VISHAY IRF9Z34PBF Power MOSFET User Manual

VISHAY IRF9Z34PBF Power MOSFET

Product Information

Specifications

• Manufacturer: Vishay Siliconix
• Product Name: IRF9Z34
• Package Type: TO-220AB
• Configuration: P-Channel MOSFET
• Drain-Source Voltage (VDS): -60 V
• On-Resistance (RDS(on)): 9.9 Ω
• Gate Charge (Qg max.): 16 nC
• Gate-Source Charge (Qgs): 0.14 nC
• Gate-Drain Charge (Qgd): 5.9 nC

Description
The IRF9Z34 is a third-generation power MOSFET from Vishay Siliconix. It offers fast switching, ruggedized device design, low on-resistance, and cost- effectiveness. The TO-220AB package is widely preferred for commercial- industrial applications with power dissipation levels up to approximately 50 W. The package has low thermal resistance and is cost-effective, making it widely accepted in the industry.

Ordering Information

Thermal Resistance Ratings

Product Usage Instructions

Installation
To install the IRF9Z34 Power MOSFET, follow these steps:

1. Select an appropriate heat sink for the TO-220AB package.
2. Ensure the mounting surface is clean and free from debris.
3. Apply a thin layer of thermal grease to the case of the MOSFET.
4. Screw the MOSFET onto the heat sink using a 6-32 or M3 screw with the specified mounting torque.

Electrical Connections
Make the following electrical connections:

• Connect the drain (D) pin of the MOSFET to the load or circuit ground.
• Connect the source (S) pin of the MOSFET to the power supply ground.
• Connect the gate (G) pin of the MOSFET to the gate driver circuit.

Operating Conditions
The IRF9Z34 operates within the following conditions:

• Operating Junction Temperature (TJ): -55°C to +175°C
• Storage Temperature (Tstg): -55°C to +175°C
• Soldering Recommendations (peak temperature): 300°C for 10 seconds

Frequently Asked Questions (FAQ)

• Q: What is the maximum drain-source voltage (VDS) of the IRF9Z34?
  A: The maximum drain-source voltage is -60V.

• Q: Is the IRF9Z34 RoHS compliant?
  A: The datasheet provides information about RoHS-compliant and non-RoHS- compliant parts. Parts with lead (Pb) terminations are not RoHS-compliant. Please refer to the information in the datasheet for specific details.

• Q: What is the on-resistance (RDS(on)) of the IRF9Z34?
  A: The on-resistance is 9.9 Ω.

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• P-channel
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO- 220AB contribute to its wide acceptance throughout the industry.

PRODUCT SUMMARY

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
• b. VDD = -25 V, starting TJ = 25 °C, L = 1.3 mH, Rg = 25 Ω, IAS = -18 A (see fig. 12).
• c. ISD ≤ -18 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
• d. 1.6 mm from case.

THERMAL RESISTANCE RATINGS

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -60| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –| -0.060| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| -2.0| –| -4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -60 V, VGS = 0 V| –| –| -100| μA
VDS = -48 V, VGS = 0 V, TJ = 150 °C| –| –| -500
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = -11 A b| –| –| 0.14| W
Forward transconductance| gfs| VDS = -25 V, ID = -11 A b| 5.9| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = -25 V,

f = 1.0 MHz, see fig. 5

| –| 1100| –| pF
Output capacitance| Coss| –| 620| –
Reverse transfer capacitance| Crss| –| 100| –
Total gate charge| Qg| VGS = -10 V| ID = -1 8 A, VDS = -48 V,

see fig. 6 and 13 b

| –| –| 34| nC
Gate-source charge| Qgs| –| –| 9.9
Gate-drain charge| Qgd| –| –| 16
Turn-on delay time| td(on)| VDD = -30 V, ID = -18 A,

Rg = 12 W, RD = 1.5 W, see fig. 10 b

| –| 18| –| ns
Rise time| tr| –| 120| –
Turn-off delay time| td(off)| –| 20| –
Fall time| tf| –| 58| –
Gate input resistance| LD| Between lead, 6 mm (0.25″) from package and center of die contact| –| 4.5| –| nH
Internal drain inductance| LS| –| 7.5| –
Internal source inductance| Rg| f = 1 MHz, open drain| 0.7| –| 3.9| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse p -n junction diode| –| –| -18| A
Pulsed diode forward current a| ISM| –| –| -72
Body diode voltage| VSD| TJ = 25 °C, IS = -18 A, VGS = 0 V b| –| –| -6.3| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = -18 A, dI/dt = 100 A/μs b| –| 100| 200| ns
Body diode reverse recovery charge| Qrr| –| 0.28| 0.52| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91092.

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any liability for any errors, inaccuracies or incompleteness contained in any datasheet or any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any liability arising out of the application or use of any product, (ii) any liability, including without limitation special, consequential or incidental damages, and (iii) any implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRF9Z34 MOSFETs | Vishay

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