VISHAY Si2304DDS N Channel 30 V D-S MOSFET Instruction Manual

N-Channel 30 V (D-S) MOSFET

Si2304DDS
www.vishay.com
Vishay Siliconix

Si2304DDS N Channel 30 V D-S MOSFET

FEATURES

• TrenchFET® power MOSFET
• 100 % Rg tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• DC/DC converter

Marking code : P4

PRODUCT SUMMARY

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

(TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 30| V
Gate-source voltage| VGS| ± 20
Continuous drain current (TJ = 150 °C)| TC = 25 °C| ID| 3.6 a| A
TC = 70 °C| 3.3
TA = 25 °C| 3.3
TA = 70 °C| 2.7
Pulsed drain current| IDM| 15
Continuous source-drain diode current| TC = 25 °C| IS| 1.4
TA = 25 °C| 0.9 b, c
Maximum power dissipation| TC = 25 °C| PD| 1.7| W
TC = 70 °C| 1.1
TA = 25 °C| 1.1 b, c
TA = 70 °C| 0.7 b, c
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d, e| | 260

THERMAL RESISTANCE RATINGS

Notes
a. Package limited
b. Surface mounted on 1″ x 1″ FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 30| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = 250 μA| –| 31| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| –| -5| –
Gate-source threshold voltage| VGS(th)| VDS = VGS , ID = 250 μA| 1.2| –| 2.2| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 30 V, VGS = 0 V| –| –| 1| μA
VDS = 30 V, VGS = 0 V, TJ = 55 °C| –| –| 10
On-state drain current a| ID(on)| VDS ³ 5 V, VGS = 10 V| 10| –| –| A
Drain-source on-state resistance a| RDS(on)| VGS = 10 V, ID = 3.2 A| –| 0.049| 0.060| W
VGS = 4.5 V, ID = 2.8 A| –| 0.061| 0.075
Forward transconductance a| gfs| VDS = 15 V, ID = 4.8 A| –| 11| –| S
Dynamic b
Input capacitance| Ciss|

VDS = 15 V, VGS = 0 V, f = 1 MHz

| –| 235| –| pF
Output capacitance| Coss| –| 45| –
Reverse transfer capacitance| Crss| –| 17| –
Total gate charge| Qg| VDS = 15 V, VGS = 10 V, ID = 3.4 A| –| 4.5| 6.7| nC
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A| –| 2.1| 3.2
Gate-source charge| Qgs| –| 0.85| –
Gate-drain charge| Qgd| | 0.65| –
Gate resistance| Rg| f = 1 MHz| 0.8| 4.4| 8.8| W
Turn-on delay time| td(on)| VDD = 15 V, RL = 5.6 W, ID @ 2.7 A, VGEN = 4.5 V, Rg = 1 W| –| 12| 20| ns
Rise time| tr| –| 50| 75
Turn-off delay time| td(off)| –| 12| 20
Fall time| tf| –| 22| 35
Turn-on delay time| td(on)| VDD = 15 V, RL = 5.6 W, ID @ 2.7 A, VGEN = 10 V, Rg = 1 W| –| 5| 10
Rise time| tr| –| 12| 20
Turn-off delay time| td(off)| –| 10| 15
Fall time| tf| –| 5| 10
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| 1.4| A
Pulse diode forward current| ISM| | –| –| 15
Body diode voltage| VSD| IS = 2.7 A, VGS = 0 V| –| 0.8| 1.2| V
Body diode reverse recovery time| trr| IF = 2.7 A, di/dt = 100 A/μs, TJ = 25 °C| –| 10| 20| ns
Body diode reverse recovery charge| Qrr| –| 5| 10| nC
Reverse recovery fall time| ta| –| 6| –| ns
Reverse recovery rise time| tb| –| 4| –

Notes
a. Pulse test; pulse width ≤300 μs, duty cycle ≤2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections  of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to- case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this  rating falls below the package limit

Package Information

SOT-23 (TO-236): 3-LEAD

ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

Application Note 826

RECOMMENDED MINIMUM PADS FOR SOT-23

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Revision: 01-Jan-2023
Document Number: 91000
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References

• applications.no
• Si2304DDS MOSFETs | Vishay

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