VISHAY IRFBG20 Discrete Semiconductor User Manual

VISHAY IRFBG20 Discrete Semiconductor

Specifications

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO- 220AB contribute to its wide acceptance throughout the industry.

Ordering Information

Package Lead (Pb)-free: IRFBG20PbF
Package Lead (Pb)-free and halogen-free: IRFBG20PbF-BE3

Thermal Resistance Ratings

Usage Instructions

Mounting Instructions

Mount the IRFBG20 Power MOSFET using a 6-32 or M3 screw with the recommended mounting torque. Ensure proper heat dissipation for optimal performance.

Electrical Connections

Connect the drain, gate, and source terminals as indicated in the product datasheet or markings on the component. Pay attention to polarity and voltage ratings during connection.

Operating Conditions

Operate the MOSFET within the specified voltage, current, and temperature ranges provided in the datasheet. Avoid exceeding the maximum ratings to prevent damage.

FAQ

Q: What is the maximum drain-source voltage supported by IRFBG20?

A: The IRFBG20 supports a maximum drain-source voltage of 1000V.

Q: Is IRFBG20 RoHS-compliant?

A: This datasheet provides information about parts that are RoHS-compliant and/or non RoHS-compliant. Please refer to the datasheet for specific details on compliance.

Q: What is the maximum power dissipation of IRFBG20?

A: The IRFBG20 can handle a maximum power dissipation of approximately 50W in commercial-industrial applications.

Q: How should I handle soldering of IRFBG20?

A: Follow the soldering recommendations provided in the datasheet, including peak temperature and duration for proper soldering of IRFBG20.

Power MOSFET

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 1000
RDS(on) (W)| VGS = 10 V| 11
Qg max. (nC)| 38
Qgs (nC)| 4.9
Qgd (nC)| 22
Configuration| Single

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRFBG20PbF
Lead (Pb)-free and halogen-free| IRFBG20PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 1000| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 1.4|

A

TC = 100 °C| 0.86
Pulsed drain current a| IDM| 5.6
Linear derating factor| | 0.43| W/°C
Single pulse avalanche energy b| EAS| 200| mJ
Repetitive avalanche current a| IAR| 1.4| A
Repetitive avalanche energy a| EAR| 5.4| mJ
Maximum power dissipation| TC = 25 °C| PD| 54| W
Peak diode recovery dV/dt c| dV/dt| 1.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. VDD = 50 V, starting TJ = 25 °C, L = 193 μH, Rg = 25 Ω, IAS = 1.4 A (see fig. 12)
• c. ISD ≤ 1.4 A, dI/dt ≤ 60 A/μs, VDD ≤ 600, TJ ≤ 150 °C
• d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 2.3

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)|
---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT|
Static| | | | | | | |
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 1000| –| –| V|
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 1.2| –| V/°C|
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V|
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA|
Zero gate voltage drain current| IDSS| VDS = 1000 V, VGS = 0 V| –| –| 100| μA|
VDS = 800 V, VGS = 0 V, TJ = 125 °C| –| –| 500|
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 0.84 A b| –| –| 11| W|
Forward transconductance| gfs| VDS = 50 V, ID = 0.84 A b| 1.0| –| –| S|
Dynamic| | | | | | | |
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 500| –|

pF

|
Output capacitance| Coss| –| 52| –|
Reverse transfer capacitance| Crss| –| 17| –|
Total gate charge| Qg|

VGS = 10 V

|

ID = 1.4 A, VDS = 400 V,

see fig. 6 and 13 b

| –| –| 38|

nC

|
Gate-source charge| Qgs| –| –| 4.9|
Gate-drain charge| Qgd| –| –| 22|
Turn-on delay time| td(on)|

VDD = 500 V, ID = 1.4 A,

Rg = 18 W, RD = 370 W, see fig. 10 b

| –| 9.4| –|

ns

|
Rise time| tr| –| 17| –|
Turn-off delay time| td(off)| –| 58| –|
Fall time| tf| –| 31| –|
Internal drain inductance| LD| Between lead,| |

D

S

| | –| 4.5| –| |
6 mm (0.25″) from package and center of die contact

|

G

| nH|
Internal source inductance| LS| –| 7.5| –|
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| –| 3.4| W|
Drain-Source Body Diode Characteristics|
Continuous source-drain diode current| IS| MOSFET symbol| | |

D

S

| –| –| 1.4| |
showing the integral reverse|

G

| A|
Pulsed diode forward current a| ISM| –| –| 5.6|
p – n junction diode

| | |
Body diode voltage| VSD| TJ = 25 °C, IS = 1.4 A, VGS = 0 V b| –| –| 1.5| V|
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/μs b| –| 130| 190| ns|
Body diode reverse recovery charge| Qrr| –| 0.46| 0.69| μC|
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)|

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91123.

Disclaimer

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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

• Revision: 01-Jan-2023
• Document Number: 91000
• For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFBG20 MOSFETs | Vishay

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