VISHAY Si2336DS N-Channel 30 V D-S MOSFET Owner’s Manual
- August 12, 2024
- VISHAY
Table of Contents
- PRODUCT SUMMARY
- FEATURES
- APPLICATIONS
- ABSOLUTE MAXIMUM RATINGS
- THERMAL RESISTANCE RATINGS
- SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
- TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
- Package Information
- Application Note 826
- Legal Disclaimer Notice
- Technical questions
- References
- Read User Manual Online (PDF format)
- Download This Manual (PDF format)
**VISHAY Si2336DS N-Channel 30 V D-S MOSFET Owner’s Manual
**
PRODUCT SUMMARY
V DS (V)| R DS(on) ( W )| I D (A)
a| Q g (Typ.)
---|---|---|---
30| 0.042 at VGS = 4.5 V| 5.2| 5.7 nC
0.046 at VGS = 2.5 V| 4.9
0.052 at VGS = 1.8 V| 4.1
*Si2336DS (N4) Marking Code**
Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
RoHS Complaint
APPLICATIONS
- DC/DC Converters
- Boost Converters
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V |
| Gate-Source Voltage | VGS | ± 8 | |
| Continuous Drain Current (TJ = 150 °C) | TC = 25 °C |
ID
| 5.2| A
TC = 70 °C| 4.1
TA = 25 °C| 4.3b, c
TA = 70 °C| 3.5b, c
Pulsed Drain Current| IDM| 20
Continuous Source-Drain Diode Current
| TC = 25 °C|
IS
| 1.5
TA = 25 °C| 1b, c
Maximum Power Dissipation| TC = 25 °C|
PD
| 1.8| W
TC = 70 °C| 1.1
TA = 25 °C| 1.25b, c
TA = 70 °C| 0.8b, c
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to 150| °C
Soldering Recommendations (Peak Temperature)d, e| | 260
THERMAL RESISTANCE RATINGS
| Parameter | Symbol | Typical | Maximum | Unit |
|---|---|---|---|---|
| Maximum Junction-to-Ambientb, d | t £ 5 s | RthJA | 80 | 100 |
| Maximum Junction-to-Foot (Drain) | Steady State | RthJF | 55 | 70 |
Notes:
- a. TC = 25 °C.
- b. Surface mounted on 1″ x 1″ FR4 board.
- c. t = 5 s.
- d. Maximum under steady state conditions is 130 °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter| Symbol| Test Conditions| Min.| Typ.|
Max.| Unit
---|---|---|---|---|---|---
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 µA| 30| | | V
VDS Temperature Coefficient| DVDS/TJ| ID = 250 µA| | 31| | mV/°C
VGS(th) Temperature Coefficient| DVGS(th)/TJ| | – 2.7|
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS , ID = 250 µA| 0.4| | 1| V
Gate-Source Leakage| IGSS| VDS = 0 V, VGS = ± 8 V| | | ± 100| nA
Zero Gate Voltage Drain Current|
IDSS
| VDS = 30 V, VGS = 0 V| | | 1| µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C| | | 10
On-State Drain Currenta| ID(on)| VDS ³ 5 V, VGS = 10 V| 10| | | A
Drain-Source On-State Resistancea| RDS(on)| VGS = 4.5 V, ID = 3.8 A| | 0.034|
0.042| W
VGS = 2.5 V, ID = 3.6 A| | 0.038| 0.046
VGS = 1.8 V, ID = 2 A| | 0.041| 0.052
Forward Transconductancea| gfs| VDS = 15 V, ID = 3.8 A| | 30| | S
Dynamic b
Input Capacitance| Ciss| VDS = 15 V, VGS = 0 V, f = 1 MHz| | 560| |
pF
Output Capacitance| Coss| | 60|
Reverse Transfer Capacitance| Crss| | 27|
Total Gate Charge|
Qg
| VDS = 15 V, VGS = 8 V, ID = 3.4 A| | 10| 15| nC
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A| | 5.7| 8.6
Gate-Source Charge| Qgs| | 0.85|
Gate-Drain Charge| Qgd| | 0.75|
Gate Resistance| Rg| f = 1 MHz| 0.6| 3| 6| W
Turn-On Delay Time| td(on)| VDD = 15 V, RL = 4.3 W
ID @ 3.5 A, VGEN = 4.5 V, Rg = 1 W
| | 6| 12| ns
Rise Time| tr| | 10| 20
Turn-Off Delay Time| td(off)| | 20| 40
Fall Time| tf| | 10| 20
Turn-On Delay Time| td(on)| VDD = 15 V, RL = 4.3 W
ID @ 3.5 A, VGEN = 8 V, Rg = 1 W
| | 5| 10
Rise Time| tr| | 10| 20
Turn-Off Delay Time| td(off)| | 17| 30
Fall Time| tf| | 10| 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| TC = 25 °C| | | 1.5| A
Pulse Diode Forward Current| ISM| | | | 20
Body Diode Voltage| VSD| IS = 3.5 A, VGS = 0 V| | 0.8| 1.2| V
Body Diode Reverse Recovery Time| trr| IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25
°C| | 15| 30| ns
Body Diode Reverse Recovery Charge| Qrr| | 6| 12| nC
Reverse Recovery Fall Time| ta| | 8| | ns
Reverse Recovery Rise Time| tb| | 7|
Notes:
a. Pulse test; pulse width < 300 µs, duty cycle < 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
Safe Operating Area, Junction-to-Ambient
**Current Derating***
Power Derating
- The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71978.
Package Information
SOT-23 (TO-236): 3-LEAD
| Dim | MILLIMETERS | INCHES |
|---|---|---|
| Min | Max | Min |
| A | 0.89 | 1.12 |
| A 1 | 0.01 | 0.10 |
| A 2 | 0.88 | 1.02 |
| b | 0.35 | 0.50 |
| c | 0.085 | 0.18 |
| D | 2.80 | 3.04 |
| E | 2.10 | 2.64 |
| E 1 | 1.20 | 1.40 |
| e | 0.95 BSC | 0.0374 Ref |
| e 1 | 1.90 BSC | 0.0748 Ref |
| L | 0.40 | 0.60 |
| L 1 | 0.64 Ref | 0.025 Ref |
| S | 0.50 Ref | 0.020 Ref |
| q | 3° | 8° |
ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479
Application Note 826
RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692)
Recommended Minimum Pads Dimensions in Inches/(mm)
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