VISHAY SIHB22N60E E Series Power MOSFET Owner’s Manual

VISHAY SIHB22N60E E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
  • High-intensity discharge (HID)
  • Fluorescent ballast lighting
• Industrial
  • Welding
  • Induction heating
  • Motor drives
  • Battery chargers
  • Renewable energy
  • Solar (PV inverters)

PRODUCT SUMMARY

VDS (V) at TJ max.| 650
RDS(on) max. (W) at 25 °C| VGS = 10 V| 0.18
Qg max. (nC)| 86
Qgs (nC)| 11
Qgd (nC)| 24
Configuration| Single
ORDERING INFORMATION

Package| D2PAK (TO-263)

Lead (Pb)-free and Halogen-free

| SiHB22N60E-GE3
SiHB22N60ET1-GE3
SIHB22N60ET5-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 600| V
Gate-Source Voltage| VGS| ± 30
Continuous Drain Current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 21|

A

TC = 100 °C| 13
Pulsed Drain Current a| IDM| 56
Linear Derating Factor|  | 1.8| W/°C
Single Pulse Avalanche Energy b| EAS| 367| mJ
Maximum Power Dissipation| PD| 227| W
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Drain-Source Voltage Slope| TJ = 125 °C| dV/dt| 70| V/ns
Reverse Diode dV/dt d| 11
Soldering Recommendations (Peak temperature) c| For 10 s|  | 300| °C

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature.
• b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.
• c. 1.6 mm from case.
• d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62| °C/W
Maximum Junction-to-Case (Drain)| RthJC| –| 0.55

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 250 μA| –| 0.71| –| V/°C
Gate-Source Threshold Voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 2| –| 4| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero Gate Voltage Drain Current| IDSS| VDS = 600 V, VGS = 0 V| –| –| 1| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 10
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 11 A| –| 0.15| 0.18| W
Forward Transconductance| gfs| VDS = 8 V, ID = 5 A| –| 6.4| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 100 V,

f = 1 MHz

| –| 1920| –|

pF

Output Capacitance| Coss| –| 90| –
Reverse Transfer Capacitance| Crss| –| 6| –
Effective Output Capacitance, Energy Related a| Co(er)|

VDS = 0 V to 480 V, VGS = 0 V

| –| 73| –
Effective Output Capacitance, Time Related b| Co(tr)| –| 263| –
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 11 A, VDS = 480 V

| –| 57| 86|

nC

Gate-Source Charge| Qgs| –| 11| –
Gate-Drain Charge| Qgd| –| 24| –
Turn-On Delay Time| td(on)|

VDD = 380 V, ID = 11 A, VGS = 10 V, Rg = 4.7 W

| –| 18| 36|

ns

Rise Time| tr| –| 27| 54
Turn-Off Delay Time| td(off)| –| 66| 99
Fall Time| tf| –| 35| 70
Gate Input Resistance| Rg| f = 1 MHz, open drain| 0.3| 0.77| 1.2| W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the integral reverse p – n junction diode    | –| –| 21|

A

Pulsed Diode Forward Current| ISM| –| –| 56
Diode Forward Voltage| VSD| TJ = 25 °C, IS = 11 A, VGS = 0 V| –| –| 1.2| V
Reverse Recovery Time| trr|

TJ = 25 °C, IF = IS = 11 A,

dI/dt = 100 A/μs, VR = 25 V

| –| 344| –| ns
Reverse Recovery Charge| Qrr| –| 5.3| –| μC
Reverse Recovery Current| IRRM| –| 28| –| A

Notes

• a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
• b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91472.

Package Information

TO-263AB (HIGH VOLTAGE)

ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

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