VISHAY 2N7002K-T1-E3 N-Channel 60 V D-S MOSFET Instruction Manual

2N7002K
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
www.vishay.com

2N7002K-T1-E3 N-Channel 60 V D-S MOSFET

Marking code: 7K

PRODUCT SUMMARY

VDS (V)| 60
RDS(on) max. (W) at VGS = 10 V| 2
Qg typ. (nC)| 0.4
ID (A)| 0.3
Configuration| Single

FEATURES

• Low on-resistance: 2 Ω
• Low threshold: 2 V (typ.)
• Low input capacitance: 25 pF
• Fast switching speed: 25 ns
• Low input and output leakage
• TrenchFET® power MOSFET
• 2000 V ESD protection
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provi des information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
  Please see the information / tables in this datasheet for details

BENEFITS

• Low offset voltage
• Low voltage operation
• Easily driven without buffer
• High speed circuits
• Low error voltage

APPLICATIONS

• Direct logic-level interface: TTL/CMOS
• Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc.
• Battery operated systems
• Solid state relays

ORDERING INFORMATION

Package| SOT-23
Lead (Pb)-free| 2N7002K-T1-E3
Lead (Pb)-free and halogen-free| 2N7002K-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 20
Continuous drain current (TJ = 150 °C) b| TA = 25 °C| ID| 0.3|

A

TA = 100 °C| 0.19
Pulsed drain current a| IDM| 0.8
Power dissipation b| TA = 25 °C| PD| 0.35| W
TA = 100 °C| 0.14
Maximum junction-to-ambient b| RthJA| 350| °C/W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP. a| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 10 μA| 60| –| –| V
Gate-threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1| –| 2.5
Gate-body leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 10| μA
VDS = 0 V, VGS = ± 15 V| –| –| 1
VDS = 0 V, VGS = ± 10 V| –| –| ± 150|

nA

VDS = 0 V, VGS = ± 10 V, TJ = 85 °C| –| –| ± 1000
VDS = 0 V, VGS = ± 5 V| –| –| ± 100
Zero gate voltage drain current| IDSS| VDS = 60 V, VGS = 0 V| –| –| 1| μA
VDS = 60 V, VGS = 0 V, TJ = 125 °C| –| –| 500
On-state drain current b| ID(on)| VGS = 10 V, VDS = 7.5 V| 800| –| –| mA
VGS = 4.5 V, VDS = 10 V| 500| –| –
Drain-source on-resistance b| RDS(on)| VGS = 10 V, ID = 500 mA| –| –| 2| W
VGS = 4.5 V, ID = 200 mA| –| –| 4
Forward transconductance b| gfs| VDS = 10 V, ID = 200 mA| 100| –| –| mS
Diode forward voltage| VSD| IS = 200 mA, VGS = 0 V| –| –| 1.3| V
Dynamic a, b
Total gate charge| Qg| VDS = 10 V, VGS = 4.5 V ID @ 250 mA| –| 0.4| 0.6| nC
Input capacitance| Ciss| VDS = 25 V, VGS = 0 V
f = 1 MHz| –| 30| –|

pF

Output capacitance| Coss| –| 6| –
Reverse transfer capacitance| Crss| –| 2.5| –
Switching a, c
Turn-on time| td(on)| VDD = 30 V, RL = 150 W
ID @ 200 mA, VGEN = 10 V, Rg = 10 W| –| –| 25| ns
Turn-off time| td(off)| –| –| 35

Notes
a. For DESIGN AID ONLY, not subject to production testing
b. Pulse test: pulse width ≤ 300 μs duty cycle ≤ 2 %
c. Switching time is essentially independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71333.

Package Information

SOT-23 (TO-236): 3-LEAD

ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

Application Note 826

RECOMMENDED MINIMUM PADS FOR SOT-23

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Revision: 01-Jan-2024
Document Number: 91000
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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• 2N7002K MOSFETs | Vishay

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