VISHAY IRFD9024 Power Mosfet Owner’s Manual
- June 1, 2024
- VISHAY
Table of Contents
VISHAY IRFD9024 Power Mosfet
Specifications
| Parameter | Value |
|---|---|
| Product | IRFD9024 Vishay Siliconix Power MOSFET HVMDIP |
| VDS (V) | -60 |
| RDS(on) () | 5.4 |
| Qg (Max.) (nC) | 11 |
| Configuration | Single |
Product Description
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The 4 pin DIP package is a low-cost, machine- insertable case style that can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
Thermal Resistance Ratings
| Parameter | Value |
|---|---|
| Maximum Junction-to-Ambient | 120 |
Product Usage Instructions
Operating Parameters
Operating junction and storage temperature range: -55 to +175 °C
Thermal Considerations
The dual drain in the package serves as a thermal link to dissipate power up to 1 W. Ensure proper heat sinking for efficient operation.
Electrical Characteristics
The MOSFET has specific electrical characteristics such as drain-source breakdown voltage, gate-source threshold voltage, on-state resistance, and more. Refer to the provided specifications for detailed values.
FAQ
- Q: What is the maximum drain-source voltage supported by the IRFD9024 MOSFET?
- A : The maximum drain-source voltage is -60 V.
- Q: What is the typical on-resistance of the IRFD9024 MOSFET?
- A : The typical on-resistance is 5.4 ohms.
- Q: Can the IRFD9024 MOSFET be used in high-power applications?
- A: The MOSFET can handle power dissipation levels up to 1 W when properly heat sunk.
Power MOSFET
PRODUCT SUMMARY
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- P-channel
- Fast switching
- 175 °C operating temperature
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style that can be stacked in multiple combinations on standard 0.1″ pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) 
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. VDD = -25 V, starting TJ = 25 °C, L = 15 mH, Rg = 25 Ω, IAS = -3.2 A (see fig. 12)
- c. ISD ≤ -11 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
- d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 8 – Maximum Drain Current vs. Ambient Temperature
Note
- Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
Disclaimer
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References
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