VISHAY IRFBE30S Power MOSFET Owner’s Manual

: June 16, 2024
: VISHAY

Table of Contents

IRFBE30S Power MOSFET
FEATURES
DESCRIPTION
TYPICAL CHARACTERISTICS
TO-263AB (HIGH VOLTAGE)
Disclaimer
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
www.vishay.com
Power MOSFET

IRFBE30S Power MOSFET

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

Thi s datasheet provi des i nformation about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

PRODUCT SUMMARY

VDS (V)| 800
RDS(on) (W)| VGS = 10 V| 3.0
Qg max. (nC)| 78
Qgs (nC)| 9.6
Qgd (nC)| 45
Configuration| Single
ORDERING INFORMATION

Note
a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 800| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 4.1| A
TC = 100 °C| 2.6
Pulsed Drain Current a| IDM| 16
Linear Derating Factor| | 1.0| W/°C
Single Pulse Avalanche Energy b| EAS| 260| mJ
Avalanche Current a| IAR| 4.1| A
Repetitive Avalanche Energy a| EAR| 13| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 125| W
Peak Diode Recovery dV/dt c| dV/dt| 2.0| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Soldering Recommendations (Peak temperature) d| for 10 s| | 300
Mounting Torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 Ω, IAS = 4.1 A (see fig. 12)
c. ISD ≤ 4.1 A, dI/dt ≤ 100 A/μs, VDD ≤ 600 V, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| –| 62| °C/W
Case-to-Sink, Flat, Greased Surface| RthCS| –| 0.50| –
Maximum Junction-to-Case (Drain)| RthJC| –| –| 1.0

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 800| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.90| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 800 V, VGS = 0 V| –| –| 100| μA
VDS = 640 V, VGS = 0 V, TJ = 125 °C| –| –| 500
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 2.5 A b| –| –| 3.0| W
Forward Transconductance| gfs| VDS = 100 V, ID = 2.5 A| 2.5| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5| –| 1300| –| pF
Output Capacitance| Coss| –| 310| –
Reverse Transfer Capacitance| Crss| –| 190| –
Total Gate Charge| Qg| VGS = 10 V| ID = 4.1 A, VDS = 400 V, see fig. 6 and 13 b| –| –| 78| nC
Gate-Source Charge| Qgs| –| –| 9.6
Gate-Drain Charge| Qgd| –| –| 45
Turn-On Delay Time| td(on)| VDD = 400 V, ID = 4.1 A,
Rg = 12 W, RD = 95 W, see fig. 10 b| –| 12| –| ns
Rise Time| tr| –| 33| –
Turn-Off Delay Time| td(off)| –| 82| –
Fall Time| tf| –| 30| –
Gate Input Resistance| Rg| f = 1 MHz, open drain| 0.6| –| 1.6| W
Internal Drain Inductance| LD| Between lead, 6 mm (0.25″) from package and center of die contact | –| 4.5| –| nH
Internal Source Inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the integral reverse p – n junction diode| –| –| 4.1| A
Pulsed Diode Forward Current a| ISM| –| –| 16
Body Diode Voltage| VSD| TJ = 25 °C, IS = 4.1 A, VGS = 0 V b| –| –| 1.8| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/μs b| –| 480| 720| ns
Body Diode Reverse Recovery Charge| Qrr| –| 1.8| 2.7| nC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91119.

TO-263AB (HIGH VOLTAGE)

| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D1| 6.86| –| 0.270| –
A1| 0.00| 0.25| 0.000| 0.010| E| 9.65| 10.67| 0.380| 0.420
b| 0.51| 0.99| 0.020| 0.039| E1| 6.22| –| 0.245| –
b1| 0.51| 0.89| 0.020| 0.035| e| 2.54 BSC| 0.100 BSC
b2| 1.14| 1.78| 0.045| 0.070| H| 14.61| 15.88| 0.575| 0.625
b3| 1.14| 1.73| 0.045| 0.068| L| 1.78| 2.79| 0.070| 0.110
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.066
c1| 0.38| 0.58| 0.015| 0.023| L2| –| 1.78| –| 0.070
c2| 1.14| 1.65| 0.045| 0.065| L3| 0.25 BSC| 0.010 BSC
D| 8.38| 9.65| 0.330| 0.380| L4| 4.78| 5.28| 0.188| 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994.
Dimensions are shown in millimeters (inches).
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
Thermal PAD contour optional within dimension E, L1, D1 and E1.
Dimension b1 and c1 apply to base metal only.
Datum A and B to be determined at datum plane H.
Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364
www.vishay.com
Revision: 15-Sep-08

I2PAK (TO-262) (HIGH VOLTAGE)

| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D| 8.38| 9.65| 0.330| 0.380
A1| 2.03| 3.02| 0.080| 0.119| D1| 6.86| –| 0.270| –
b| 0.51| 0.99| 0.020| 0.039| E| 9.65| 10.67| 0.380| 0.420
b1| 0.51| 0.89| 0.020| 0.035| E1| 6.22| –| 0.245| –
b2| 1.14| 1.78| 0.045| 0.070| e| 2.54 BSC| 0.100 BSC
b3| 1.14| 1.73| 0.045| 0.068| L| 13.46| 14.10| 0.530| 0.555
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.065
c1| 0.38| 0.58| 0.015| 0.023| L2| 3.56| 3.71| 0.140| 0.146
c2| 1.14| 1.65| 0.045| 0.065|
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994.
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body.
Thermal pad contour optional within dimension E, L1, D1, and E1.
Dimension b1 and c1 apply to base metal only.

Document Number: 91367
www.vishay.com
Revision: 27-Oct-08

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead Document Number: 73397
11-Apr-05
www.vishay.com
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Disclaimer

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Document Number: 91000
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