VISHAY IRFZ14S Power MOSFET Owner’s Manual

VISHAY IRFZ14S Power MOSFET

Product Information

• Product Name: IRFZ14S, SiHFZ14S, SiHFZ14L
• Manufacturer: Vishay Siliconix
• Product Type: Power MOSFET
• Package Types: D2PAK (TO-263), I2PAK (TO-262)
• N-Channel MOSFET

Features:

• Third-generation power MOSFETs with advanced processing techniques
• Extremely low on-resistance per silicon area
• Fast switching speed
• Ruggedized device design
• High power capability
• Low internal connection resistance
• RoHS-compliant options available

Product Usage Instructions

1. Select the appropriate package type based on your application requirements: D2PAK (TO-263) or I2PAK (TO-262).
2. Ensure that the drain-source voltage (VDS) does not exceed the specified maximum voltage.
3. Apply a gate-source voltage (VGS) of 10V for proper operation.
4. Check the continuous drain current (ID) and pulsed drain current (IDM) ratings to ensure they meet your application’s requirements.
5. Consider the linear derating factor to calculate the maximum drain current based on the operating temperature.
6. Take note of the maximum power dissipation and peak diode recovery dv/dt values to avoid device damage.
7. Follow the recommended operating junction and storage temperature range.
8. Adhere to the soldering recommendations for proper installation.
9. Refer to the datasheet for additional technical details and specific ordering information.

FEATURES

• Advanced process technology
• Surface-mount (IRFZ14S, SiHFZ14S)
• Low profile through-hole (SiHFZ14L)
• 175 °C operating temperature
• Fast switching
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

• Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications.
• The D2PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application.
• The through-hole version (SiHFZ44L) is available for low profile applications.

PRODUCT SUMMARY

ORDERING INFORMATION

Note
See device orientation

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

A

TC = 100 °C| 7.2
Pulsed drain current a| IDM| 40
Linear derating factor|  | 0.29| W/°C
Single pulse avalanche energy b| EAS| 47| mJ
Maximum power dissipation| TC = 25 °C| PD| 43| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 3.7
Peak diode recovery dv/dt c| dv/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s|  | 300

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = 25 V, starting TJ = 25 °C, L = 548 μH, Rg = 25 , IAS = 10 A (see fig. 12)
• ISD 10 A, di/dt 90 A/μs, VDD VDS, TJ 175 °C
• 1.6 mm from case
• When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

°C/W

Maximum junction-to-case (drain)| RthJC| –| 3.5

Note
When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.063| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA

Zero gate voltage drain current

| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25|

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 6.0 A b| –| –| 0.2| W
Forward transconductance| gfs| VDS = 25 V, ID = 6.0 A b| 2.4| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 300| –|

pF

Output capacitance| Coss| –| 160| –
Reverse transfer capacitance| Crss| –| 29| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 10 A, VDS = 48 V,

see fig. 6 and 13 b

| –| –| 11|

nC

Gate-source charge| Qgs| –| –| 3.1
Gate-drain charge| Qgd| –| –| 5.8
Turn-on delay time| td(on)|

VDD = 30 V, ID = 10 A,

Rg = 24 W, RD = 2.7 W, see fig. 10 b

| –| 10| –|

ns

Rise time| tr| –| 50| –
Turn-off delay time| td(off)| –| 13| –
Fall time| tf| –| 19| –
Internal source inductance| LS| Between lead, and center of die contact| –| 7.5| –| nH
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse p – n junction diode| –| –| 10|

A

Pulsed diode forward current a| ISM| –| –| 40
Body diode voltage| VSD| TJ = 25 °C, IS = 10 A, VGS = 0 V b| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 10 A, di/dt = 100 A/μs b| –| 70| 140| ns
Body diode reverse recovery charge| Qrr| –| 200| 400| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width 300 μs; duty cycle 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Test Circuit

Peak Diode Recovery dV/dt Test Circuit

TO-263AB (HIGH VOLTAGE)

ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the utmost extremes of the plastic body at datum A.
4. Thermal PAD contour is optional within dimensions E, L1, D1 and E1.
5. Dimensions b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

I2PAK (TO-262) (HIGH VOLTAGE)

ECN: S-82442-Rev. A, 27-Oct-08 DWG: 5977

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the utmost extremes of the plastic body.
3. Thermal pad contour is optional within dimensions E, L1, D1, and E1.
4. Dimensions b1 and c1 apply to base metal only.

RECOMMENDED MINIMUM PADS FOR D2PAK 3-Lead

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN, OR OTHERWISE.
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References

• applications.no
• IRFZ14S, SiHFZ14S, SiHFZ14L MOSFETs | Vishay

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