VISHAY SiHF8N50D Power Mosfet Owner’s Manual
- August 11, 2024
- VISHAY
Table of Contents
VISHAY SiHF8N50D Power Mosfet
Specifications
- Brand: Vishay Siliconix
- Product Name: SiHF8N50D
- Product Type: D Series Power MOSFET
- Package Type: TO-220 FULLPAK
- Channel Type: N-Channel
- Maximum Drain-Source Voltage: 550 V
- Gate-Source Voltage: 10 V
- Single Pulse Avalanche Energy: 0.85 J
- Thermal Resistance (Junction-to-Ambient): Max. 65 °C/W
- Thermal Resistance (Junction-to-Case): Max. 3.8 °C/W
Product Usage Instructions
Electrical Characteristics
- Ensure the Drain-Source Voltage does not exceed the maximum rating of 550 V.
- Apply a Gate-Source Voltage of 10 V for normal operation.
- Follow the recommended pulsed drain current and linear derating factor guidelines.
Thermal Management
- Maintain proper thermal management to prevent overheating.
- Consider the maximum junction-to-ambient and junction-to-case thermal resistances.
FAQ:
Q: What is the maximum Drain-Source Breakdown Voltage of the SiHF8N50D
MOSFET?
A: The maximum Drain-Source Breakdown Voltage is 500 V.
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.| 550
RDS(on) max. (W) at 25 °C| VGS = 10 V| 0.85
Qg max. (nC)| 30
Qgs (nC)| 4
Qgd (nC)| 7
Configuration| Single
FEATURES
- Optimal design
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
- Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): Ron x Qg
- Fast switching
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Consumer electronics
- Displays (LCD or plasma TV)
- Server and telecom power supplies
- SMPS
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
ORDERING INFORMATION
Package| TO-220 FULLPAK
Lead (Pb)-free| SiHF8N50D-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 500|
V
Gate-Source Voltage|
VGS
| ± 30
Gate-Source Voltage AC (f > 1 Hz)| 30
Continuous Drain Current (TJ = 150 °C) e| VGS at 10 V| TC = 25 °C|
ID
| 8.7|
A
TC = 100 °C| 5.5
Pulsed Drain Current a| IDM| 18
Linear Derating Factor| | 0.26| W/°C
Single Pulse Avalanche Energy b| EAS| 56| mJ
Maximum Power Dissipation| PD| 33| W
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Drain-Source Voltage Slope| TJ = 125 °C| dV/dt| 24| V/ns
Reverse Diode dV/dt d| 0.37
Soldering Recommendations (Peak temperature) c| For 10 s| | 300| °C
Mounting Torque| M3 screw| | 0.6| Nm
Notes
- Repetitive rating; pulse width limited by maximum junction temperature.
- VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 7 A.
- 1.6 mm from case.
- ISD ID, starting TJ = 25 °C.
- Limited by maximum junction temperature.
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 65| °C/W
Maximum Junction-to-Case (Drain)| RthJC| –| 3.8
Note
- Repetitive rating; pulse width limited by maximum junction temperature.
- Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
- Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit 
TO-220 FULLPAK (High Voltage)
- OPTION 1: FACILITY CODE = 9
| MILLIMETERS
---|---
DIM.| MIN.| NOM.| MAX.
A| 4.60| 4.70| 4.80
b| 0.70| 0.80| 0.91
b1| 1.20| 1.30| 1.47
b2| 1.10| 1.20| 1.30
C| 0.45| 0.50| 0.63
D| 15.80| 15.87| 15.97
e| 2.54 BSC
E| 10.00| 10.10| 10.30
F| 2.44| 2.54| 2.64
G| 6.50| 6.70| 6.90
L| 12.90| 13.10| 13.30
L1| 3.13| 3.23| 3.33
Q| 2.65| 2.75| 2.85
Q1| 3.20| 3.30| 3.40
Ø R| 3.08| 3.18| 3.28
Notes
- To be used only for process drawing
- These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
- All critical dimensions should C meet Cpk > 1.33
- All dimensions include burrs and plating thickness
- No chipping or package damage
- Facility code will be the 1st character located at the 2nd row of the unit marking
OPTION 2: FACILITY CODE = Y
| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.570| 4.830| 0.180| 0.190
A1| 2.570| 2.830| 0.101| 0.111
A2| 2.510| 2.850| 0.099| 0.112
b| 0.622| 0.890| 0.024| 0.035
b2| 1.229| 1.400| 0.048| 0.055
b3| 1.229| 1.400| 0.048| 0.055
c| 0.440| 0.629| 0.017| 0.025
D| 8.650| 9.800| 0.341| 0.386
d1| 15.88| 16.120| 0.622| 0.635
d3| 12.300| 12.920| 0.484| 0.509
E| 10.360| 10.630| 0.408| 0.419
e| 2.54 BSC| 0.100 BSC
L| 13.200| 13.730| 0.520| 0.541
L1| 3.100| 3.500| 0.122| 0.138
n| 6.050| 6.150| 0.238| 0.242
Ø P| 3.050| 3.450| 0.120| 0.136
u| 2.400| 2.500| 0.094| 0.098
V| 0.400| 0.500| 0.016| 0.020
ECN: E19-0180-Rev. D, 08-Apr-2019 DWG: 5972
Notes
- To be used only for process drawing
- These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
- All critical dimensions should C meet Cpk > 1.33
- All dimensions include burrs and plating thickness
- No chipping or package damage
- Facility code will be the 1st character located at the 2nd row of the unit marking
Disclaimer
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