VISHAY IRF9640 Power MOSFET Instructions
- August 9, 2024
- VISHAY
Table of Contents
- IRF9640 Power MOSFET
- Specifications:
- Description:
- Ordering Information:
- Thermal Resistance Ratings:
- Usage Instructions:
- Installation:
- Electrical Connections:
- Operating Conditions:
- Q: What is the maximum drain-source breakdown voltage of the
- Q: Is the IRF9640 RoHS-compliant?
- Q: What is the recommended torque for mounting the
IRF9640 Power MOSFET
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Specifications:
Brand: Vishay Siliconix
Product: IRF9640 Power MOSFET
Package: TO-220AB
Channel Type: P-Channel MOSFET
VDS (Drain-Source Voltage): -200V
RDS(on) (On-Resistance): 7.1 ohms
Qg max. (Total Gate Charge): 44nC
Qgs (Gate-Source Charge): 27nC
Qgd (Gate-Drain Charge): 14nC
Configuration: Single
Description:
The IRF9640 is a power MOSFET from Vishay Siliconix, offering
fast switching, rugged design, low on-resistance, and
cost-effectiveness. The TO-220AB package is suitable for various
commercial-industrial applications up to 50W power dissipation
levels.
Ordering Information:
Pb-Free Package: IRF9640PbF
Pb-Free and Halogen-Free Package: IRF9640PbF-BE3
Thermal Resistance Ratings:
Maximum Junction-to-Ambient: 62°C/W
Case-to-Sink: 1.0°C/W
Maximum Junction-to-Case: 0.50°C/W
Usage Instructions:
Installation:
-
Ensure the device is powered off and disconnected from the
power source. -
Mount the IRF9640 Power MOSFET securely using a 6-32 or M3
screw with the specified torque. -
Apply thermal grease if needed for better heat
dissipation.
Electrical Connections:
-
Connect the drain, gate, and source pins of the MOSFET properly
to your circuit. -
Make sure the gate-source voltage does not exceed -10V to avoid
damage.
Operating Conditions:
-
Maintain the operating junction temperature within the
specified range. -
Avoid exceeding the maximum ratings for drain-source voltage
and continuous drain current.
FAQ:
Q: What is the maximum drain-source breakdown voltage of the
IRF9640?
A: The maximum drain-source breakdown voltage is -200V.
Q: Is the IRF9640 RoHS-compliant?
A: The datasheet provides information on RoHS-compliance. Some
parts may be RoHS-compliant while others may not be, depending on
terminations.
Q: What is the recommended torque for mounting the
IRF9640?
A: Use a 6-32 or M3 screw with the specified torque for mounting
the IRF9640 Power MOSFET.
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IRF9640
Vishay Siliconix
Power MOSFET
TO-220AB
S G
S D G
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
-200 VGS = -10 V
44 7.1 27 Single
0.50
FEATURES
· Dynamic dV/dt rating
· Repetitive avalanche rated
Available
· P-channel · Fast switching
Available
· Ease of paralleling
· Simple drive requirements
· Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
TO-220AB IRF9640PbF IRF9640PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VDS
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating junction and storage temperature range Soldering recommendations (peak temperature) d
For 10 s
TJ, Tstg
Mounting torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11) b. VDD = -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 , IAS = -11
A (see fig. 12) c. ISD -11 A, dI/dt 150 A/s, VDD VDS, TJ 150 °C d. 1.6 mm from
case
LIMIT -200 ± 20 -11 -6.8 -44 1.0 700 -11 13 125 -5.0 -55 to +150 300 10 1.1
UNIT V V
A
W/°C mJ A mJ W V/ns
°C
lbf · in N · m
S21-0867-Rev. D, 16-Aug-2021
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Document Number: 91086
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IRF9640
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)
RthJA RthCS RthJC
TYP. –
0.50 –
MAX. 62 1.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static Drain-source breakdown voltage VDS temperature coefficient Gate-source
threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic Input
capacitance Output capacitance Reverse transfer capacitance Total gate charge
Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off
delay time Fall time
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, ID = -250 A
Reference to 25 °C, ID = -1 mA
VDS = VGS, ID = -250 A
VGS = ± 20 V
VDS = -200 V, VGS = 0 V
VDS = -160 V, VGS = 0 V, TJ = 125 °C
VGS = -10 V
ID = -6.6 A b
VDS = -50 V, ID = -6.6 A b
-200 –
-2.0 4.1
–
–
V
-0.2
–
V/°C
–
-4.0
V
–
± 100 nA
–
-100
A
–
-500
–
0.50
–
–
S
VGS = 0 V,
–
VDS = -25 V,
–
f = 1.0 MHz, see fig. 5
–
–
VGS = -10 V
ID = -11 A, VDS = -160 V, see fig. 6 and 13 b
–
–
–
VDD = -100 V, ID = -11 A
–
Rg = 9.1 , RD = 8.6 , see fig. 10 b
–
–
1200
–
370
–
pF
81
–
–
44
–
7.1
nC
–
27
14
–
43
–
ns
39
–
38
–
Gate input resistance Internal drain inductance
LD
Between lead, 6 mm (0.25″) from
D
package and center of
G
LS
die contact
S
–
4.5
–
nH
–
7.5
–
Internal source inductance
Rg
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current a
ISM
