VISHAY IRFP460B D Series Power MOSFET User Manual

VISHAY IRFP460B D Series Power MOSFET

Product Information

• The IRFP460B and SiHG460B are D Series Power MOSFETs manufactured by Vishay Siliconix. These MOSFETs are N-Channel devices designed for high voltage applications.
• The IRFP460B has a drain-source voltage (VDS) rating of 550 V and a gate-source voltage (VGS) rating of 10 V. It comes in a TO-247AC package with lead (Pb)-free and halogen-free options.
• The SiHG460B has the same specifications as the IRFP460B and is also available in a TO-247AC package.

Specifications

Product Usage Instructions

Installation

1. Ensure that the power supply is turned off and disconnected before installation.
2. Select an appropriate heat sink for the MOSFET to dissipate heat effectively.
3. Mount the MOSFET securely on the heat sink using thermal paste or a thermal pad.
4. Connect the drain, gate, and source pins of the MOSFET to the appropriate circuitry according to your application requirements.
5. Double-check all connections and ensure that there are no short circuits before applying power.

Operation

Once the MOSFET is properly installed, follow these guidelines for its operation:

• Ensure that the gate-source voltage (VGS) does not exceed the specified maximum value of 10 V.
• Maintain the drain-source voltage (VDS) within the specified range of up to 550 V.
• Do not exceed the maximum pulsed drain current (ID) rating of 170 A.
• Monitor the temperature of the MOSFET during operation and ensure it stays within the specified operating temperature range of -55 to +150 °C.

FAQ

Q: Are the IRFP460B and SiHG460B lead (Pb)-free?

A: Yes, both models are available in lead (Pb)-free options. The IRFP460B is also available in a lead (Pb)-free and halogen-free version.

Q: What is the maximum power dissipation of the MOSFET?

A: The maximum power dissipation (PD) is 300 W.

Q: Can I use these MOSFETs in high voltage applications?

A: Yes, these MOSFETs are designed for high voltage applications with a drain- source voltage (VDS) rating of 550 V.

Q: What is the recommended operating temperature range for the MOSFET?

A: The recommended operating temperature range is -55 to +150 °C.

D Series Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max.| 550
RDS(on) max. at 25 °C (W)| VGS = 10 V| 0.25
Qg max. (nC)| 170
Qgs (nC)| 14
Qgd (nC)| 28
Configuration| Single

FEATURES

• Optimal Design

  • Low Area Specific On-Resistance
  • Low Input Capacitance
  • Reduced Capacitive Switching Losses
  • High Body Diode Ruggedness
  • Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

  • Low Cost
  • Simple Gate Drive Circuitry
  • Low Figure-of-Merit (FOM):
  •  Fast Switching

• Material categorization: For definitions of compliance
  please see www.vishay.com/doc?99912

• Note

• Lead (Pb)-containing terminations are not RoHS-compliant.
  Exemptions may apply.

APPLICATIONS

• Consumer Electronics
  Displays (LCD or Plasma TV)

• Server and Telecom Power Supplies
  SMPS

• Industrial

  • Welding
  • Induction Heating
  • Motor Drives

• Battery Chargers

• SMPS
  Power Factor Correction (PFC)

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFP460BPbF
Lead (Pb)-free and Halogen-free| SiHG460B-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 500|

V

Gate-Source Voltage| VGS| ± 20
Gate-Source Voltage AC (f > 1 Hz)| 30
Continuous Drain Current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 20|

A

TC = 100 °C| 13
Pulsed Drain Currenta| IDM| 62
Linear Derating Factor|  | 2.2| W/°C
Single Pulse Avalanche Energyb| EAS| 281| mJ
Maximum Power Dissipation| PD| 278| W
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 150| °C
Drain-Source Voltage Slope| TJ = 125 °C| dV/dt| 24| V/ns
Reverse Diode dV/dtd| 0.36
Soldering Recommendations (Peak Temperature)| for 10 s|  | 300c| °C

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature.
• b. VDD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A.
• c. 1.6 mm from case.
• d. ISD  ID, starting TJ = 25 °C.

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 40| °C/W
Maximum Junction-to-Case (Drain)| RthJC| –| 0.45
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 250 μA| –| 0.56| –| V/°C
Gate-Source Threshold Voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 2| –| 4| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 1| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 10
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 10 A| –| 0.2| 0.25| W
Forward Transconductance| gfs| VDS = 50 V, ID = 10 A| –| 12| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 100 V,

f = 1 MHz

| –| 3094| –|

pF

Output Capacitance| Coss| –| 152| –
Reverse Transfer Capacitance| Crss| –| 13| –
Effective output capacitance, energy relateda| Co(er)|

VGS = 0 V, VDS = 0 V to 400 V

| –| 131| –
Effective output capacitance, time relatedb| Co(tr)| –| 189| –
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 10 A, VDS = 400 V

| –| 85| 170|

nC

Gate-Source Charge| Qgs| –| 14| –
Gate-Drain Charge| Qgd| –| 28| –
Turn-On Delay Time| td(on)|

VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 9.1 W

| –| 24| 50|

ns

Rise Time| tr| –| 31| 62
Turn-Off Delay Time| td(off)| –| 117| 176
Fall Time| tf| –| 56| 112
Gate Input Resistance| Rg| f = 1 MHz, open drain| –| 1.8| –| W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the

integral reverse p – n junction diode

| –| –| 20|

A

Pulsed Diode Forward Current| ISM| –| –| 80
Diode Forward Voltage| VSD| TJ = 25 °C, IS = 10 A, VGS = 0 V| –| –| 1.2| V
Reverse Recovery Time| trr|

TJ = 25 °C, IF = IS = 10 A,

dI/dt = 100 A/μs, VR = 20 V

| –| 437| –| ns
Reverse Recovery Charge| Qrr| –| 5.9| –| μC
Reverse Recovery Current| IRRM| –| 25| –| A

Notes

• a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
• b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
 |  |

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

• ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

• Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

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• Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein.
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For technical questions, contact: hvm@vishay.com

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFP460B, SiHG460B MOSFETs | Vishay

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