VISHAY IRFP460HPBF Power MOSFET Owner’s Manual

VISHAY IRFP460HPBF Power MOSFET

Product Usage Instructions

Drain-Source Voltage and Gate-Source Voltage

The drain-source voltage (VDS) and gate-source voltage (VGS) are important parameters for the proper operation of the IRFP460HPBF MOSFET. The VDS should not exceed 550 V when the VGS is 10 V.

Maximum Power Dissipation

The maximum power dissipation of the IRFP460HPBF is 0.234 W. Ensure that the power dissipation does not exceed this value to prevent damage to the MOSFET.

Operating Temperature Range

The IRFP460HPBF can operate within a temperature range of -55°C to +150°C. It is important to keep the MOSFET within this temperature range to ensure proper functionality and prevent overheating.

Thermal Resistance

The thermal resistance of the IRFP460HPBF is rated at 40°C/W for junction-to- ambient and 0.45°C/W for junction-to-case (drain). These ratings determine the ability of the MOSFET to dissipate heat. Ensure proper heat sinking and cooling to maintain the MOSFET within acceptable temperature limits.

Soldering Recommendations

During soldering, it is recommended to maintain a peak temperature of 260°C for a maximum duration of 10 seconds. Exceeding this temperature or duration may damage the MOSFET.

Specifications

Frequently Asked Questions (FAQ)

• Q: What is the maximum drain-source voltage for the IRFP460HPBF?
• A: The maximum drain-source voltage (VDS) for the IRFP460HPBF is 550 V when the gate-source voltage (VGS) is 10 V.
• Q: What is the recommended soldering temperature for the IRFP460HPBF?
• A: It is recommended to maintain a peak soldering temperature of 260°C for a maximum duration of 10 seconds.
• Q: What is the operating temperature range for the IRFP460HPBF?
• A: The IRFP460HPBF can operate within a temperature range of -55°C to +150°C.
• Q: What is the thermal resistance of the IRFP460HPBF?
• A: The thermal resistance is rated at 40°C/W for junction-to-ambient and 0.45°C/W for junction-to-case (drain).

FEATURES

• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912.

APPLICATIONS

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
  • High-intensity discharge (HID)
  • Fluorescent ballast lighting
• Industrial
  • Welding
  • Induction heating
  • Motor drives
  • Battery chargers
    Solar (PV inverters)

PRODUCT SUMMARY

VDS (V) at TJ max.| 550
RDS(on) typ. ( ) at 25 °C| VGS = 10 V| 0.234
Qg max. (nC)| 116
Qgs (nC)| 22
Qgd (nC)| 35
Configuration| Single
ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free and halogen-free| IRFP460HPBF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 20|

A

TC = 100 °C| 13
Pulsed drain current a| IDM| 54
Linear derating factor|  | 2.6| W/°C
Single pulse avalanche energy b| EAS| 621| MJ
Maximum power dissipation| PD| 329| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| DV/dt| 66| V/ns
Reverse diode dv/dt d| 0.5
Soldering recommendations (peak temperature) c| For 10 s|  | 260| °C

Notes

• Repetitive rating; pulse width limited by maximum junction temperature
• VDD = 120 V, starting TJ = 25 °C, L = 4.3 mH, Rg = 25 , IAS = 17 A
• 1.6 mm from the case
• ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.45
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.56| –| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 1| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 100
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 12 A| –| 0.234| 0.270| W
Forward transconductance a| gfs| VDS = 10 V, ID = 12 A| –| 9.6| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V,

f = 1 MHz

| –| 3208| –|

pF

Output capacitance| Coss| –| 163| –
Reverse transfer capacitance| Cross| –| 17| –
Effective output capacitance, energy-related a| Co(er)|

VDS = 0 V to 480 V, VGS = 0 V

| –| 114| –
Effective output capacitance, time-related b| Co(tr)| –| 206| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 12 A, VDS = 400 V

| –| 77| 116|

nC

Gate-source charge| Qgs| –| 22| –
Gate-drain charge| Qgd| –| 35| –
Turn-on delay time| td(on)|

VDD = 400 V, ID = 12 A, VGS = 10 V, Rg = 9.1 W

| –| 29| 58|

ns

Rise time| tr| –| 60| 90
Turn-off delay time| td(off)| –| 67| 101
Fall time| tf| –| 47| 94
Gate input resistance| Rg| f = 1 MHz, open drain| 0.37| 0.75| 1.5| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol

showing the integral reverse                   p – n junction diode

| –| –| 22|

A

Pulsed diode forward current| ISM| –| –| 54
Diode forward voltage| VSD| TJ = 25 °C, IS = 12 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr|

TJ = 25 °C, IF = IS = 12 A,

di/dt = 100 A/μs, VR = 25 V

| –| 384| 768| ns
Reverse recovery charge| Qrr| –| 5.1| 10.2| μC
Reverse recovery current| IRRM| –| 26| –| A

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92440.

Package Information

TO-247AC (High Voltage)

 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimensions D and E do not include mould flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total above b2 and b4 dimension at the maximum material condition.

 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
 |  |

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 except for dimension c

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

• ALL PRODUCTS, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE.
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CONTACT

• For technical questions, contact: hvm@vishay.com.
• THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
• ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000.
• www.vishay.com.

References

• applications.no

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