VISHAY IRF510 Power MOSFET Owner’s Manual

VISHAY IRF510 Power MOSFET

Product Information

• Specifications
  • Brand: Vishay Siliconix
  • Model: IRF510
  • Package Type: D TO-220AB
  • Channel Type: N-Channel MOSFET
  • Maximum Drain-Source Voltage (VDS): 100V
  • On-Resistance (RDS(on)): 8.3 Ohms
  • Gate Charge (Qg) max.: 3.8nC
• Description
  • The IRF510 is a power MOSFET designed by Vishay Siliconix, offering fast switching, ruggedized design, low on-resistance, and cost-effectiveness.
  • It comes in the TO-220AB package, suitable for various commercial-industrial applications with power dissipation levels up to approximately 50W.
• Features
  • Fast switching
  • Ruggedized device design
  • Low on-resistance
  • Cost-effectiveness

Product Usage Instructions

• To use the IRF510 MOSFET:
  • Ensure proper heat dissipation as per the thermal resistance ratings provided.
  • Connect the drain, gate, and source pins as required by your circuit.
  • Apply the appropriate gate-source voltage for the desired operation.
  • Refer to the datasheet for specific technical parameters when designing your circuit.
• Frequently Asked Questions (FAQ)
  • Q: What is the maximum drain-source voltage supported by IRF510?
  • A: The IRF510 supports a maximum drain-source voltage of 100V.
  • Q: What is the on-resistance of IRF510?
  • A: The on-resistance (RDS(on)) of IRF510 is 8.3 Ohms.
  • Q: Is the IRF510 suitable for high-power applications?
  • A: Yes, the IRF510 is suitable for applications with power dissipation levels up to approximately 50W.

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• 175 °C operating temperature

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912.

Note

• This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant.
• For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details.

DESCRIPTION

• Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
• The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
• The low thermal resistance and the low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

PRODUCT SUMMARY

VDS (V)| 100
RDS(on) (W)| VGS = 10 V| 0.54
Qg max. (nC)| 8.3
Qgs (nC)| 2.3
Qgd (nC)| 3.8
Configuration| Single
ORDERING INFORMATION INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF510PbF
Lead (Pb)-free and halogen-free| IRF510PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 100| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 5.6|

A

TC = 100 °C| 4.0
Pulsed drain current a| IDM| 20
Linear derating factor|  | 0.29| W/°C
Single pulse avalanche energy b| EAS| 75| MJ
Repetitive avalanche current a| IAR| 5.6| A
Repetitive avalanche energy a| EAR| 4.3| MJ
Maximum power dissipation| TC = 25 °C| PD| 43| W
Peak diode recovery dV/dt c| dV/dt| 5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s|  | 300
Mounting torque| 6-32 or M3 screw|  | 10| lbf · in
1.1| N · m

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, IAS = 5.6 A (see fig. 12)
• c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
• d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 3.5

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91015.

Disclaimer

• ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE.
• Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any liability for any errors, inaccuracies or incompleteness contained in any datasheet or any other disclosure relating to any product.
• Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) all liability arising out of the application or use of any product, (ii) any liability, including without limitation special, consequential or incidental damages, and (iii) any implied warranties, including warranties of fitness for a particular purpose, non-infringement and merchantability.
• Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
• Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
• Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
• Vishay disclaims all liability and bears no responsibility for the accuracy, legality or content of the third-party website or subsequent links.
• Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
• Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
• No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

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• THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
• THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000.
• © 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
• Downloaded from Arrow.com.
• Document Number: 91000
• Revision: 01-Jan-2024
• www.vishay.com.

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRF510 MOSFETs | Vishay

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