VISHAY IRFZ34 Power MOSFET Owner’s Manual

: June 13, 2024
: VISHAY

Table of Contents

VISHAY IRFZ34 Power MOSFET
Instructions
Power MOSFET
DESCRIPTION
Disclaimer
References
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VISHAY IRFZ34 Power MOSFET

VISHAY IRFZ34 Power MOSFET-product

Instructions

The IRFZ34 is a power MOSFET designed for various commercial and industrial applications. 2. The TO-220AB package is recommended for use with power dissipation levels up to approximately 50 W. 3. Ensure proper thermal management as the IRFZ34 has thermal resistance ratings: – Maximum junction- to-ambient: 62 °C/W – Case-to-sink, flat, greased surface: 1.7 °C/W – Maximum junction-to-case (drain): 0.50 °C/W 4. The IRFZ34 is an N-channel MOSFET, meaning it can handle negative voltages and is commonly used for switching applications. 5. The maximum drain-source voltage (VDS) is 60 V. 6. The on- resistance (RDS(on)) of the IRFZ34 is 46 Ω, which determines its power ****

VISHAY IRFZ34 Power MOSFET-01

PRODUCT SUMMARY

Power MOSFET

FEATURES

Dynamic dV/dt rating
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRFZ34PbF
Lead (Pb)-free and halogen-free| IRFZ34PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

| SYMBOL| LIMIT|

UNIT

Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 30|

A

TC = 100 °C| 21
Pulsed drain current a| IDM| 120
Linear derating factor| | 0.59| W/°C
Single pulse avalanche energy b| EAS| 200| mJ
Maximum power dissipation| TC = 25 °C| PD| 88| W
Peak diode recovery dV/dt c| dV/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300 d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 25 V, starting TJ = 25 °C, L = 259 μH, Rg = 25 Ω, IAS = 30 A (see fig. 12)
ISD ≤ 30 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.|

UNIT

Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.|

UNIT

Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.065| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25| μA
VDS = 48 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 18 Ab| –| –| 0.050| Ù
Forward transconductance| gfs| VDS = 25 V, ID = 18 A| 9.3| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1200| –|

pF

Output capacitance| Coss| –| 600| –
Reverse transfer capacitance| Crss| –| 100| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 30 A, VDS = 48 V,

see fig. 6 and 13b

| –| –| 46|

nC

Gate-source charge| Qgs| –| –| 11
Gate-drain charge| Qgd| –| –| 22
Turn-on delay time| td(on)|

VDD = 30 V, ID = 30 A,

Rg = 12 Ù, RD = 1.0 Ù, see fig. 10b

| –| 13| –|

ns

Rise time| tr| –| 100| –
Turn-off delay time| td(off)| –| 29| –
Fall time| tf| –| 52| –
Internal drain inductance| LD| Between lead, D

6 mm (0.25″) from package and center of

G

die contact

S

| –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol D

showing the

integral reverse G

p – n junction diode S

| –| –| 30|

A

Pulsed diode forward current a| ISM| –| –| 120
Body diode voltage| VSD| TJ = 25 °C, IS = 30 A, VGS = 0 Vb| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 30 A, dI/dt = 100 A/ms| –| 120| 230| ns
Body diode reverse recovery charge| Qrr| –| 0.7| 1.4| nC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

* Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS ( 25 °C, unless otherwise noted)

Fig. 1Typical Output Characteristics, TC = 25 °C

Fig. 2Typical Output Characteristics, TC = 175 °C

Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature

Fig. 10b – Switching Time Waveforms

VISHAY IRFZ34 Power MOSFET-012 Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a – Unclamped Inductive Test Circuit

Fig. 12b – Unclamped Inductive Waveforms

Fig. 12c – Maximum Avalanche Energy vs. Drain Current

Fig. 13a – Basic Gate Charge Waveform

Fig. 13b – Gate Charge Test

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance current transformer
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. – device under test

Note
a. VGS = 5 V for logic level devices

Fig. 14 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91290.

VISHAY IRFZ34 Power MOSFET-020

DIM.	MILLIMETERS	INCHES
MIN.	MAX.	MIN.
A	4.24	4.65
b	0.69	1.02
b(1)	1.14	1.78
c	0.36	0.61
D	14.33	15.85
E	9.96	10.52
e	2.41	2.67
e(1)	4.88	5.28
F	1.14	1.40
H(1)	6.10	6.71
J(1)	2.41	2.92
L	13.36	14.40
L(1)	3.33	4.04
Ø P	3.53	3.94
Q	2.54	3.00

ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031

Note

M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein.

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