VISHAY IRFPC60LC Siliconix Mouser India Instructions
- June 20, 2024
- VISHAY
Table of Contents
**VISHAY IRFPC60LC Siliconix Mouser India Instructions
**
TO-247AC
N-Channel MOSFET’
PRODUCT SUMMARY
VDS (V)| 600
RDS(on) (W)| VGS = 10 V| 0.40
Qg (max.) (nC)| 120
Qgs (nC)| 29
Qgd (nC)| 48
Configuration| Single
FEATURES
- Ultra low gate charge
- Reduced gate drive requirement
- Enhanced 30 V VGS rating
- Reduced Ciss, Coss, Crss
- Isolated central mounting hole
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate
charge over conventional MOSFETs.
Utilizing advanced Power MOSFETs technology the device improvements allow for
reduced gate drive requirements, faster switching speeds and increased total
system savings.
These device improvements combined with the proven ruggedness and reliability
of Power MOSFETs offer the designer a new standart in power transistors for
switching applications.
The TO-247AC package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because of its isolated
mounting hole.
ORDERING INFORMATION
Package| TO-247AC
Lead (Pb)-free| IRFPC60LCPbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 600| V
Gate-source voltage| VGS| ± 30
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 16| A
TC = 100 °C| 10
Pulsed drain current a| | | IDM| 64
Linear derating factor| | | | 2.2| W/°C
Single pulse avalanche energy b| | | EAS| 1000| mJ
Repetitive avalanche current a| | | IAR| 16| A
Repetitive avalanche energy a| | | EAR| 28| mJ
Maximum power dissipation| TC = 25 °C| PD| 280| W
Peak diode recovery dV/dt c| | | dV/dt| 3.0| V/ns
Operating junction and storage temperature range| | | TJ, Tstg| -55 to +150|
°C
Soldering recommendations (peak temperature)| for 10 s| | 300 d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 7.2 mH, Rg = 25 Ω, IAS = 16 A (see
fig. 12)
c. ISD ≤ 16 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from c
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.45
SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| Vos| VGs = 0 V, ID = 250 pA| 600| | –| V
Vjas temperature coefficient| AVGillij| Reference to 25 °C, ID = 1 mA| –|
0.63| | V/°C
Gate-source threshold voltage| VGSM| VDs = V. ID = 250 pA| 2.0| | 4.0| V
Gate-source leakage| IGss| VGs = ± 20 V| –| | t 100| DA
Zero gate voltage drain current| loss| VDD = 600V, VDD = OV| | | 25| PA
VD = 480 V, VGs = 0 V, Tj = 125 ° C| –| | 250
Drain-source on-state resistance| RDSon)| VGs = 10 V I| io = 9.6 Al’| –| |
0.40| (2
Forward transconductance| gts| VDs = 50 V, ID = 9.6 A| 11| | –| S
Dynamic
Input capacitance| Ciss| VDs = 0 V.
VDs = 25 V.
f = 1.0 MHz, see fig. 5| –| 3500| –| pF
Output capacitance| Coss| –| 400|
Reverse transfer capacitance| Crss| –| 39| –
Output capacitance| 9| VDs=10V| b= 16 A, VDS = 360 V, see fig. 6 and 13 b| | |
| nC
O se| –| –| 29
Effective output capacitance| Ogd| –| –| 48
Total gate charge| feicini| VD0 = 300 V, ID = 16 A,
Rg = 4.3 CI, RD = 18 CI, see fig. 10 lii| –| 17| –| ns
Gate-source charge| t,| –| 57| –
Gate-drain charge| frrioff)| –| 43| –
Turn-on delay time| tr| –| 38| –
Intemal drain inductance| Lo| Between lead, 6 mm (0.251 from package and
center of die contact
| –| 5.0| –| nH
Internal source inductance| Ls| –| 13| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral
reverse p – n junction.
diode
| –| –| 16|
Pulsed diode forward currents| Ism| –| | 64| A
Body diode voltage| VSD| T j = 25 °C, Is = 16 A, VGs= 0 Vb| –| | 2.| V
Body diode reverse recovery time| tn.| | = 16 A, dVdt = 100 A/ps| –| 650| 980|
ns
Body diode reverse recovery charge| On| TJ 25 °C,
= IF| –| 6.0| 9.0| pC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by Ls and Lo)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics, TC = 25 °C
Fig. 2 – Typical Output Characteristics, TC = 150 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 4 – Normalized On-Resistance vs. Temperature
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 8 – Maximum Safe Operating Area
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10 – Switching Time Test Circuit
Fig. 11 – Switching Time Waveforms
Fig. 12 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 13 – Unclamped Inductive Test Circuit
Fig. 14 – Unclamped Inductive Waveforms
Fig. 15 – Maximum Avalanche Energy vs. Drain Current
Fig. 16 – Basic Gate Charge Waveform
Fig. 17 – Gate Charge Test
Peak Diode Recovery dV/dt Test Circuit
Fig. 18 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91244.
Package Information
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|
Notes
- Package reference: JEDEC® TO247, variation AC
- All dimensions are in mm
- Slot required, notch may be rounded
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
- Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition
VERSION 2: FACILITY CODE = Y
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
- Outline conforms to JEDEC outline TO-247 with exception of dimension c
VERSION 3: FACILITY CODE = N
| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29| 15.87
A2| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e| 5.46 BSC
b1| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L| 14.20| 16.10
b3| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N| 7.62 BSC
b5| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –| 7.39
c1| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52| 5.49
D1| 13.08| –| S| 5.51 BSC
ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
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References
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