VISHAY EF Series Power MOSFET With Fast Body Diode Owner’s Manual
- June 16, 2024
- VISHAY
Table of Contents
VISHAY EF Series Power MOSFET With Fast Body Diode
Specifications
- Product Name: SiHB055N60EF
- Brand: Vishay Siliconix
- Series: EF Series Power MOSFET With Fast Body Diode
- Package: D2PAK (TO-263)
- Channel Type: N-Channel MOSFET
- Drain-Source Voltage (VDS): 650 VGS = 10 V
- Single Pulse Avalanche Energy: 95 mJ
- Maximum Power Dissipation: 29 W
- Operating Junction and Storage Temperature Range: -55°C to +150°C
- Soldering Recommendations (Peak Temperature) : 260°C for 10 seconds
Applications
The SiHB055N60EF MOSFET is suitable for various applications, including but not limited to:
- Power supplies
- Motor drives
- Inverters
- Switching regulators
- Industrial equipment
Ordering Information
To order the SiHB055N60EF, use the following part number:
- Package: D2PAK (TO-263)
- Part Number: SIHB055N60EF-GE3
Product Usage Instructions
Thermal Resistance Ratings
- Maximum Junction-to-Ambient: 62°C/W
- Maximum Junction-to-Case (Drain): 0.45°C/W
Static Parameters
- Drain-Source Breakdown Voltage (VDS): 600 V
- Gate-Source Threshold Voltage (N) (VGS(th)): 3 V
- Gate-Source Leakage (IGSS): –
- Zero Gate Voltage Drain Current (IDSS): –
- Drain-Source On-State Resistance (RDS(on)): –
Dynamic Parameters
- Input Capacitance (Ciss): 680 pF
- Output Capacitance (Coss): 63 pF
- Reverse Transfer Capacitance (Crss): 29 pF
- Effective Output Capacitance, Energy-Related (Co(er)): 15 pF
- Effective Output Capacitance, Time Related (Co(tr)): 39 pF
- Total Gate Charge (Qg): 89 nC
- Gate-Source Charge (Qgs): 56 nC
- Gate-Drain Charge (Qgd): 7 nC
- Turn-On Delay Time (td(on)): 0.8 ns
- Rise Time (tr): 13 ns
- Turn-Off Delay Time (td(off)): 1.1 ns
- Fall Time (tf): 46 ns
- Gate Input Resistance (Rg): 123 Ω
Drain-Source Body Diode Characteristics
- Continuous Source-Drain Diode Current (IS): 95 A
- Pulsed Diode Forward Current (ISM): 78 A
- Diode Forward Voltage (VSD): 1.2 V
- Reverse Recovery Time (trr): 312 ns
- Reverse Recovery Charge (Qrr): 2.2 µC
- Reverse Recovery Current (IRRM): –
PRODUCT SUMMARY
VDS (V) at TJ max.| 650
RDS(on) typ. (W) at 25 °C| VGS = 10 V| 0.048
Qg max. (nC)| 95
Qgs (nC)| 29
Qgd (nC)| 15
Configuration| Single
FEATURES
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Motor drives
- Battery chargers
- Solar (PV inverters)
ORDERING INFORMATION
Package| D2PAK (TO-263)
Lead (Pb)-free and halogen-free| SIHB055N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 600| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 46|
A
TC = 100 °C| 29
Pulsed drain current a| IDM| 123
Linear derating factor| | 2.2| W/°C
Single pulse avalanche energy b| EAS| 286| mJ
Maximum power dissipation| PD| 278| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dV/dt| 100| V/ns
Reverse diode dV/dt d| 150
Soldering recommendations (peak temperature) c| For 10 s| | 260| °C
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature
- b. V DD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A
- c. 1.6 mm from case
- d. ISD ≤ ID, dI/dt = 390 A/μs, starting TJ = 25 °C
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.45
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 30 mA| –| 0.55|
–| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3| –| 5| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero gate voltage drain current| IDSS| VDS = 480 V, VGS = 0 V| –| –| 1| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 2| mA
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 26.5 A| –| 0.048|
0.055| W
Forward transconductance| gfs| VDS = 10 V, ID = 26.5 A| –| 23| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V,
f = 1 MHz
| –| 3707| –|
pF
Output capacitance| Coss| –| 145| –
Reverse transfer capacitance| Crss| –| 5| –
Effective output capacitance, energy related a| Co(er)|
VDS = 0 V to 480 V, VGS = 0 V
| –| 110| –
Effective output capacitance, time related b| Co(tr)| –| 680| –
Total gate charge| Qg|
VGS = 10 V
|
ID = 26.5 A, VDS = 480 V
| –| 63| 95|
nC
Gate-source charge| Qgs| –| 29| –
Gate-drain charge| Qgd| –| 15| –
Turn-on delay time| td(on)|
VDD = 480 V, ID = 26.5 A, VGS = 10 V, Rg = 9.1 W
| –| 39| 78|
ns
Rise time| tr| –| 89| 134
Turn-off delay time| td(off)| –| 56| 84
Fall time| tf| –| 7| 14
Gate input resistance| Rg| f = 1 MHz, open drain| 0.4| 0.8| 1.6| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol
D
showing the
integral reverse G
p – n junction diode S
| –| –| 46|
A
Pulsed diode forward current| ISM| –| –| 123
Diode forward voltage| VSD| TJ = 25 °C, IS = 26.5 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr|
TJ = 25 °C, IF = IS = 26.5 A,
di/dt = 100 A/μs, VR = 400 V
| –| 156| 312| ns
Reverse recovery charge| Qrr| –| 1.1| 2.2| μC
Reverse recovery current| IRRM| –| 13| –| A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92420.
Package Information
TO-263AB (HIGH VOLTAGE)
| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.|
MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D1| 6.86| –| 0.270| –
A1| 0.00| 0.25| 0.000| 0.010| E| 9.65| 10.67| 0.380| 0.420
b| 0.51| 0.99| 0.020| 0.039| E1| 6.22| –| 0.245| –
b1| 0.51| 0.89| 0.020| 0.035| e| 2.54 BSC| 0.100 BSC
b2| 1.14| 1.78| 0.045| 0.070| H| 14.61| 15.88| 0.575| 0.625
b3| 1.14| 1.73| 0.045| 0.068| L| 1.78| 2.79| 0.070| 0.110
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.066
c1| 0.38| 0.58| 0.015| 0.023| L2| –| 1.78| –| 0.070
c2| 1.14| 1.65| 0.045| 0.065| L3| 0.25 BSC| 0.010 BSC
D| 8.38| 9.65| 0.330| 0.380| L4| 4.78| 5.28| 0.188| 0.208
ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994.
- Dimensions are shown in millimetres (inches).
- Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the utmost extremes of the plastic body at datum A.
- Thermal PAD contour is optional within dimensions E, L1, D1 and E1.
- Dimensions b1 and c1 apply to base metal only.
- Datum A and B to be determined at datum plane H.
- Outline conforms to JEDEC outline to TO-263AB.
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
Recommended Minimum Pads Dimensions in Inches/(mm)
Disclaimer
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NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE.
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FAQ
Frequently Asked Questions
- What is the maximum junction-to-ambient thermal resistance?
- The maximum junction-to-ambient thermal resistance is 62°C/W.
- What is the drain-source breakdown voltage?
- The drain-source breakdown voltage is 600 V.
- What is the gate-source threshold voltage?
- The gate-source threshold voltage is 3 V.
- What is the maximum continuous source-drain diode current?
- The maximum continuous source-drain diode current is 95 A.
- For technical questions, contact: [email protected]
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