VISHAY SIHP25N40D-E3 Discrete Semiconductor Products Owner’s Manual

: August 13, 2024
: VISHAY

Table of Contents

VISHAY SIHP25N40D-E3 Discrete Semiconductor Products
Product Usage Instructions
FEATURES
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY SIHP25N40D-E3 Discrete Semiconductor Products

Product Specifications

Manufacturer: Vishay Siliconix
Product Model: SiHP25N40D
Type: D Series Power MOSFET
N-Channel MOSFET
Package: TO-220AB
Drain-Source Voltage: 450 V
Gate-Source Voltage: 10 V
Pulsed Drain Current: 88 A
Linear Derating Factor: 0.17
Thermal Resistance (Junction-to-Ambient): 62°C/W (typical), 0.45°C/W (max)

Product Usage Instructions

Application Areas
This product is suitable for various applications including

Welding
Induction Heating
Motor Drives
Battery Chargers

Ordering Information
When ordering, choose from the following options

TO-220AB Lead (Pb)-free: SiHP25N40D-E3
TO-220AB Lead (Pb)-free and Halogen-free: SiHP25N40D-GE3

Thermal Resistance Ratings
The thermal resistance values for this product are as follows

Junction-to-Ambient: 62°C/W (typical), 0.45°C/W (max)
Junction-to-Case (Drain): Not specified

Frequently Asked Questions (FAQ)

Is this product RoHS compliant?
- No, this product contains Pb terminations and is not RoHS compliant. However, there may be exemptions.
What is the maximum Drain-Source Voltage supported by this MOSFET?
- The maximum Drain-Source Voltage supported is 450 V.

SiHP25N40D

Vishay Siliconix

www.vishay.com

D Series Power MOSFET

PRODUCT SUMMARY

FEATURES

Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
Compliant to RoHS Directive 2011/65/EU

Note
Pb containing terminations are not RoHS compliant, exemptions may apply

APPLICATIONS

Consumer Electronics
- Displays (LCD or Plasma TV)
Lighting
Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
SMPS

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| SiHP25N40D-E3
Lead (Pb)-free and Halogen-free| SiHP25N40D-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 400| V
Gate-Source Voltage| VGS| ± 30
Gate-Source Voltage AC (f > 1 Hz)| 30
Continuous Drain Current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 25| A
TC = 100 °C| 16
Pulsed Drain Current| IDM| 78
Linear Derating Factor| | 2.2| W/°C
Single Pulse Avalanche Energy| EAS| 556| mJ
Maximum Power Dissipation| PD| 278| W
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 150| °C
Drain-Source Voltage Slope| TJ = 125 °C| dV/dt| 24| V/ns
Reverse Diode dV/dtd| 0.6
Soldering Recommendations (Peak Temperature)| for 10 s| | 300c| °C

Notes

Repetitive rating; pulse width limited by maximum junction temperature.
VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 17 A.
1.6 mm from case.
ISD ≤ID, starting TJ = 25 °C.

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62| °C/W
Maximum Junction-to-Case (Drain)| RthJC| –| 0.45
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 400| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 250 μA| –| 0.5| –| V/°C
Gate-Source Threshold Voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3| –| 5| V
Gate-Source Leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 400 V, VGS = 0 V| –| –| 1|

μA

VDS = 320 V, VGS = 0 V, TJ = 125 °C| –| –| 10
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 13 A| –| 0.14| 0.17| W
Forward Transconductance| gfs| VDS = 50 V, ID = 13 A| –| 7.4| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 100 V,

f = 1 MHz

| –| 1707| –| pF
Output Capacitance| Coss| –| 177| –
Reverse Transfer Capacitance| Crss| –| 19| –
Total Gate Charge| Qg| VGS = 10 V| ID = 13 A, VDS = 320 V| –| 44| 88| nC
Gate-Source Charge| Qgs| –| 12| –
Gate-Drain Charge| Qgd| –| 23| –
Turn-On Delay Time| td(on)| VDD = 320 V, ID = 13 A, VGS = 10 V, Rg = 24.6 W| –| 21| 42| ns
Rise Time| tr| –| 57| 86
Turn-Off Delay Time| td(off)| –| 40| 80
Fall Time| tf| –| 37| 74
Gate Input Resistance| Rg| f = 1 MHz, open drain| –| 1.8| –| W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the

integral reverse p – n junction diode

| –| –| 24| A
Pulsed Diode Forward Current| ISM| –| –| 78
Diode Forward Voltage| VSD| TJ = 25 °C, IS = 13 A, VGS = 0 V| –| –| 1.2| V
Reverse Recovery Time| trr| TJ = 25 °C, IF = IS = 13 A,

dI/dt = 100 A/μs, VR = 20 V

| –| 353| –| ns
Reverse Recovery Charge| Qrr| –| 4.4| –| μC
Reverse Recovery Current| IRRM| –| 24| –| A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91483

Disclaimer

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Revision: 01-Jan-2024

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