VISHAY EF Series Power MOSFET With Fast Body Diode Owner’s Manual

: June 16, 2024
: VISHAY

Table of Contents

VISHAY EF Series Power MOSFET With Fast Body Diode
Specifications
Applications
Product Usage Instructions
Drain-Source Body Diode Characteristics
FEATURES
TYPICAL CHARACTERISTICS
Package Information
FAQ
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY EF Series Power MOSFET With Fast Body Diode

Specifications

Product Name: SiHB055N60EF
Brand: Vishay Siliconix
Series: EF Series Power MOSFET With Fast Body Diode
Package: D2PAK (TO-263)
Channel Type: N-Channel MOSFET
Drain-Source Voltage (VDS): 650 VGS = 10 V
Single Pulse Avalanche Energy: 95 mJ
Maximum Power Dissipation: 29 W
Operating Junction and Storage Temperature Range: -55°C to +150°C
Soldering Recommendations (Peak Temperature) : 260°C for 10 seconds

Applications

The SiHB055N60EF MOSFET is suitable for various applications, including but not limited to:

Power supplies
Motor drives
Inverters
Switching regulators
Industrial equipment

Ordering Information

To order the SiHB055N60EF, use the following part number:

Package: D2PAK (TO-263)
Part Number: SIHB055N60EF-GE3

Product Usage Instructions

Thermal Resistance Ratings

Maximum Junction-to-Ambient: 62°C/W
Maximum Junction-to-Case (Drain): 0.45°C/W

Static Parameters

Drain-Source Breakdown Voltage (VDS): 600 V
Gate-Source Threshold Voltage (N) (VGS(th)): 3 V
Gate-Source Leakage (IGSS): –
Zero Gate Voltage Drain Current (IDSS): –
Drain-Source On-State Resistance (RDS(on)): –

Dynamic Parameters

Input Capacitance (Ciss): 680 pF
Output Capacitance (Coss): 63 pF
Reverse Transfer Capacitance (Crss): 29 pF
Effective Output Capacitance, Energy-Related (Co(er)): 15 pF
Effective Output Capacitance, Time Related (Co(tr)): 39 pF
Total Gate Charge (Qg): 89 nC
Gate-Source Charge (Qgs): 56 nC
Gate-Drain Charge (Qgd): 7 nC
Turn-On Delay Time (td(on)): 0.8 ns
Rise Time (tr): 13 ns
Turn-Off Delay Time (td(off)): 1.1 ns
Fall Time (tf): 46 ns
Gate Input Resistance (Rg): 123 Ω

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current (IS): 95 A
Pulsed Diode Forward Current (ISM): 78 A
Diode Forward Voltage (VSD): 1.2 V
Reverse Recovery Time (trr): 312 ns
Reverse Recovery Charge (Qrr): 2.2 µC
Reverse Recovery Current (IRRM): –

PRODUCT SUMMARY

FEATURES

4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
Industrial
- Welding
- Motor drives
- Battery chargers
- Solar (PV inverters)

ORDERING INFORMATION

Package| D2PAK (TO-263)
Lead (Pb)-free and halogen-free| SIHB055N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 600| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 46|

A

TC = 100 °C| 29
Pulsed drain current a| IDM| 123
Linear derating factor| | 2.2| W/°C
Single pulse avalanche energy b| EAS| 286| mJ
Maximum power dissipation| PD| 278| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dV/dt| 100| V/ns
Reverse diode dV/dt d| 150
Soldering recommendations (peak temperature) c| For 10 s| | 260| °C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature
b. V DD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A
c. 1.6 mm from case
d. ISD ≤ ID, dI/dt = 390 A/μs, starting TJ = 25 °C

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.45
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 30 mA| –| 0.55| –| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3| –| 5| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero gate voltage drain current| IDSS| VDS = 480 V, VGS = 0 V| –| –| 1| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 2| mA
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 26.5 A| –| 0.048| 0.055| W
Forward transconductance| gfs| VDS = 10 V, ID = 26.5 A| –| 23| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V,

f = 1 MHz

| –| 3707| –|

pF

VDS = 0 V to 480 V, VGS = 0 V

| –| 110| –
Effective output capacitance, time related b| Co(tr)| –| 680| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 26.5 A, VDS = 480 V

| –| 63| 95|

nC

Gate-source charge| Qgs| –| 29| –
Gate-drain charge| Qgd| –| 15| –
Turn-on delay time| td(on)|

VDD = 480 V, ID = 26.5 A, VGS = 10 V, Rg = 9.1 W

| –| 39| 78|

ns

Rise time| tr| –| 89| 134
Turn-off delay time| td(off)| –| 56| 84
Fall time| tf| –| 7| 14
Gate input resistance| Rg| f = 1 MHz, open drain| 0.4| 0.8| 1.6| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol D

showing the

integral reverse G

p – n junction diode S

| –| –| 46|

A

Pulsed diode forward current| ISM| –| –| 123
Diode forward voltage| VSD| TJ = 25 °C, IS = 26.5 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr|

TJ = 25 °C, IF = IS = 26.5 A,

di/dt = 100 A/μs, VR = 400 V

| –| 156| 312| ns
Reverse recovery charge| Qrr| –| 1.1| 2.2| μC
Reverse recovery current| IRRM| –| 13| –| A

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92420.

Package Information

TO-263AB (HIGH VOLTAGE)

VISHAY-EF-Series-Power-MOSFET-With-Fast-Body-Diode-
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| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D1| 6.86| –| 0.270| –
A1| 0.00| 0.25| 0.000| 0.010| E| 9.65| 10.67| 0.380| 0.420
b| 0.51| 0.99| 0.020| 0.039| E1| 6.22| –| 0.245| –
b1| 0.51| 0.89| 0.020| 0.035| e| 2.54 BSC| 0.100 BSC
b2| 1.14| 1.78| 0.045| 0.070| H| 14.61| 15.88| 0.575| 0.625
b3| 1.14| 1.73| 0.045| 0.068| L| 1.78| 2.79| 0.070| 0.110
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.066
c1| 0.38| 0.58| 0.015| 0.023| L2| –| 1.78| –| 0.070
c2| 1.14| 1.65| 0.045| 0.065| L3| 0.25 BSC| 0.010 BSC
D| 8.38| 9.65| 0.330| 0.380| L4| 4.78| 5.28| 0.188| 0.208
ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994.
Dimensions are shown in millimetres (inches).
Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the utmost extremes of the plastic body at datum A.
Thermal PAD contour is optional within dimensions E, L1, D1 and E1.
Dimensions b1 and c1 apply to base metal only.
Datum A and B to be determined at datum plane H.
Outline conforms to JEDEC outline to TO-263AB.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

VISHAY-EF-Series-Power-MOSFET-With-Fast-Body-Diode-
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Recommended Minimum Pads Dimensions in Inches/(mm)

Disclaimer
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