VISHAY Si2336DS N-Channel 30 V D-S MOSFET Owner’s Manual

**VISHAY Si2336DS N-Channel 30 V D-S MOSFET Owner’s Manual

**

PRODUCT SUMMARY

V DS (V)| R DS(on) ( W )| I D (A) a| Q g (Typ.)
---|---|---|---
30| 0.042 at VGS = 4.5 V| 5.2| 5.7 nC
0.046 at VGS = 2.5 V| 4.9
0.052 at VGS = 1.8 V| 4.1

*Si2336DS (N4) Marking Code**

Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Material categorization:
  For definitions of compliance please see www.vishay.com/doc?99912

RoHS Complaint

APPLICATIONS

• DC/DC Converters
• Boost Converters

ABSOLUTE MAXIMUM RATINGS

(TA = 25 °C, unless otherwise noted)

ID

| 5.2| A
TC = 70 °C| 4.1
TA = 25 °C| 4.3b, c
TA = 70 °C| 3.5b, c
Pulsed Drain Current| IDM| 20

Continuous Source-Drain Diode Current

| TC = 25 °C|

IS

| 1.5
TA = 25 °C| 1b, c
Maximum Power Dissipation| TC = 25 °C|

PD

| 1.8| W
TC = 70 °C| 1.1
TA = 25 °C| 1.25b, c
TA = 70 °C| 0.8b, c
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to 150| °C
Soldering Recommendations (Peak Temperature)d, e|  | 260

THERMAL RESISTANCE RATINGS

Notes:

• a. TC = 25 °C.
• b. Surface mounted on 1″ x 1″ FR4 board.
• c. t = 5 s.
• d. Maximum under steady state conditions is 130 °C/W

SPECIFICATIONS  (TJ = 25 °C, unless otherwise noted)

Parameter| Symbol| Test Conditions| Min.| Typ.| Max.| Unit
---|---|---|---|---|---|---
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 µA| 30|  |  | V
VDS Temperature Coefficient| DVDS/TJ| ID = 250 µA|  | 31|  | mV/°C
VGS(th) Temperature Coefficient| DVGS(th)/TJ|  | – 2.7|
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS , ID = 250 µA| 0.4|  | 1| V
Gate-Source Leakage| IGSS| VDS = 0 V, VGS = ± 8 V|  |  | ± 100| nA
Zero Gate Voltage Drain Current|

IDSS

| VDS = 30 V, VGS = 0 V|  |  | 1| µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C|  |  | 10
On-State Drain Currenta| ID(on)| VDS ³ 5 V, VGS = 10 V| 10|  |  | A
Drain-Source On-State Resistancea| RDS(on)| VGS = 4.5 V, ID = 3.8 A|  | 0.034| 0.042| W
VGS = 2.5 V, ID = 3.6 A|  | 0.038| 0.046
VGS = 1.8 V, ID = 2 A|  | 0.041| 0.052
Forward Transconductancea| gfs| VDS = 15 V, ID = 3.8 A|  | 30|  | S
Dynamic b
Input Capacitance| Ciss| VDS = 15 V, VGS = 0 V, f = 1 MHz|  | 560|  |

pF

Output Capacitance| Coss|  | 60|
Reverse Transfer Capacitance| Crss|  | 27|
Total Gate Charge|

Qg

| VDS = 15 V, VGS = 8 V, ID = 3.4 A|  | 10| 15| nC
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A|  | 5.7| 8.6
Gate-Source Charge| Qgs|  | 0.85|
Gate-Drain Charge| Qgd|  | 0.75|
Gate Resistance| Rg| f = 1 MHz| 0.6| 3| 6| W
Turn-On Delay Time| td(on)| VDD = 15 V, RL = 4.3 W

ID @ 3.5 A, VGEN = 4.5 V, Rg = 1 W

|  | 6| 12| ns
Rise Time| tr|  | 10| 20
Turn-Off Delay Time| td(off)|  | 20| 40
Fall Time| tf|  | 10| 20
Turn-On Delay Time| td(on)| VDD = 15 V, RL = 4.3 W

ID @ 3.5 A, VGEN = 8 V, Rg = 1 W

|  | 5| 10
Rise Time| tr|  | 10| 20
Turn-Off Delay Time| td(off)|  | 17| 30
Fall Time| tf|  | 10| 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| TC = 25 °C|  |  | 1.5| A
Pulse Diode Forward Current| ISM|  |  |  | 20
Body Diode Voltage| VSD| IS = 3.5 A, VGS = 0 V|  | 0.8| 1.2| V
Body Diode Reverse Recovery Time| trr| IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C|  | 15| 30| ns
Body Diode Reverse Recovery Charge| Qrr|  | 6| 12| nC
Reverse Recovery Fall Time| ta|  | 8|  | ns
Reverse Recovery Rise Time| tb|  | 7|

Notes:

a. Pulse test; pulse width < 300 µs, duty cycle < 2 %
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

Safe Operating Area, Junction-to-Ambient

**Current Derating***

Power Derating

• The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71978.

Package Information

SOT-23 (TO-236): 3-LEAD

ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

Application Note 826

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692)

Recommended Minimum Pads Dimensions in Inches/(mm)

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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