VISHAY Si9933CDY Dual P Channel 20 V (D-S) MOSFET Owner’s Manual

VISHAY Si9933CDY Dual P Channel 20 V (D-S) MOSFET

Specifications

• Product: Si9933CDY
• Brand: Vishay Siliconix
• Type: Dual P-Channel MOSFET
• Package: SO-8
• Maximum Drain-Source Voltage (VDS): -20 V
• Maximum RDS(on) at VGS = -4.5 V: 0.058 Ω
• Maximum RDS(on) at VGS = -2.5 V: 0.094 Ω
• Typical Gate Charge (Qg): 8 nC
• Maximum Continuous Drain Current (ID): -4 A
• Configuration: Dual P-Channel

Product Usage Instructions

Features
For definitions of compliance, please see www.vishay.com/doc?99912

Applications

• P-Channel MOSFET applications

Ordering Information

Thermal Resistance Ratings

Frequently Asked Questions (FAQ)

Q: What is the maximum Drain-Source Voltage supported by the Si9933CDY?
A: The maximum Drain-Source Voltage (VDS) supported by the Si9933CDY is -20 V.

Q: What is the typical Gate Charge for the Si9933CDY?
A: The typical Gate Charge (Qg) for the Si9933CDY is 8 nC.

Q: Where can I find more technical information about the compliance definitions?
A: You can find more technical information about the compliance definitions at www.vishay.com/doc?99912.

Q: What is the configuration of the Si9933CDY?
A: The configuration of the Si9933CDY is Dual P-Channel.

Q: What is the lead-free package option for the Si9933CDY?
A: The lead-free package option for the Si9933CDY is Si9933CDY-T1-E3.

Q: What is the maximum Continuous Drain Current (ID) for the Si9933CDY?
A: The maximum Continuous Drain Current (ID) for the Si9933CDY is -4 A.

FEATURES

• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:

For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Load switch
• DC/DC converter

PRODUCT SUMMARY

VDS (V)| -20
RDS(on) max. (W) at VGS = -4.5 V| 0.058
RDS(on) max. (W) at VGS = -2.5 V| 0.094
Qg typ. (nC)| 8
ID (A) a, e| -4
Configuration| Dual
ORDERING INFORMATION

Package| SO-8
Lead (Pb)-free| Si9933CDY-T1-E3
Lead (Pb)-free and halogen-free| Si9933CDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -20| V
Gate-source voltage| VGS| ± 12

Continuous drain current (TJ = 150 °C)

| TC = 25 °C|

ID

| -4 e|

A

TC = 70 °C| -4 e
TA = 25 °C| -4 b, c, e
TA = 70 °C| -3.8 b, c
Pulsed drain current (10 μs pulse width)| IDM| -20
Source-drain current diode current| TC = 25 °C| IS| -2.5
TA = 25 °C| -1.7 b, c
Single pulse avalanche current| L = 0.1 mH| IAS| -6
Single-pulse avalanche energy| EAS| 1.8| mJ

Maximum power dissipation

| TC = 25 °C|

PD

| 3.1|

W

TC = 70 °C| 2
TA = 25 °C| 2 b, c
TA = 70 °C| 1.28 b, c
Operating junction and storage temperature range| TJ, Tstg| -50 to +150| °C
THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| LIMIT| UNIT

°C/W

TYPICAL| MAXIMUM
Maximum junction-to-ambient b, d| t £ 10 s| RthJA| 52| 62.5
Maximum junction-to-foot (drain)| Steady state| RthJF| 32| 40

Notes

• Based on TC = 25 °C
• Surface mounted on 1″ x 1″ FR4 board
• t = 10 s
• Maximum under steady state conditions is 110 °C/W
• Package limited

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.A| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -20| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = -250 μA| –| -19| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| –| 3.1| –
Gate threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -0.6| –| -1.4| V
Gate-body leakage| IGSS| VDS = 0 V, VGS = ± 12 V| –| –| -100| nA
Zero gate voltage drain current| IDSS| VDS = -20 V, VGS = 0 V| –| –| -1| μA
VDS = -20 V, VGS = 0 V, TJ = 55 °C| –| –| -10
On-state drain current b| ID(on)| VDS = £ -5 V, VGS = -10 V| -20| –| –| A
Drain-source on-state resistance b| RDS(on)| VGS = -4.5 V, ID = -4.8 A| –| 0.048| 0.058| W
VGS = -2.5 V, ID = -1 A| –| 0.075| 0.094
Forward transconductance b| gfs| VDS = -10 V, ID = -4.8 A| –| 11| –| S
Dynamic a
Input capacitance| Ciss|

VDS = -10 V, VGS = 0 V, f = 1 MHz

| –| 665| –|

pF

Output capacitance| Coss| –| 140| –
Reverse transfer capacitance| Crss| –| 115| –
Total gate charge| Qg| VDS = -10 V, VGS = -10 V, ID = -4.8 A| –| 17| 26|

nC

VDS = -10 V, VGS = -4.5 V, ID = -4.8 A

| –| 8| 12
Gate-source charge| Qgs| –| 2| –
Gate-drain charge| Qgd| –| 3| –
Gate resistance| Rg| f = 1 MHz| 1.2| 6| 12| W
Turn-on delay time| td(on)|

VDD = -10 V, RL = 2.6 W

ID @ -3.8 A, VGEN = -10 V, Rg = 1 W

| –| 6| 12|

ns

Rise time| tr| –| 15| 23
Turn-off delay time| td(off)| –| 26| 39
Fall time| tf| –| 9| 18
Turn-on delay time| td(on)|

VDD = -10 V, RL = 2.6 W

ID @ -3.8 A, VGEN = -4.5 V, Rg = 1 W

| –| 21| 32
Rise time| tr| –| 50| 75
Turn-off delay time| td(off)| –| 29| 44
Fall time| tf| –| 13| 20
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| -2.5| A
Pulse diode forward current a| ISM|  | –| –| -20
Body diode voltage| VSD| IS = -3.8 A| –| -0.77| -1.2| V
Body diode reverse recovery time| trr|

IF = -3.8 A, di/dt = 100 A/μs, TJ = 25 °C

| –| 30| 45| ns
Body diode reverse recovery charge| Qrr| –| 17| 26| nC
Reverse recovery fall time| ta| –| 16| –| ns
Reverse recovery rise time| tb| –| 14| –

Notes

• Guaranteed by design, not subject to production testing
• Pulse test; pulse width 300 μs, duty cycle 2 %

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Note

• The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit

SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012

DIM

| MILLIMETERS| INCHES
---|---|---
Min| Max| Min| Max
A| 1.35| 1.75| 0.053| 0.069
A1| 0.10| 0.20| 0.004| 0.008
B| 0.35| 0.51| 0.014| 0.020
C| 0.19| 0.25| 0.0075| 0.010
D| 4.80| 5.00| 0.189| 0.196
E| 3.80| 4.00| 0.150| 0.157
e| 1.27 BSC| 0.050 BSC
H| 5.80| 6.20| 0.228| 0.244
h| 0.25| 0.50| 0.010| 0.020
L| 0.50| 0.93| 0.020| 0.037
q| 0°| 8°| 0°| 8°
S| 0.44| 0.64| 0.018| 0.026
ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

RECOMMENDED MINIMUM PADS FOR SO-8

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein.

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience an d for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay o f any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

For technical questions, contact:
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• Vishay Intertechnology: Passives & Discrete Semiconductors

Read User Manual Online (PDF format)

Read User Manual Online (PDF format)  >>

Download This Manual (PDF format)

Download this manual  >>