VISHAY IRFZ40 Power MOSFET Owner’s Manual

: June 16, 2024
: VISHAY

Table of Contents

VISHAY IRFZ40 Power MOSFET
Product Information
Product Usage Instructions
Power MOSFET
FEATURES
DESCRIPTION
SPECIFICATIONS
TYPICAL CHARACTERISTICS
References
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VISHAY IRFZ40 Power MOSFET

Product Information

Specifications

Product Name: IRFZ40
Brand: Vishay Siliconix
Type: Power MOSFET
Package: D TO-220AB
Channel Type: N-Channel
VDS (Drain-Source Voltage): 60V
RDS(on) (Drain-Source On-Resistance): 0.028Ω (VGS = 10V)
Qg (Gate Charge) (Max.): 67nC
Qgs (Gate-Source Charge): 18nC
Qgd (Gate-Drain Charge): 25nC
Configuration: Single

Description
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Ordering Information

Package	Lead (Pb)-free	Lead (Pb)-free and halogen-free
TO-220AB	IRFZ40PbF	IRFZ40PbF-BE3

Thermal Resistance Ratings

Parameter	Symbol	Typical Value	Maximum Value
Maximum junction-to-ambient	RthJA	–	62°C/W
Case-to-sink, flat, greased surface	RthCS	0.50°C/W	1.0°C/W
Maximum junction-to-case (drain)	RthJC	–	1.0°C/W

Drain-Source Body Diode Characteristics

Product Usage Instructions

Installation

To install the IRFZ40 Power MOSFET, follow these steps:

Select an appropriate heat sink for the TO-220AB package.
Ensure that the mounting surface is clean and free from any debris.
Apply a thin layer of thermal grease on the flat surface of the heat sink.
Align the IRFZ40 with the mounting holes on the heat sink.
Secure the IRFZ40 to the heat sink using a 6-32 or M3 screw with the recommended torque.

Electrical Connections

Make the following electrical connections:

Drain: Connect the drain terminal of the IRFZ40 to the load or circuit that requires power.
Source: Connect the source terminal of the IRFZ40 to the common ground or return path of the circuit.
Gate: Connect the gate terminal of the IRFZ40 to the control signal or gate driver circuit.

Operating Conditions

The IRFZ40 operates within the following conditions:

Temperature Range: -55°C to +175°C
Soldering Recommendations: Peak temperature of 300°C for a maximum duration of 10 seconds

Safety Precautions

When working with the IRFZ40, observe the following safety precautions:

Ensure that the power is disconnected before installing or removing the device.
Avoid touching the device terminals when it is powered.
Follow proper electrostatic discharge (ESD) handling procedures to prevent damage to the device.

Frequently Asked Questions (FAQ)

Q: What is the maximum drain-source voltage of the IRFZ40?
A: The maximum drain-source voltage is 60V.

Q: What is the on-resistance of the IRFZ40 at a gate-source voltage of 10V?
A : The on-resistance is 0.028Ω at a gate-source voltage of 10V.

Q: What is the gate charge of the IRFZ40?
A: The gate charge is 67nC.

Q: What is the thermal resistance from junction to ambient?
A: The typical thermal resistance from junction to ambient is 62°C/W.

Q: What is the recommended torque for mounting the IRFZ40?
A: The recommended torque for mounting is a 6-32 or M3 screw.

Power MOSFET

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rating
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRFZ40PbF
Lead (Pb)-free and halogen-free| IRFZ40PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 50|

A

TC = 100 °C| 36
Pulsed drain current a| IDM| 200
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 100| mJ
Maximum power dissipation| TC = 25 °C| PD| 150| W
Peak diode recovery dV/dt c| dV/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12)
ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
1.6 mm from case
Current limited by the package, (die current = 51 A)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0

SPECIFICATIONS

SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.060| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25| μA
VDS = 48 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 31 Ab| –| –| 0.028| Ù
Forward transconductance| gfs| VDS = 25 V, ID = 31 A| 15| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1900| –|

pF

Output capacitance| Coss| –| 920| –
Reverse transfer capacitance| Crss| –| 170| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 51 A, VDS = 48 V,

see fig. 6 and 13b

| –| –| 67|

nC

Gate-source charge| Qgs| –| –| 18
Gate-drain charge| Qgd| –| –| 25
Turn-on delay time| td(on)|

VDD = 30 V, ID = 51 A,

Rg = 9.1 Ù, RD = 0.55 Ù, see fig. 10b

| –| 14| –|

ns

Rise time| tr| –| 110| –
Turn-off delay time| td(off)| –| 45| –
Fall time| tf| –| 92| –
Internal drain inductance| LD| Between lead,6 mm (0.25″) from package and center of die contact

| –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the

integral reverse p – n junction diode

| –| –| 50|

A

Pulsed diode forward current a| ISM| –| –| 200
Body diode voltage| VSD| TJ = 25 °C, IS = 51 A, VGS = 0 Vb| –| –| 2.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 51 A, dI/dt = 100 A/ms| –| 120| 180| ns
Body diode reverse recovery charge| Qrr| –| 0.53| 0.80| nC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91385.

Disclaimer

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