VISHAY SiSHA18ADN N-Channel 30 V (D-S) MOSFET Owner’s Manual
- June 16, 2024
- VISHAY
Table of Contents
VISHAY SiSHA18ADN N-Channel 30 V (D-S) MOSFET
Product Information
Specifications
- Manufacturer: Vishay Siliconix
- Product Name: SiSHA18ADN
- Type: N-Channel MOSFET
- Drain-Source Voltage (VDS): 30 V
- Maximum Drain-Source On-State Resistance (RDS(on)): 0.0046 Ω at VGS = 10 V, 0.007 Ω at VGS = 4.5 V
- Typical Gate Charge (Qg): 60 nC
- Maximum Continuous Drain Current (ID): 9.8 A
- Configuration: Single
Features
- Lead (Pb)-free and halogen-free package
- PowerPAK 1212-8SH package type
- Low on-state resistance for efficient power handling
Applications
- N-Channel MOSFET applications
Ordering Information
- Package: PowerPAK 1212-8SH
- Part Number: SiSHA18ADN-T1-GE3
Thermal Resistance Ratings
- Maximum Junction-to-Ambient: 28°C/W
- Maximum Junction-to-Case (Drain): 3.8°C/W (steady state), 4.7°C/W (t = 10 s)
Parameter Testing Conditions
Please refer to the user manual for detailed information on parameter
testing conditions.
Product Usage Instructions
Installation
- Ensure that the power supply is turned off and disconnected.
- Select the appropriate package type and verify compatibility with your application.
- Carefully insert the SiSHA18ADN MOSFET into the designated slot or socket, aligning the pins correctly.
- Ensure a secure fit and connection.
- Connect the necessary input and output terminals according to your application requirements.
Operation
- Ensure that the power supply is within the specified voltage range.
- Apply an appropriate gate voltage (VGS) to control the MOSFET’s switching behavior.
- Monitor the drain current (ID) to ensure it stays within the maximum continuous drain current rating.
- Observe the temperature of the MOSFET during operation to prevent overheating.
Maintenance
No specific maintenance is required for the SiSHA18ADN MOSFET. However,
regular inspection of connections and cooling systems is recommended to ensure
optimal performance and prevent any potential issues.
Safety Precautions
- Always follow proper electrical safety procedures when working with the MOSFET or any associated equipment.
- Avoid exceeding the maximum ratings specified in the user manual to prevent damage or hazards.
- Ensure that the MOSFET is properly cooled to prevent overheating.
FAQ
-
Q: What is the maximum drain-source voltage (VDS) of the SiSHA18ADN MOSFET?
A: The maximum drain-source voltage (VDS) is 30 V. -
Q: What is the maximum continuous drain current (ID) of the SiSHA18ADN MOSFET?
A: The maximum continuous drain current (ID) is 9.8 A. -
Q: What is the package type of the SiSHA18ADN MOSFET?
A: The package type is PowerPAK 1212-8SH. -
Q: Is the SiSHA18ADN MOSFET lead (Pb)-free and halogen-free?
A: Yes, the SiSHA18ADN MOSFET is lead (Pb)-free and halogen-free. -
Q: Where can I find more information about compliance definitions?
A: You can find more information about compliance definitions at www.vishay.com/doc?99912.
