VISHAY Si8406DB Mosfet Owner’s Manual

VISHAY Si8406DB Mosfet

Specifications

• Brand: Vishay Siliconix
• Model: Si8406DB
• Type: N-Channel MOSFET
• Drain-Source Voltage (VDS): 20V
• Maximum On-State Resistance (RDS(on)): 0.033Ω at VGS = 4.5V, 0.037Ω at VGS = 2.5V, 0.042Ω at VGS = 1.8V
• Continuous Drain Current (ID ): 16A
• Total Gate Charge (Qg): 7.5 nC

USING INSTRUCTION

PRODUCT SUMMARY

V DS (V)| R DS(on) ( W ) MAX.| I D (A)| Q g (TYP.)

20

| 0.033 at VGS = 4.5 V| 16 e| 7.5 nC
0.037 at VGS = 2.5 V| 16 e
0.042 at VGS = 1.8 V| 15

Marking Code : xxxx = 8406
xxx = Date/lot traceability code

Ordering Information
Si8406DB-T2-E1 (Lead (Pb)-free and halogen-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 20| V
Gate-Source Voltage| VGS| ± 8
Continuous Drain Current (TJ = 150°C)| TC = 25°C| ID| 16 e| A
TC = 70°C| 13.5
TA = 25°C| 7.8 a,b
TA = 70°C| 6.2 a,b
Pulsed Drain Current (t = 300 μs)| IDM| 30
Continuous Source-Drain Diode Current| TC = 25°C| IS| 11
TA = 25°C| 2.3 a,b
Maximum Power Dissipation| TC = 25°C| PD| 13| W
TC = 70°C| 8.4
TA = 25°C| 2.77 a,b
TA = 70°C| 1.77 a,b
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Package Reflow Conditions c| IR/Convection| | 260

Notes

• a. Surface mounted on 1″ x 1″ FR4 board.
• b. t = 10 s.
• c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
• d. Case is defined as the top surface of the package.
• e. TC = 25 °C package limited.

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYPICAL| MAXIMUM| UNIT
Maximum Junction-to-Ambient a,b| RthJA| 37| 45| °C/W
Maximum Junction-to-Case (Drain)| Steady State| RthJC| 7| 9.5

Notes

• a. Surface mounted on 1″ x 1″ FR4 board.
• b. Maximum under steady state conditions is 85 °C/W.
• c. Case is defined as the top surface of the package.

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0, ID = 250 μA| 20| –| –| V
VDS Temperature Coefficient| DVDS/TJ| ID = 250 μA| –| 18| –| mV/°C
VGS(th) Temperature Coefficient| DVGS(th)/TJ| –| -3| –
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 0.4| –| 0.85| V
Gate-Source Leakage| IGSS| VDS = 0 V, VGS = ± 8 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 20 V, VGS = 0 V| –| –| 1| μA
VDS = 20 V, VGS = 0 V, TJ = 70 °C| –| –| 10
On-State Drain Current a| ID(on)| VDS ³ 5 V, VGS = 4.5 V| 5| –| –| A
Drain-Source On-State Resistance a|

RDS(on)

| VGS = 4.5 V, ID = 1 A| –| 0.026| 0.033| W
VGS = 2.5 V, ID = 1 A| –| 0.028| 0.037
VGS = 1.8 V, ID = 1 A| –| 0.030| 0.042
Forward Transconductance a| gs| VDS = 10 V, ID = 1 A| –| 20| | S
Dynamic b
Input Capacitance| Ciss| VDS = 10 V, VGS = 0 V, f = 1 MHz| –| 830| –| pF
Output Capacitance| Coss| –| 146| –
Reverse Transfer Capacitance| Cross| –| 61| –
Total Gate Charge| Qg| VDS = 10 V, VGS = 8 V, ID = 1 A| –| 13| 20| C
VDS = 10 V, VGS = 4.5 V, ID = 1 A| –| 7.5| 12
Gate-Source Charge| Qgs| –| 1.1| –
Gate-Drain Charge| Qgd| –| 0.8| –
Gate Resistance| Rg| VGS = 0.1 V, f = 1 MHz| –| 3.6| –| W
Turn-On Delay Time| td(on)| VDD = 10 V, RL = 10 W
ID @ 1 A, VGEN = 4.5 V, Rg = 1 W| –| 7| 15| ns
Rise Time| tr| –| 18| 40
Turn-Off Delay Time| td(off)| –| 30| 60
Fall Time| tf| –| 10| 20
Turn-On Delay Time| td(on)| VDD = 10 V, RL = 10 W
ID = 1 A, VGEN = 8 V, Rg = 1 W| –| 5| 10| ns
Rise Time| tr| –| 17| 35
Turn-Off Delay Time| td(off)| –| 25| 50
Fall Time| tf| –| 10| 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| TC = 25 °C| –| –| 20| A
Pulse Diode Forward Current| ISM| | –| –| 30|
Body Diode Voltage| VSD| IS = 1 A, VGS = 0| –| 0.7| 1.2| V
Body Diode Reverse Recovery Time| try| IF = 1 A, dI/dt = 100 A/μs, TJ = 25 °C| –| 15| 30| ns
Body Diode Reverse Recovery Charge| Qrr| –| 5| 10| C
Reverse Recovery Fall Time| ta| –| 8| –| ns
Reverse Recovery Rise Time| TB| –| 7| –

Notes

• a. Pulse test; pulse width ‹ 300 μs, duty cycle ‹ 2 %.
• b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and the functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics
Transfer Characteristics

On-resistance vs. Drain Current and Gate Voltage
Capacitance

Gate Charge
On-Resistance vs. Junction Temperature

*Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Safe Operating Area, Junction-to-Ambient Current Derating
Power Derating
**

The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to- case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating when this rating falls below the package limit.

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62530.

MICRO FOOT

MICRO FOOT®: 6-Bump (1.5 mm x 1 mm, 0.5 mm Pitch, 0.250 mm Bump Height)

Notes
(unless otherwise specified)

1. Six (6) solder bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. The backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon dieback.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask.
6. is the location of pin 1

Note: Use millimeters as the primary measurement.

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN, OR OTHERWISE.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

FAQ

• Q: What is the maximum Drain-Source Voltage of the Si8406DB MOSFET?
  • A: The maximum Drain-Source Voltage (VDS) is 20V.
• Q: What is the typical Total Gate Charge of the MOSFET?
  • A: The typical Total Gate Charge (Qg) is 7.5 nC.
• Q: Where can I find more information about compliance definitions?
  • A: For definitions of compliance, please visit www.vishay.com/doc?99912.
• Q: What is the ordering information for the Si8406DB MOSFET?
  • A: The ordering information is Si8406DB-T2-E1 (Lead (Pb)-free and halogen-free).

References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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