VISHAY IRF9640 Channel MOSFET Transistor Instructions

: June 17, 2024
: VISHAY

Table of Contents

VISHAY IRF9640 Channel MOSFET Transistor
FEATURES
SPECIFICATIONS
TYPICAL CHARACTERISTICS
References
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VISHAY IRF9640 Channel MOSFET Transistor

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
P-channel
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

PRODUCT SUMMARY

Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details

DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF9640PbF
Lead (Pb)-free and halogen-free| IRF9640PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -200| V
Gate-source voltage| VGS| ± 20| V
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| -11|

A

TC = 100 °C| -6.8
Pulsed drain current a| IDM| -44
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 700| mJ
Repetitive avalanche current a| IAR| -11| A
Repetitive avalanche energy a| EAR| 13| mJ
Maximum power dissipation| TC = 25 °C| PD| 125| W
Peak diode recovery dV/dt c| dV/dt| -5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 Ω, IAS = -11 A (see fig. 12)
ISD ≤ -11 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -200| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –| -0.2| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –| -4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -200 V, VGS = 0 V| –| –| -100| μA
VDS = -160 V, VGS = 0 V, TJ = 125 °C| –| –| -500
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = -6.6 A b| –| –| 0.50| W
Forward transconductance| gfs| VDS = -50 V, ID = -6.6 A b| 4.1| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = -25 V,

f = 1.0 MHz, see fig. 5

| –| 1200| –|

pF

Output capacitance| Coss| –| 370| –
Reverse transfer capacitance| Crss| –| 81| –
Total gate charge| Qg|

VGS = -10 V

|

ID = -11 A, VDS = -160 V,

see fig. 6 and 13 b

| –| –| 44|

nC

Gate-source charge| Qgs| –| –| 7.1
Gate-drain charge| Qgd| –| –| 27
Turn-on delay time| td(on)|

VDD = -100 V, ID = -11 A

Rg = 9.1 W, RD = 8.6 W, see fig. 10 b

| –| 14| –|

ns

Rise time| tr| –| 43| –
Turn-off delay time| td(off)| –| 39| –
Fall time| tf| –| 38| –
Gate input resistance| LD| | –| 4.5| –|

nH

Internal drain inductance| LS| –| 7.5| –
Internal source inductance| Rg| f = 1 MHz, open drain| 0.3| –| 1.7| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| | –| –| -11|

A

Pulsed diode forward current a| ISM| –| –| -44
Body diode voltage| VSD| TJ = 25 °C, IS = -11 A, VGS = 0 V b| –| –| -5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs b| –| 250| 300| ns
Body diode reverse recovery charge| Qrr| –| 2.9| 3.6| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91086.

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