FEATURES
- TrenchFET® Gen IV power MOSFET
- 100 % Rg and UIS tested
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- High power density DC/DC
- Synchronous rectification
- VRMs and embedded DC/DC
PRODUCT SUMMARY
| VDS (V) | 30 |
|---|---|
| RDS(on) max. (W) at VGS = 10 V | 0.0046 |
| RDS(on) max. (W) at VGS = 4.5 V | 0.007 |
| Qg typ. (nC) | 9.8 |
| ID (A) | 60 a |
| Configuration | Single |
ORDERING INFORMATION
| Package | PowerPAK 1212-8SH |
|---|---|
| Lead (Pb)-free and halogen-free | SiSHA18ADN-T1-GE3 |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 30| V
Gate-source voltage| VGS| +20, -16
Continuous drain current (TJ = 150 °C)| TC = 25 °C| ID| 60| A
TC = 70 °C| 48
TA = 25 °C| 22 b, c
TA = 70 °C| 17.6 b, c
Pulsed drain current (t = 300 μs)| IDM| 200
Continuous source-drain diode current| TC = 25 °C| IS| 22
TA = 25 °C| 3 b, c
Single pulse avalanche current| L = 0.1 mH| IAS| 15
Single pulse avalanche energy| EAS| 11.25| mJ
Maximum power dissipation| TC = 25 °C| PD| 26.5| W
TC = 70 °C| 17
TA = 25 °C| 3.5 b, c
TA = 70 °C| 2.3 b, c
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d, e| | 260
THERMAL RESISTANCE RATINGS
| PARAMETER | SYMBOL | TYPICAL | MAXIMUM | UNIT |
|---|---|---|---|---|
| Maximum junction-to-ambient b, f | t £ 10 s | RthJA | 28 | 35 |
| Maximum junction-to-case (drain) | Steady state | RthJC | 3.8 | 4.7 |
Notes
- a. Based on TC = 25 °C
- b. Surface mounted on 1″ x 1″ FR4 board
- c. t = 10 s
- d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom-side solder interconnection.
- e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
- f. Maximum under steady state conditions is 81 °C/W.
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 30| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = 10 mA| –| 21| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| ID = 250 μA| –| -4.6| –
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1| –| 2.5| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = +20, -16 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 30 V, VGS = 0 V| –| –| 1| μA
VDS = 30 V, VGS = 0 V, TJ = 55 °C| –| –| 10
Drain-source on-state resistance a| RDS(on)| VGS = 10 V, ID = 10 A| –| 0.0036|
0.0046| W
VGS = 4.5 V, ID = 10 A| –| 0.0049| 0.007
Forward transconductance a| gfs| VDS = 10 V, ID = 10 A| –| 48| –| S
Dynamic b
Input capacitance| Ciss| VDS = 15 V, VGS = 0 V, f = 1 MHz| –| 1650| –|
pF
Output capacitance| Coss| –| 450| –
Reverse transfer capacitance| Crss| –| 15.5| –
Total gate charge| Qg| VDS = 15 V, VGS = 10 V, ID = 10 A| –| 21.8| 33| nC
VDS = 15 V, VGS = 4.5 V, ID = 10 A| –| 9.8| 15
Gate-source charge| Qgs| –| 4.8| –
Gate-drain charge| Qgd| –| 1.55| –
Output charge| Qoss| VDS = 15 V, VGS = 0 V| –| 13.4| –
Gate resistance| Rg| f = 1 MHz| 0.8| 1.6| 3| W
Turn-on delay time| td(on)| VDD = 15 V, RL = 1.5 W
ID @ 10 A, VGEN = 10 V, Rg = 1 W
| –| 8| 16| ns
Rise time| tr| –| 5| 10
Turn-off delay time| td(off)| –| 20| 40
Fall time| tf| –| 5| 10
Turn-on delay time| td(on)| VDD = 15 V, RL = 1.5 W
ID @ 10 A, VGEN = 4.5 V, Rg = 1 W
| –| 15| 30
Rise time| tr| –| 52| 100
Turn-off delay time| td(off)| –| 18| 36
Fall time| tf| –| 9| 18
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| 22| A
Pulse diode forward current a| ISM| | –| –| 200
Body diode voltage| VSD| IS = 10 A| –| 0.74| 1.2| V
Body diode reverse recovery time| trr| IF = 10 A, di/dt = 100 A/μs, TJ = 25
°C| –| 21| 42| ns
Body diode reverse recovery charge| Qrr| –| 21| 42| nC
Reverse recovery fall time| ta| –| 10| –| ns
Reverse recovery rise time| tb| –| 11| –
Notes
- a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and the functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
Note
- a. VGS > minimum VGS at which RDS(on) is specified.
Note
- a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76822.
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