VISHAY IRL510S Power Mosfet Owner’s Manual

VISHAY IRL510S Power Mosfet

Specifications

• Manufacturer: Vishay Siliconix
• Product: IRL510S, SiHL510S Power MOSFET
• Package: D2PAK (TO-263)
• Type: N-Channel MOSFET
• Maximum Drain-Source Voltage (VDS): 100V
• On-Resistance (RDS(on)): 6.1mΩ @ VGS = 5V
• Maximum Gate Charge (Qg): 3.3nC
• Gate-Source Charge (Qgs): 0.54nC
• Gate-Drain Charge (Qgd): 0.54nC

Product Description

The IRL510S and SiHL510S are N-Channel MOSFETs from Vishay that offer fast switching, rugged design, low on-resistance, and cost-effectiveness. The D2PAK (TO-263) package is designed to handle high power applications with low internal resistance, capable of dissipating up to 2.0W in surface-mount settings.

Usage Instructions

Mounting Instructions
Ensure proper orientation of the device as indicated in the datasheet. Mount the MOSFET securely on a suitable PCB material like FR-4 or G-10 for optimal thermal performance.

Electrical Connections
Connect the drain, gate, and source pins of the MOSFET according to your circuit requirements. Ensure appropriate voltage levels and current ratings are observed during operation.

Thermal Management
Monitor the operating temperature of the MOSFET to prevent overheating. Use appropriate heatsinking or cooling methods if necessary to maintain optimal performance.

Frequently Asked Questions (FAQ)

• Are the IRL510S and SiHL510S RoHS-compliant?
  The datasheet provides information on RoHS compliance for these products. Some parts may contain lead (Pb) terminations and are not RoHS-compliant.

• What is the maximum power dissipation of the D2PAK package?
  The D2PAK package can dissipate up to 2.0W in typical surface-mount applications.

FEATURES

• Surface-mount
• Available in tape and reel
• Dynamic dv/dt rating
• Repetitive avalanche rated
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V
• 175 °C operating temperature
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
  Note
  This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

ORDERING INFORMATION

Note
See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

A

TC = 100 °C| 4.0
Pulsed drain current a| IDM| 18
Linear derating factor|  | 0.29| W/°C
Linear derating factor (PCB mount) e| 0.025
Single pulse avalanche energy b| EAS| 100| mJ
Avalanche current a| IAR| 5.6| A
Repetitive avalanche energy a| EAR| 4.3| mJ
Maximum power dissipation| TC = 25 °C| PD| 43| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 3.7
Peak diode recovery dv/dt c| dv/dt| 5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s|  | 300

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12)
• ISD  5.6 A, di/dt  75 A/μs, VDD  VDS, TJ  175 °C
• 1.6 mm from case
• When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

°C/W

Maximum junction-to-ambient (PCB mount) a| RthJA| –| 40
Maximum junction-to-case (drain)| RthJC| –| 3.5

Note
When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0, ID = 250 μA| 100| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.12| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1.0| –| 2.0| V
Gate-source leakage| IGSS| VGS = ± 10 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 100 V, VGS = 0 V| –| –| 25| μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 5 V| ID = 3.4 A b| –| –| 0.54| W
VGS = 4 V| ID = 2.8 A b| –| –| 0.76
Forward transconductance| gfs| VDS = 50 V, ID = 3.4 A b| 1.9| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 250| –|

pF

Output capacitance| Coss| –| 80| –
Reverse transfer capacitance| Crss| –| 15| –
Total gate charge| Qg|

VGS = 5 V

|

ID = 5.6 A, VDS = 80 V,

see fig. 6 and 13 b

| –| –| 6.1|

nC

Gate-source charge| Qgs| –| –| 2.6
Gate-drain charge| Qgd| –| –| 3.3
Turn-on delay time| td(on)|

VDD = 50 V, ID = 5.6 A,

Rg = 12 W, RD = 8.4 W, see fig. 10 b

| –| 9.3| –|

ns

Rise time| tr| –| 47| –
Turn-off delay time| td(off)| –| 16| –
Fall time| tf| –| 18| –
Internal drain inductance| LD| Between lead,

6 mm (0.25″) from package and center of die contact

|

G

|

D

S

|  | –| 4.5| –|

nH

Internal source Inductance

|

LS

|

–

|

7.5

|

–

Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse

p – n junction diode

|

G

|  |

D

S

| –| –| 5.6|

A

Pulsed diode forward current a| ISM|

–

|

–

|

18

Body diode voltage| VSD| TJ = 25 °C, IS = 5.6 A, VGS = 0 V b| –| –| 2.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 5.6 A, di/dt = 100 A/μs b| –| 110| 130| ns
Body diode reverse recovery charge| Qrr| –| 0.50| 0.65| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width  300 μs; duty cycle  2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90380

TO-263AB (HIGH VOLTAGE)

ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

Disclaimer

• ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
• Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
• Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
• Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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