VISHAY IRFP22N60K Power MOSFET Owner’s Manual

VISHAY IRFP22N60K Power MOSFET

Product Information

Specifications:

• Brand: Vishay Siliconix
• Model: IRFP22N60K
• Type: Power MOSFET
• Package: TO-247AC
• Channel Type: N-Channel
• Drain-Source Voltage (VDS): 600V
• On-Resistance (RDS(on)): 0.24Ω
• Total Gate Charge (Qg max.): 45nC
• Gate-Source Charge (Qgs): 76nC
• Gate-Drain Charge (Qgd): 26nC

Product Usage Instructions

Installation:

1. Ensure the power supply is off and disconnected.
2. Identify the drain, gate, and source pins on the MOSFET.
3. Carefully insert the MOSFET into the circuit, following the correct orientation.
4. Securely mount the MOSFET to a heat sink for efficient heat dissipation.

Operation:

1. Apply a gate-source voltage of 10V to turn on the MOSFET.
2. Maintain the drain-source voltage within the specified range of 0V to 600V.
3. Avoid exceeding the maximum continuous drain current and pulsed drain current limits.

Maintenance:

1. Regularly check for any signs of overheating during operation.
2. Keep the MOSFET clean and free from dust and debris.

FAQs

• Q: Is the IRFP22N60K MOSFET RoHS compliant?
  A: The datasheet provides information on RoHS-compliant and non-RoHS-compliant parts. Please refer to the specific details in the datasheet for this information.

• Q: What is the maximum drain-source voltage for the IRFP22N60K?
  A: The maximum drain-source voltage (VDS) for the IRFP22N60K is 600V.

• Q: How should I handle the soldering of the IRFP22N60K?
  A: Follow the recommended peak temperature and duration for soldering provided in the datasheet, typically around 300°C for 10 seconds.

FEATURES

• Low gate charge Qg results in simple drive requirement
• Improved gate, avalanche and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche voltage and current
• Enhanced body diode dV/dt capability
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 600
RDS(on) (W)| VGS = 10 V| 0.24
Qg (max.) (nC)| 150
Qgs (nC)| 45
Qgd (nC)| 76
Configuration| Single

BENEFITS

• Hard switching primary or PFS switch
• Switch mode power supply (SMPS)
• Uninterruptable power supply
• High-speed power switching
• Motor drive

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

A

TC = 100 °C| 14
Pulsed drain current a|  |  | IDM| 88
Linear derating factor|  |  |  | 2.9| W/°C
Single pulse avalanche energy b|  |  | EAS| 380| mJ
Repetitive avalanche current a|  |  | IAR| 22| A
Repetitive avalanche energy a|  |  | EAR| 37| mJ
Maximum power dissipation| TC = 25 °C| PD| 370| W
Peak diode recovery dV/dt c|  |  | dV/dt| 15| V/ns
Operating junction and storage temperature range|  |  | TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| for 10 s|  | 300

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 Ω, IAS = 22 A (see fig. 12)
• ISD ≤ 22 A, dI/dt ≤ 360 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case

THERMAL RESISTANCE RATINGS

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.34

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA d| –| 0.30| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 3.0| –| 5.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 600 V, VGS = 0 V| –| –| 50| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 13 A b| –| 0.240| 0.280| W
Forward transconductance| gfs| VDS = 50 V, ID = 13 A b| 11| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 3570| –|

pF

Output capacitance| Coss| –| 350| –
Reverse transfer capacitance| Crss| –| 36| –
Output capacitance| Coss|

VGS = 0 V

| VDS = 1.0 V, f = 1.0 MHz| –| 4710| –
VDS = 480 V, f = 1.0 MHz| –| 92| –
Effective output capacitance| Coss eff.| VDS = 0 V to 480 V| –| 180| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 22 A, VDS = 480 V

see fig. 6 and 13 b

| –| –| 150|

nC

Gate-source charge| Qgs| –| –| 45
Gate-drain charge| Qgd| –| –| 76
Turn-on delay time| td(on)|

VDD = 300 V, ID = 22 A, Rg = 6.2, VGS = 10 V,

see fig. 10 b

| –| 26| –|

ns

Rise time| tr| –| 99| –
Turn-off delay time| td(off)| –| 48| –
Fall time| tf| –| 37| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol

D

showing the

integral reverse                     G

p – n junction diode

S

| –| –| 22|

A

Pulsed diode forward current a

|

ISM

|

–

|

–

|

88

Body diode voltage| VSD| TJ = 25 °C, IS = 22 A, VGS = 0 V b| –| –| 1.5| V
Body diode reverse recovery time| trr| TJ = 25 °C|

IF = 22 A,

dI/dt = 100 A/μs b

| –| 590| 890| ns
TJ = 125 °C| –| 670| 1010
Body diode reverse recovery charge| Qrr| TJ = 25 °C| –| 7.2| 11| μC
TJ =1 25 °C| –| 8.5| 13
Reverse recovery current| IRRM| TJ = 25 °C| –| 26| 39|
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %
• Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91208.

Package Information

TO-247AC (High Voltage)
VERSION 1 : FACILITY CODE = 9

 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
 |  |

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

• ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
• Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
• Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
• Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
• Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision : 01-Jan-2024
Document Number : 91000
For technical questions, contact:
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFP22N60K MOSFETs | Vishay

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