VISHAY IRFR024 Power Mosfet Discrete Semiconductor User Guide
- June 17, 2024
- VISHAY
Table of Contents
VISHAY IRFR024 Power Mosfet Discrete Semiconductor
Specifications:
- Product Name: IRFR024, IRFU024, SiHFR024, SiHFU024
- Manufacturer: Vishay Siliconix
- Type : Power MOSFET
- Package Type : DPAK (TO-252), IPAK (TO-251)
- Channel Type : N-Channel MOSFET
- Drain-Source Voltage (VDS ): 60V (VGS = 10V)
- RDS(on): 25 ohms
- Maximum Gate Charge (Qg): 11nC
- Configuration: Single
Product Description
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
Ordering Information
Package : DPAK (TO-252)
Lead (Pb)-free and halogen-free : SiHFR024-GE3 IRFR024PbF
Lead (Pb)-free : SiHFR024TR-GE3 IRFR024TRPbFa
Thermal Resistance Ratings
- Maximum Junction-to-Ambient: 110°C/W
- Maximum Junction-to-Case (Drain): 3.0°C/W
Product Usage Instructions
- Mounting: The DPAK package is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version is suitable for through-hole mounting applications.
- Power Dissipation: Ensure that power dissipation levels do not exceed 1.5W in typical surface mount applications to prevent overheating.
FAQ
- Q: What is the maximum drain-source voltage of the MOSFET?
- A : The maximum drain-source voltage (VDS) is 60V when the gate-source voltage (VGS) is 10V.
- Q: How should I mount the DPAK package?
- A : The DPAK package can be mounted using vapor phase, infrared,or wave soldering techniques for surface mounting applications.
- Q: What is the recommended power dissipation level?
- A : Power dissipation levels up to 1.5W are possible in typical surface mount applications.
Power MOSFET
FEATURES
- Dynamic dV/dt rating
- Surface-mount (IRFR024, SiHFR024)
- Straight lead (IRFU024, SiHFU024)
- Available in tape and reel
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance
- please see www.vishay.com/doc?99912
PRODUCT SUMMARY
DESCRIPTION
Third-generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance,
and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU, SiHFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 W are
possible in typical surface mount applications.
ORDERING INFORMATION
Notes
a. See device orientation
b. “-BE3” denotes alternate manufacturing location
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
- b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 Ω, IAS = 14 A (see fig. 12)
- c. ISD ≤ 17 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- d. 1.6 mm from case
- e. When mounted on 1″ square PCB (FR-4 or G-10 material)
THERMAL RESISTANCE RATINGS
Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91264.
VERSION 1: FACILITY CODE = Y
VERSION 2: FACILITY CODE = N
Case Outline for TO-251AA (High Voltage)
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Dimensions are shown in inches and millimeters
- Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions b4, L2, E1 and D1
- Lead dimension uncontrolled in L3
- Dimension b1, b3 and c1 apply to base metal only
- Outline conforms to JEDEC® outline TO-251AA
OPTION 2: FACILITY CODE = N
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- All dimensions are in millimeters, angles are in degrees
- Heat sink side flash is max. 0.8 mm
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
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References
- Vishay Intertechnology: Passives & Discrete Semiconductors
- IRFR024, IRFU024, SiHFR024, SiHFU024 MOSFETs | Vishay