VISHAY IRF540 N-Channel Power MOSFET Instructions

: June 16, 2024
: VISHAY

Table of Contents

Power MOSFET
FEATURES
DESCRIPTION
Legal Disclaimer Notice
References
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IRF540
Vishay Siliconix

Power MOSFET

VISHAY IRF540 N-Channel Power MOSFET

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

Thi s datasheet provi des i nformation about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF540PbF
Lead (Pb)-free and halogen-free| IRF540PbF-BE3

ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 100| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 28| A
TC = 100 °C| 20
Pulsed drain current a| IDM| 110
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 230| mJ
Repetitive avalanche current a| IAR| 28| A
Repetitive avalanche energy a| EAR| 15| mJ
Maximum power dissipation| TC = 25 °C| PD| 150| W
Peak diode recovery dV/dt c| dV/dt| 5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, R g = 25 Ω, I = 28 A (see fig. 12)
c. ISD≤ 28 A, dI/dt ≤ 170 A/μs, VDD ≤ V ≤ 175 °C
d. 1.6 mm from case DS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 100| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.13| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 100 V, VGS = 0 V| –| –| 25| μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 17 A b| –| –| 0.077| L
Forward transconductance| gfs| VDS = 50 V, ID = 17 A b| 8.7| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1700| –| pF
Output capacitance| Coss| –| 560| –
Reverse transfer capacitance| Crss| –| 120| –
Total gate charge| Qg| VGS = 10 V| ID = 17 A, VDS = 80 V,

see fig. 6 and 13 b

| –| –| 72| nC
Gate-source charge| Qgs| –| –| 11
Gate-drain charge| Qgd| –| –| 32
Turn-on delay time| td(on)| VDD = 50 V, ID = 17 A
Rg = 9.1 L, RD = 2.9 L, see fig. 10 b| –| 11| –| ns
Rise time| tr| –| 44| –
Turn-off delay time| td(off)| –| 53| –
Fall time| tf| –| 43| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.5| –| 3.6| L
Internal drain inductance| LD| Between lead,6 mm (0.25″) from package and center of die contact | –| 4.5| –| nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse
p – n junction diode | –| –| 28| A
Pulsed diode forward current a| ISM| –| –| 110
Body diode voltage| VSD| TJ = 25 °C, IS = 28 A, VGS = 0 V b| –| –| 2.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b| –| 180| 360| ns
Body diode reverse recovery charge| Qrr| –| 1.3| 2.8| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VISHAY IRF540 N-Channel Power MOSFET - Fig 3 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91021.

Legal Disclaimer Notice

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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