350

6.540

4.32

–

2.29 BSC

8.890

9.270

1.910

2.100

0.890

1.080

1.140

1.330

1.300

1.400

0°

7.5°

4°

–

MAX. –
6.730 –
9.650 2.290 1.270 1.520 1.500 15°
–

Revision: 27-Dec-2021

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Document Number: 91362

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RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224 (5.690)

Application Note 826
Vishay Siliconix

0.243 (6.180)

0.420 (10.668)

0.087 (2.202)

0.090 (2.286)

APPLICATION NOTE

Return to Index Return to Index

0.180 (4.572)

0.055 (1.397)

Recommended Minimum Pads Dimensions in Inches/(mm)

Document Number: 72594 Revision: 21-Jan-08
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Disclaimer

Legal Disclaimer Notice
Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 01-Jan-2024

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Document Number: 91000

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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