VISHAY VS-E7MH0112-M3 Hyperfast Recovery Rectifiers Owner’s Manual
- August 16, 2024
- VISHAY
Table of Contents
VISHAY VS-E7MH0112-M3 Hyperfast Recovery Rectifiers
FEATURES
- Hyper fast recovery time, reduced Qrr, and soft recovery
HALOGEN
FREE
- 175 °C maximum operating junction temperature
- Specified for output and snubber operation
- Low forward voltage drop
- Low leakage current
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Meets JESD 201 class 2 whisker test
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and hyper fast recovery time.
The planar structure and the platinum doped life time control guarantee the
best overall performance, ruggedness, and reliability characteristics.
These devices are intended for use as clamp, snubber and freewheeling diode in
a fly back aux power supplies, bootstrap and desaturate for HV MOSFET and IGBT
driver, high frequency rectifiers in a cuk and sepic circuit for LED lighting.
Their extremely optimized stored charge and low recovery current minimize the
switching losses and reduce power dissipation in the switching element.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin
plated leads, solder able per J-STD-002
Polarity: color band denotes cathode end
LINKS TO ADDITIONAL RESOURCES
PRIMARY CHARACTERISTICS
IF(AV)| 1 A
VR| 1200 V
VF at IF| 1.10V
trr| 75 ns
Tj max.| 175 °C
Package| SMA (DO-214AC)
Circuit configuration| Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER| SYMBOL| TEST CONDITIONS| VALUES| UNITS
Peak repetitive reverse voltage| VRRM| | 1200| V
Average rectified forward current| IFomo| Tsp = 144 °C, D = 0.5| 1| A
Non-repetitive peak surge current| IFsm| Tj = 25 °C, 8.3 ms sine pulse| 21
Operating junction and storage temperatures| Tj, TStg| | -55 to +175| °C
ELECTRICAL SPECIFICATIONS (T j = 25 °C unless otherwise specified)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNITS
Breakdown voltage, blocking voltage| VBR, VR| IR = 100 pA| 1200| | | V
Forward voltage, per diode| VF| IF = 1 A|
–
| 1.35| 1.80|
| | IF = 1 A, T, = 125 °C|
–
| 1.17| 1.55|
| | IF = 1 A, T j = 150 °C|
–
| 1.10| 1.44|
Reverse leakage current, per diode| IR| VR = VR rated|
–
| | 5| pA
| | T j = 150 °C, VR = VA rated|
–
| | 50|
Junction capacitance| CT| VR = 1200 V|
–
| 3.5| | pF
DYNAMIC RECOVERY CHARACTERISTICS (T j = 25 °C unless otherwise
specified)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNITS
Reverse recovery time| trr| IF = 0.5 A, IR = 1 A, Irr = 0.25 A| | | 75| ns
| | T j = 25 °C| IF = 1 A, dIF/dt = 200 A/ps, VR = 800 V| | 99| |
| | Tj = 125 °C| | | 137| –|
Peak recovery current| IRnm| T j = 25 °C| | | 3.5| –| A
| | Tj = 125 °C| | | 4.5| –|
Reverse recovery charge| Qrr| T j = 25 °C| | | 150| –| nC
| | T = 125 °C| | | 286| –|
THERMAL – MECHANICAL SPECIFICATIONS
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNITS
Maximum junction and storage temperature range| T j, Tstg| | -55| | 175|
Thermal resistance, junction to mount| RthJM (1)| Device mounted on PCB with2
x 3.5 mm soldering lands| | 15| 18| aCAV
Thermal resistance, junction to ambient| RthJA| Device mounted on PCB with
recommended pad size| | 110| | aCAV
Approximate weight| | | 0.07| g
Marking device| | Case style SMA (DO-214AG)| 1H12
Note
(1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual
interface test method (TDIM)
Note
(1) Formula used: TC = TJ – (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 – D); IR at VR1 = rated V
Notes
-
diF/dt – rate of change of current through zero crossing
-
IRRM – peak reverse recovery current
-
trr – reverse recovery time measured from t0, crossing point of negative going IF, to point t10%, 0.1 IRRM
-
Qrr – area under curve defined by t0 and t10 %
-
di(rec)M/dt – peak rate of change of current during tb portion of trr
ORDERING INFORMATION TABLE
Device code
– Vishay Semiconductors product
– Circuit configuration: E = single diode
– 7 = FRED generation 7
– M = SMA package
– Process type, H = hyperfast recovery
– Current rating (01 = 1 A)
– Voltage code (12 = 1200 V)
– M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N| QUANTITY PER REEL| MINIMUM ORDER QUANTITY|
PACKAGING DESCRIPTION
VS-E7MH0112-M3/1| 7500| 7500| 13″diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions| www.vishay.com/doc?95400
Part marking information|
www.vishay.com/doc?95472
Packaging information|
www.vishay.com/doc?95404
SPICE model| www.vishay.com/doc?97060
DIMENSIONS
SMA
DIMENSIONS in inches (millimeters)
Disclaimer
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CUSTOMER SUPPORT
For technical questions, contact:
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HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED
HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
References
- Vishay Intertechnology: Passives & Discrete Semiconductors
- vishay.com/doc?32571
- vishay.com/doc?87401
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