VISHAY SUD19P06-60L Siliconix | Discrete Semiconductor

: August 13, 2024
: VISHAY

Table of Contents

VISHAY SUD19P06-60L Siliconix
Product Usage Instructions
FEATURES
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
TO-252AA Case Outline
Legal Disclaimer Notice
Disclaimer
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY SUD19P06-60L Siliconix

Product Specifications

Brand: Vishay Siliconix
Model: SUD19P06-60L
VDS (V): 60
rDS(on) (Ω): 0.060 at VGS = -10 V, 0.077 at VGS = -4.5 V
ID (A): 19 – 16.8
Qg (Typ): 26
Package: TO-252
Type: P-Channel MOSFET
RoHS Compliant

Product Usage Instructions

Operating Guidelines
Follow these steps to properly use the product:

Ensure the operating voltage does not exceed 60V.
Check the gate-source voltage for proper operation.
Refer to the datasheet for detailed electrical characteristics.

Installation Instructions

To install the product:

Mount the device on a suitable PCB material.
Connect the drain as specified in the documentation.
Observe the thermal resistance ratings for optimal performance.

Maintenance and Care
To maintain the product:

Avoid exceeding the specified maximum ratings.
Keep the device clean and free from debris.
Store in a dry and cool environment when not in use.

Frequently Asked Questions (FAQ)

Q: What is the maximum drain-source voltage for this product?
A: The maximum drain-source voltage is 60V.
Q: Is this product RoHS compliant?
A: Yes, this product is RoHS compliant.
Q: What is the typical gate charge value?
A: The typical gate charge value is 26.

P-Channel 60-V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

FEATURES

TrenchFET® Power MOSFET
175 °C Junction Temperature

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter| Symbol| Limit| Unit
Drain-Source Voltage| VDS| – 60| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current (TJ = 175 °C)| TC = 25 °C| ID| – 19|

A

TC = 125 °C| – 11
Pulsed Drain Current| IDM| – 30
Avalanche Current, Single Pulse|

L = 0.1 mH

| IAS| – 22
Repetitive Avalanche Energy, Single Pulsea| EAS| 24.2| mJ

Power Dissipation

| TC = 25 °C| PD| 46c|

W

TA = 25 °C| 2.7b, c
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to 175| °C
THERMAL RESISTANCE RATINGS

°C/W

Steady State| 45| 55
Junction-to-Case| RthJC| 2.7| 3.25

Notes

Duty cycle ≤ 1 %.
When monuted on 1″ square PCB (FR-4 material).
See SOA curve for voltage derating.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

µA

Drain-Source On-State Resistancea

|

rDS(on)

| VGS = – 10 V, ID = – 10 A| | 0.048| 0.060|

W

VGS = 0 V, VDS = – 25 V, f = 1 MHz

| | 1140| 1710|

pF

VDS = – 30 V, VGS = – 10 V, ID = – 10 A

| | 26| 40|

nC

Gate-Source Charge| Qgs| | 4.5|
Gate-Drain Charge| Qgd| | 7.0|
Gate Resistance| Rg| f = 1 MHz| | 7.0| | W
Turn-On Delay Timec| td(on)|

VDD = – 30 V, RL = 3 W

ID @ – 19 A, VGEN = – 10 V, Rg = 2.5 W

| | 8| 15|

ns

Rise Timec| tr| | 9| 15
Turn-Off Delay Timec| td(off)| | 65| 100
Fall Timec| tf| | 30| 45
Drain-Source Body Diode Characteristics (TC = 25 °C)b
Continuous Current| IS| | | | – 30| A
Pulsed Current| ISM| | | | – 30
Forward Voltagea| VSD| IF = – 19 A, VGS = 0 V| | – 1.0| – 1.5| V
Reverse Recovery Time| trr| IF = – 19 A, di/dt = 100 A/µs| | 41| 61| ns

Notes

Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

THERMAL RATINGS

TO-252AA Case Outline

VERSION 1: FACILITY CODE = Y

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.38
A1| –| 0.127
b| 0.64| 0.88
b2| 0.76| 1.14
b3| 4.95| 5.46
C| 0.46| 0.61
C2| 0.46| 0.89
D| 5.97| 6.22
D1| 4.10| –
E| 6.35| 6.73
E1| 4.32| –
H| 9.40| 10.41
e| 2.28 BSC
e1| 4.56 BSC
L| 1.40| 1.78
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.01| 1.52

VERSION 2: FACILITY CODE = N

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.39
A1| –| 0.13
b| 0.65| 0.89
b1| 0.64| 0.79
b2| 0.76| 1.13
b3| 4.95| 5.46
c| 0.46| 0.61
c1| 0.41| 0.56
c2| 0.46| 0.60
D| 5.97| 6.22
D1| 5.21| –
E| 6.35| 6.73
E1| 4.32| –
e| 2.29 BSC
H| 9.94| 10.34
| MILLIMETERS
---|---
DIM.| MIN.| MAX.
L| 1.50| 1.78
L1| 2.74 ref.
L2| 0.51 BSC
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.14| 1.49
L6| 0.65| 0.85
q| 0°| 10°
q1| 0°| 15°
q2| 25°| 35°

Notes

Dimensioning and tolerance confirm to ASME Y14.5M-1994
All dimensions are in millimeters. Angles are in degrees
Heat sink side flash is max. 0.8 mm
Radius on terminal is optional

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

Recommended Minimum Pads
Dimensions in Inches/(mm)

Legal Disclaimer Notice

Vishay

Disclaimer

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