VISHAY IRF9640S Power Mosfet User Guide

VISHAY IRF9640S Power Mosfet

Specifications

• Manufacturer: Vishay Siliconix
• Product Name: IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
• Type: Power MOSFET
• Package Types: I2PAK (TO-262), D2PAK (TO-263)
• Configuration: P-Channel MOSFET
• Drain-Source Voltage (VDS): -200V
• RDS(on): 7.1Ω
• Maximum Gate Charge (Qg max.): 27nC
• Gate-Source Charge (Qgs): 0.50nC
• Gate-Drain Charge (Qgd): Not specified

Description

The IRF9640S, SiHF9640S, IRF9640L, and SiHF9640L are power MOSFETs from Vishay Siliconix designed to offer fast switching, ruggedized device design, low on- resistance, and cost-effectiveness for various applications.

Features

• Surface-mount power package available in D2PAK (TO-263) and through-hole versions
• D2PAK (TO-263) provides high power capability and low on-resistance
• Suitable for high current applications with low internal connection resistance
• Can dissipate up to 2.0W in typical surface mount applications

Ordering Information

Various package options are available with lead-free and halogen-free choices for different applications.

Usage Instructions

1. Mounting: Ensure proper mounting of the MOSFET in the designated package type.
2. Connection: Connect the drain, source, and gate pins as per the circuit design requirements.
3. Operating Conditions: Operate within the specified voltage and current limits to prevent damage to the MOSFET.
4. Heat Dissipation: Consider heat dissipation requirements, especially in high-power applications.

Thermal Resistance Ratings

• Junction-to-Ambient: Max. 62°C/W
• Junction-to-Case (Drain): Max. 1.0°C/W

FAQ

• Q: What are the available package types for the IRF9640S, SiHF9640S, IRF9640L, and SiHF9640L?
  A: The MOSFETs are available in I2PAK (TO-262) and D2PAK (TO-263) packages.

• Q: Are the MOSFETs RoHS-compliant?
  A: The datasheet provides information on RoHS-compliant and non-RoHS- compliant parts. Lead (Pb) terminations indicate non-RoHS compliance.

• Q: What is the maximum power dissipation for the D2PAK package?
  A: The D2PAK package can dissipate up to 2.0W in a typical surface mount application.

FEATURES

• Surface-mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• P-channel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9640L, SiHF9640L) is available for low-profile applications.

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| -200
RDS(on) (W)| VGS = -10 V| 0.50
Qg max. (nC)| 44
Qgs (nC)| 7.1
Qgd (nC)| 27
Configuration| Single

ORDERING INFORMATION

ORDERING INFORMATION

Package| D2PAK (TO-263)| D2PAK (TO-263)| D2PAK (TO-263)| I2PAK (TO-262)
Lead (Pb)-free and Halogen-free| SiHF9640S-GE3| SIHF9640STRL-GE3| SIHF9640STRR-GE3| SiHF9640L-GE3
Lead (Pb)-free| IRF9640SPbF| IRF9640STRLPbF a| IRF9640STRRPbF a| IRF9640LPbF

Note
See device orientation

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| -200| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current| VGS at -10 V| TC = 25 °C| ID| -11|

A

TC = 100 °C| -6.8
Pulsed Drain Current a| IDM| -44
Linear Derating Factor|  | 1.0| W/°C
Linear Derating Factor (PCB mount) e| 0.025
Single Pulse Avalanche Energy b| EAS| 700| mJ
Avalanche Current a| IAR| -11| A
Repetitive Avalanche Energy a| EAR| 13| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 125| W
Maximum Power Dissipation (PCB mount) e| TA = 25 °C| 3.0
Peak Diode Recovery dV/d c| dV/dt| -5.0| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Soldering Recommendations (Peak temperature) d| for 10 s|  | 300

(TC = 25 °C, unless otherwise noted)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 Ω, IAS = -11 A (see fig. 12)
• ISD ≤ -11 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case
• When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62|

°C/W

Maximum Junction-to-Ambient (PCB mount) a| RthJA| –| 40
Maximum Junction-to-Case (Drain)| RthJC| –| 1.0

Note
When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = -250 μA| -200| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –| -0.20| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –| -4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = -200 V, VGS = 0 V| –| –| -100| μA
VDS = -160 V, VGS = 0 V, TJ = 125 °C| –| –| -500
Drain-Source On-State Resistance| RDS(on)| VGS = -10 V| ID = 6.6 A b| –| –| 0.50| W
Forward Transconductance| gfs| VDS = -50 V, ID = -6.6 A b| 4.1| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = -25 V,

f = 1.0 MHz, see fig. 5

| –| 1200| –|

pF

Output Capacitance| Coss| –| 370| –
Reverse Transfer Capacitance| Crss| –| 81| –
Total Gate Charge| Qg|

VGS = -10 V

|

ID = -11 A, VDS = -160 V,

see fig. 6 and 13 b

| –| –| 44|

nC

Gate-Source Charge| Qgs| –| –| 7.1
Gate-Drain Charge| Qgd| –| –| 27
Turn-On Delay Time| td(on)|

VDD = -100 V, ID = -11 A,

Rg = 9.1 W, RD = 8.6 W, see fig. 10 b

| –| 14| –|

ns

Rise Time| tr| –| 43| –
Turn-Off Delay Time| td(off)| –| 39| –
Fall Time| tf| –| 38| –
Internal Drain Inductance| LD| Between lead,                                 D

6 mm (0.25″) from

package and center of          G

die contact

| –| 4.5| –|

nH

Internal Source Inductance| LS| –| 7.5| –
Gate Input Resistance| Rg| f = 1 MHz, open drain| 0.3| –| 1.7| W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol

D

showing the

integral reverse

G

p -n junction diode

| –| –| -11|

A

Pulsed Diode Forward Current a| ISM| –| –| -44
Body Diode Voltage| VSD| TJ = 25 °C, IS = -11 A, VGS = 0 V b| –| –| -5.0| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs b| –| 250| 300| ns
Body Diode Reverse Recovery Charge| Qrr| –| 2.9| 3.6| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

TO-263AB

(HIGH VOLTAGE)

ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimetres (inches).
3. Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the utmost extremes of the plastic body at datum A.
4. Thermal PAD contour is optional within dimensions E, L1, D1 and E1.
5. Dimensions b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

I2PAK (TO-262) (HIGH VOLTAGE)

ECN: S-82442-Rev. A, 27-Oct-08 DWG: 5977

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions D and E do not include mould flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the utmost extremes of the plastic body.
3. Thermal pad contour is optional within dimensions E, L1, D1, and E1.
4. Dimensions b1 and c1 apply to base metal only.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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