VISHAY IRF9Z24S Power MOSFET Owner’s Manual
- June 17, 2024
- VISHAY
Table of Contents
VISHAY IRF9Z24S Power MOSFET
Specifications
- Brand: Vishay Siliconix
- Product Name: IRF9Z24S, SiHF9Z24S Power MOSFET
- Drain-Source Voltage (VDS): -60V
- On-Resistance (RDS(on)): 5.4 Ohms
- Gate Charge (Qg max.): 11nC
- Gate-Source Charge (Qgs): 0.28nC
- Gate-Drain Charge (Qgd): Not specified
- Configuration: Single
- Package Type: D2PAK (TO-263)
- MOSFET Type: P-Channel
Description
- Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Ordering Information
- Packaging Options:
- D2PAK (TO-263) SiHF9Z24S-GE3 IRF9Z24SPbF
- D2PAK (TO-263) SiHF9Z24STRL-GE3 a IRF9Z24STRLPbF a
- D2PAK (TO-263) SiHF9Z24STRR-GE3 a IRF9Z24STRRPbF a
Thermal Resistance Ratings
- Junction-to-Ambient (PCB mount): Max. 40°C/W
- Junction-to-Case (Drain): Max. 2.5°C/W
FAQ
-
Q: What is the maximum Drain-Source Breakdown Voltage?
A: The maximum Drain-Source Breakdown Voltage is -60V. -
Q: What is the Gate-Source Threshold Voltage?
A: The Gate-Source Threshold Voltage is -4.0V. -
Q: Can this MOSFET dissipate high power?
A: Yes, the D2PAK package can dissipate up to 2.0W in a typical surface mount application. -
Q: Is this MOSFET RoHS-compliant?
A: The datasheet provides information on RoHS-compliance for specific parts. Please refer to the datasheet for details.
IRF9Z24S, SiHF9Z24S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)| – 60
RDS(on) (W)| VGS = – 10 V| 0.28
Qg max. (nC)| 19
Qgs (nC)| 5.4
Qgd (nC)| 11
Configuration| Single
FEATURES
- Advanced process technology
- Surface mount (IRF9Z24S, SiHF9Z24S)
- 175 °C operating temperature
- Fast switching
- P-channel
- Fully avalanche rated
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant.
- For example, parts with lead (Pb) terminations are not RoHS-compliant.
- Please see the information / tables in this datasheet for details.
DESCRIPTION
- Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package| D2PAK (TO-263)| D2PAK (TO-263)| D2PAK (TO-263)
Lead (Pb)-free and Halogen-free| SiHF9Z24S-GE3| SiHF9Z24STRL-GE3 a|
SiHF9Z24STRR-GE3 a
Lead (Pb)-free| IRF9Z24SPbF| IRF9Z24STRLPbF a| IRF9Z24STRRPbF a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| -60| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current e| VGS at -10 V| TC = 25 °C| ID| -11|
A
TC = 100 °C| -7.7
Pulsed Drain Current a, e| IDM| -44
Linear Derating Factor| | 0.40| W/°C
Single Pulse Avalanche Energy b, e| EAS| 240| mJ
Repetitive Avalanche Current a| IAR| -11| A
Repetitive Avalanche Energy a| EAR| 6.0| mJ
Maximum Power Dissipation| TA = 25 °C| PD| 3.7| W
TC = 25 °C| 60| W
Peak Diode Recovery dV/dt c, e| dV/dt| -4.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +175| °C
Soldering Recommendations (Peak temperature) d| for 10 s| | 300
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
- VDD = – 25 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = – 11 A (see fig. 12).
- ISD < – 11 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
- 1.6 mm from case.
- Uses IRF9Z24, SiHF9Z24 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient (PCB mount) a| RthJA| –| –| 40| °C/W
Maximum Junction-to-Case (Drain)| RthJC| –| –| 2.5
Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0, ID = -250 μA| -60| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA c| –|
-0.056| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –|
-4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = -60 V, VGS = 0 V| –| –| -100| μA
VDS = -48 V, VGS = 0 V, TJ = 150 °C| –| –| -500
Drain-Source On-State Resistance| RDS(on)| VGS = -10 V| ID = -6.6 A b| –| –|
0.28| W
Forward Transconductance| gfs| VDS = -25 V, ID = -6.6 A c| 1.4| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = – 25 V,
f = 1.0 MHz, see fig. 5 c
| –| 570| –|
pF
Output Capacitance| Coss| –| 360| –
Reverse Transfer Capacitance| Crss| –| 65| –
Total Gate Charge| Qg|
VGS = -10 V
|
ID = -11 A, VDS = -48 V,
see fig. 6 and 13 b, c
| –| –| 19|
nC
Gate-Source Charge| Qgs| –| –| 5.4
Gate-Drain Charge| Qgd| –| –| 11
Turn-On Delay Time| td(on)|
VDD = -30 V, ID = -11 A,
Rg = 18 W, RD = 2.5 W, see fig. 10 b
| –| 13| –|
ns
Rise Time| tr| –| 68| –
Turn-Off Delay Time| td(off)| –| 15| –
Fall Time| tf| –| 29| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol
showing the
integral reverse
p – n junction diode
| –| –| -11|
A
Pulsed Diode Forward Current a
|
ISM
|
–
|
–
|
-44
Body Diode Voltage| VSD| TJ = 25 °C, IS = -11 A, VGS = 0 V b| –| –| -6.3| V
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = -11 A, dI/dt = 100
A/μs b, c| –| 100| 200| ns
Body Diode Reverse Recovery Charge| Qrr| –| 320| 640| nC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
- Pulse width < 300 μs; duty cycle < 2 %.
- Uses IRF9Z24, SiHF9Z24 data and test conditions.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TO-263AB (HIGH VOLTAGE)
| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.|
MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D1| 6.86| –| 0.270| –
A1| 0.00| 0.25| 0.000| 0.010| E| 9.65| 10.67| 0.380| 0.420
b| 0.51| 0.99| 0.020| 0.039| E1| 6.22| –| 0.245| –
b1| 0.51| 0.89| 0.020| 0.035| e| 2.54 BSC| 0.100 BSC
b2| 1.14| 1.78| 0.045| 0.070| H| 14.61| 15.88| 0.575| 0.625
b3| 1.14| 1.73| 0.045| 0.068| L| 1.78| 2.79| 0.070| 0.110
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.066
c1| 0.38| 0.58| 0.015| 0.023| L2| –| 1.78| –| 0.070
c2| 1.14| 1.65| 0.045| 0.065| L3| 0.25 BSC| 0.010 BSC
D| 8.38| 9.65| 0.330| 0.380| L4| 4.78| 5.28| 0.188| 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994.
- Dimensions are shown in millimeters (inches).
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
- Thermal PAD contour optional within dimension E, L1, D1 and E1.
- Dimension b1 and c1 apply to base metal only.
- Datum A and B to be determined at datum plane H.
- Outline conforms to JEDEC outline to TO-263AB.
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
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References
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