VISHAY IRFR9024 Power MOSFET Owner’s Manual

VISHAY IRFR9024 Power MOSFET

Product Information

Specifications:

• Product Name: IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
• Manufacturer: Vishay Siliconix
• Product Type: Power MOSFET
• Package Type: DPAK (TO-252), IPAK (TO-251)
• Polarity: P-Channel MOSFET
• Drain-Source Voltage (VDS): -60V
• RDS(on): 5.4 Ohms
• Total Gate Charge (Qg Max.): 11nC
• Gate-Source Charge (Qgs): 0.28nC
• Gate-Drain Charge (Qgd): Not specified

Product Usage Instructions

Features:
The Vishay Siliconix power MOSFETs offer fast switching, ruggedized design, low on-resistance, and cost-effectiveness.

Description:
The DPAK is suitable for surface mounting using vapour phase, infrared, or wave soldering. The straight lead version is designed for through-hole mounting applications.

Ordering Information:
Refer to the user manual for specific part numbers and package details based on lead-free or leaded options.

Thermal Resistance Ratings:

• Maximum Junction-to-Ambient: 110°C/W
• Maximum Junction-to-Case (Drain): 50°C/W

Parameter Testing:

• Drain-Source Breakdown Voltage: -60V
• Gate-Source Threshold Voltage: -2.0V
• Zero Gate Voltage Drain Current: 2.9A

FAQ:

• Q: What are the recommended soldering techniques for DPAK?
  A: The DPAK can be surface mounted using vapour phase, infrared, or wave soldering methods.

• Q: What is the maximum power dissipation in typical surface-mount applications?
  A: Power dissipation levels up to 1.5W are achievable in typical surface-mount applications.

• Q: Are these MOSFETs lead-free and halogen-free?
  A: Yes, the DPAK package variants are lead-free and halogen-free.

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| -60
RDS(on) (Ω)| VGS = -10 V| 0.28
Qg (Max.) (nC)| 19
Qgs (nC)| 5.4
Qgd (nC)| 11
Configuration| Single

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR9024, SiHFR9024)
• Straight lead (IRFU9024, SiHFU9024)
• Available in tape and reel
• P-channel
• Fast switching
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912.

DESCRIPTION

• Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
• The DPAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.

ORDERING INFORMATION

ORDERING INFORMATION

Package| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| IPAK (TO-251)
Lead (Pb)-free and halogen-free| SiHFR9024-GE3| SiHFR9024TR-GE3 a| SiHFR9024TRL-GE3 a| SiHFR9024TRR-GE3 a| SiHFU9024-GE3
IRFR9024PbF-BE3| IRFR9024TRPbF-BE3| IRFR9024TRLPbF-BE3|  | –
Lead (Pb)-free| IRFR9024PbF| IRFR9024TRPbF a| IRFR9024TRLPbF a| –| IRFU9024PbF

Note

• See device orientation

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -60| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at -10 V| TC = 25 °C| ID| -8.8|

A

TC = 100 °C| -5.6
Pulsed drain current a| IDM| -35
Linear derating factor|  | 0.33| W/°C
Linear derating factor (PCB mount) e| 0.020
Single pulse avalanche energy b| EAS| 300| mJ
Repetitive avalanche current a| IAR| -8.8| A
Repetitive avalanche energy a| EAR| 5.0| mJ
Maximum power dissipation| TC = 25 °C| PD| 42| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.5
Peak diode recovery dV/dt c| dV/dt| -4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s|  | 260

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = – 25 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 Ω, IAS = – 8.8 A (see fig. 12)
• ISD ≤ – 11 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from the case
• When mounted on a 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| –| 110|

°C/W

Maximum junction-to-ambient (PCB mount) a| RthJA| –| –| 50
Maximum junction-to-case (drain)| RthJC| –| –| 3.0

Note

• When mounted on a 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| – 60| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| – 0.063| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| – 2.0| –| – 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA

Zero gate voltage drain current

| IDSS| VDS = – 60 V, VGS = 0 V| –| –| – 100|

μA

VDS = – 48 V, VGS = 0 V, TJ = 125 °C| –| –| – 500
Drain-source on-state resistance| RDS(on)| VGS = – 10 V| ID = – 5.3 Ab| –| –| 0.28| Ω
Forward transconductance| gfs| VDS = – 25 V, ID = – 5.3 A| 2.9| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = – 25 V, f = 1.0 MHz| –| 570| –|

pF

Output capacitance| Coss| –| 360| –
Reverse transfer capacitance| Crss| –| 65| –
Total gate charge| Qg|

VGS = – 10 V

|

ID = – 11 A, VDS = – 48 V,

See Fig. 6 and 13b

| –| –| 19|

nC

Gate-source charge| Qgs| –| –| 5.4
Gate-drain charge| Qgd| –| –| 11
Turn-on delay time| td(on)|

VDD = – 30 V, ID = – 11 A,

Rg = 18Ω, RD = 2.5Ω, see fig. 10b

| –| 13| –|

ns

Rise time| tr| –| 68| –
Turn-off delay time| td(off)| –| 15| –
Fall time| tf| –| 29| –
Internal drain inductance| LD| Between lead,

6 mm (0.25″) from the package and centre of the die contact

|

G

|

D

S

|  | –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse

p – n junction diode

| |  | | –| –| – 8.8|

A

Pulsed diode forward current a| ISM| –| –| – 35
Body diode voltage| VSD| TJ = 25 °C, IS = – 8.8 A, VGS = 0 Vb| –| –| – 6.3| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = – 11 A, dI/dt = 100 A/μsb| –| 100| 200| ns
Body diode reverse recovery charge| Qrr| –| 0.32| 0.64| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91278.

TO-252AA Case Outline

VERSION 1: FACILITY CODE = Y

Note

• Dimension L3 is for reference only

VERSION 2: FACILITY CODE = N

Notes

• Dimensioning and tolerance conform to ASME Y14.5M-1994
• All dimensions are in millimetres. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• The radius on the terminal is optional

Case Outline for TO-251AA (High Voltage)

OPTION 1:

ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimensions are shown in inches and millimetres
• Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions b4, L2, E1 and D1
• Lead dimension uncontrolled in L3
• Dimension b1, b3 and c1 apply to base metal only
• Outline conforms to JEDEC® outline TO-251AA

OPTION 2: FACILITY CODE = N

DIM.| MIN.| NOM.| MAX.|  | DIM.| MIN.| NOM.| MAX.
---|---|---|---|---|---|---|---|---
A| 2.180| 2.285| 2.390| D2| 5.380| –| –
A1| 0.890| 1.015| 1.140| E| 6.350| 6.540| 6.730
b| 0.640| 0.765| 0.890| E1| 4.32| –| –
b1| 0.640| 0.715| 0.790| e| 2.29 BSC|
b2| 0.760| 0.950| 1.140| L| 8.890| 9.270| 9.650
b3| 0.760| 0.900| 1.040| L1| 1.910| 2.100| 2.290
b4| 4.950| 5.205| 5.460| L2| 0.890| 1.080| 1.270
c| 0.460| –| 0.610| L3| 1.140| 1.330| 1.520
c1| 0.410| –| 0.560| L4| 1.300| 1.400| 1.500
c2| 0.460| –| 0.610| q1| 0°| 7.5°| 15°
D| 5.970| 6.095| 6.220| q2| 4°| –| –
D1| 4.300| –| –|
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• All dimensions are in millimetres, angles are in degrees
• Heat sink side flash is max. 0.8 mm

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 MOSFETs | Vishay

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