VISHAY IRFR024 Power Mosfet Discrete Semiconductor User Guide

June 17, 2024
VISHAY

VISHAY IRFR024 Power Mosfet Discrete Semiconductor

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
PRODUCT

Specifications:

  • Product Name: IRFR024, IRFU024, SiHFR024, SiHFU024
  • Manufacturer: Vishay Siliconix
  • Type : Power MOSFET
  • Package Type : DPAK (TO-252), IPAK (TO-251)
  • Channel Type : N-Channel MOSFET
  • Drain-Source Voltage (VDS ): 60V (VGS = 10V)
  • RDS(on): 25 ohms
  • Maximum Gate Charge (Qg): 11nC
  • Configuration: Single

Product Description

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface mount applications.

Ordering Information

Package : DPAK (TO-252)
Lead (Pb)-free and halogen-free : SiHFR024-GE3 IRFR024PbF
Lead (Pb)-free : SiHFR024TR-GE3 IRFR024TRPbFa

Thermal Resistance Ratings

  • Maximum Junction-to-Ambient: 110°C/W
  • Maximum Junction-to-Case (Drain): 3.0°C/W

Product Usage Instructions

  1. Mounting: The DPAK package is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version is suitable for through-hole mounting applications.
  2. Power Dissipation: Ensure that power dissipation levels do not exceed 1.5W in typical surface mount applications to prevent overheating.

FAQ

  • Q: What is the maximum drain-source voltage of the MOSFET?
    • A : The maximum drain-source voltage (VDS) is 60V when the gate-source voltage (VGS) is 10V.
  • Q: How should I mount the DPAK package?
    • A : The DPAK package can be mounted using vapor phase, infrared,or wave soldering techniques for surface mounting applications.
  • Q: What is the recommended power dissipation level?
    • A : Power dissipation levels up to 1.5W are possible in typical surface mount applications.

Power MOSFET

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG1

FEATURES

  • Dynamic dV/dt rating
  • Surface-mount (IRFR024, SiHFR024)
  • Straight lead (IRFU024, SiHFU024)
  • Available in tape and reel
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Material categorization: for definitions of compliance
  • please see www.vishay.com/doc?99912

PRODUCT SUMMARY

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

ORDERING INFORMATION

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG4

Notes

a. See device orientation
b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG5

Notes

  • a. Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
  • b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 Ω, IAS = 14 A (see fig. 12)
  • c. ISD ≤ 17 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
  • d. 1.6 mm from case
  • e. When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG6

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG7

Notes

  • a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
  • b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG8

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG9

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG10

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG11

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG12 VISHAY-IRFR024-Power-Mosfet-
Discrete-Semiconductor-FIG13

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91264.

VERSION 1: FACILITY CODE = Y

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG14

VERSION 2: FACILITY CODE = N

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG15

Case Outline for TO-251AA (High Voltage)

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG16

Notes

  • Dimensioning and tolerancing per ASME Y14.5M-1994
  • Dimensions are shown in inches and millimeters
  • Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
  • Thermal pad contour optional with dimensions b4, L2, E1 and D1
  • Lead dimension uncontrolled in L3
  • Dimension b1, b3 and c1 apply to base metal only
  • Outline conforms to JEDEC® outline TO-251AA

OPTION 2: FACILITY CODE = N

VISHAY-IRFR024-Power-Mosfet-Discrete-Semiconductor-
FIG17

Notes

  • Dimensioning and tolerancing per ASME Y14.5M-1994
  • All dimensions are in millimeters, angles are in degrees
  • Heat sink side flash is max. 0.8 mm

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for a particular purpose, non- infringement and merchantability.

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

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