f = 1 MHz, open drain
MOSFET symbol
showing the integral reverse p -n junction diode
D
G S
0.3
–
1.7
–
–
-11
A
–
–
-44
Body diode voltage
VSD
TJ = 25 °C, IS = -11 A, VGS = 0 V b
–
–
-5
V
Body diode reverse recovery time Body diode reverse recovery charge
trr Qrr
TJ = 25 °C, IF = -11 A, dI/dt = 100 A/s b
–
250
300
ns
2.9
3.6
C
Forward turn-on time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s; duty cycle 2 %
S21-0867-Rev. D, 16-Aug-2021
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Document Number: 91086
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www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9640
Vishay Siliconix
RDS(on), Drain-to-Source On Resistance (Normalized)
– ID, Drain Current (A)
VGS Top – 15 V
– 10 V – 8.0 V – 7.0 V – 6.0 V – 5.5 V – 5.0 V 101 Bottom – 4.5 V
100 100
91086_01
– 4.5 V
20 µs Pulse Width TC = 25 °C 101
– VDS, Drain-to-Source Voltage (V)
Fig. 1 – Typical Output Characteristics, TC = 25 °C
– ID, Drain Current (A)
VGS Top – 15 V
– 10 V
– 8.0 V
– 7.0 V
101
– 6.0 V – 5.5 V
– 5.0 V
Bottom – 4.5 V
– 4.5 V
100 100
91086_02
20 µs Pulse Width TC = 150 °C 101
– VDS, Drain-to-Source Voltage (V)
Fig. 2 – Typical Output Characteristics, TC = 150 °C
101
25 °C
150 °C
– ID, Drain Current (A)
100
4
91086_03
20 µs Pulse Width VDS = – 50 V
5
6
7
8
9
10
– VGS, Gate-to-Source Voltage (V)
Fig. 3 – Typical Transfer Characteristics
3.0 ID = – 11 A VGS = – 10 V
2.5
2.0
1.5
1.0
0.5
0.0 – 60 – 40 – 20 0 20 40 60 80 100 120 140 160
91086_04
TJ, Junction Temperature (°C)
Fig. 4 – Normalized On-Resistance vs. Temperature
2400 2000 1600 1200
VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd
Ciss
Capacitance (pF)
800
400
0 100
91086_05
Coss Crss
101 – VDS, Drain-to-Source Voltage (V)
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
– VGS, Gate-to-Source Voltage (V)
20 ID = – 11 A
16
VDS = – 160 V
VDS = – 100 V
12
VDS = – 40 V
8
4
0 0
91086_06
For test circuit see figure 13
10
20
30
40
50 60
QG, Total Gate Charge (nC)
Fig. 6 – Typical Gate Charge vs. Drain-to-Source Voltage
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– ISD, Reverse Drain Current (A)
101
150 °C 100
25 °C
10-1 0.0
91086_07
VGS = 0 V
1.0
2.0
3.0
4.0
5.0
– VSD, Source-to-Drain Voltage (V)
Fig. 7 – Typical Source-Drain Diode Forward Voltage
102 Operation in this area limited
5
by RDS(on)
10 µs
– ID, Drain Current (A)
2
100 µs
10
5
1 ms
2
1 1
91086_08
TC = 25 °C TJ = 150 °C Single Pulse
10 ms
2
5 10 2
5 102 2
5 103
– VDS, Drain-to-Source Voltage (V)
Fig. 8 – Maximum Safe Operating Area
10
IRF9640
Vishay Siliconix
12 10
8
– ID, Drain Current (A)
6 4
2
0 25
91086_09
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 – Maximum Drain Current vs. Case Temperature
VDS VGS RG
RD D.U.T.
– 10 V
Pulse width 1 µs Duty factor 0.1 %
+VDD
Fig. 10a – Switching Time Test Circuit
VDS 10 %
td(on) tr
td(off) tf
90 % VGS Fig. 10b – Switching Time Waveforms
Thermal Response (ZthJC)
1
D = 0.50 PDM
0.20
0.1 0.10 0.05
0.02 0.01
10-2 10-5
Single Pulse (Thermal Response)
10-4
10-3
10-2
t1 t2
Notes:
1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC
0.1
1
10
91086_11
t1, Rectangular Pulse Duration (s)
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Document Number: 91086
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IRF9640
Vishay Siliconix
VDS
L
RG – 10 V
D.U.T
IAS
tp
0.01
+ VDS
Fig. 12a – Unclamped Inductive Test Circuit 1600
1200
IAS
VDS
VDD tp
V(BR)DSS Fig. 12b – Unclamped Inductive Waveforms
ID Top – 4.9 A
– 7.0 A Bottom – 11 A
EAS, Single Pulse Energy (mJ)
800
400
0 VDD = – 50 V
25
50
75
100
125
150
91086_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
– 10 V QGS
VG
QG QGD
Charge
Fig. 13a – Basic Gate Charge Waveform
12 V
50 k
0.2 µF
0.3 µF
D.U.T. + VDS
VGS
– 3 mA
IG
ID
Current sampling resistors
Fig. 13b – Gate Charge Test Circuit
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D.U.T.
+ –
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations · Low stray inductance · Ground plane · Low
leakage inductance current transformer
–
IRF9640
Vishay Siliconix
–
Rg
· dV/dt controlled by Rg
· ISD controlled by duty factor “D” · D.U.T. – device under test
– VDD
Note · Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D =
P.W. Period
VGS = – 10 Va
D.U.T. lSD waveform
Reverse
recovery
Body diode forward
current
current dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt VDD
Re-applied voltage
Body diode forward drop Inductor current
Ripple 5 %
ISD
Note a. VGS = – 5 V for logic level and – 3 V drive devices
Fig. 14 – For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91086.
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Document Number: 91086
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Vishay
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Revision: 01-Jul-2024
1
Document Number: 91000
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