VISHAY IRLIZ14GPbF Power Mosfet Owner’s Manual

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IRLIZ14G
Vishay Siliconix
Power MOSFET

PRODUCT SUMMARY

VDS (V)| 60
RDS(on) (L)| VGS = 5.0 V| 0.20
Qg (Max.) (nC)| 8.4
Qgs (nC)| 3.5
Qgd (nC)| 6.0
Configuration| Single

FEATURES

• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V
• Fast switching
• Ease of paralleling
•  Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 10
Continuous drain current| VGS at 5.0 V| TC = 25 °C| ID| 8.0|

A

TC = 100 °C| 5.7
Pulsed drain current a| IDM| 32
Linear derating factor| | 0.18| W/°C
Single pulse avalanche energy b| EAS| 39.5| mJ
Maximum power dissipation| TC = 25 °C| PD| 27| W
Peak diode recovery dV/dt c| dV/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| M3 screw| | 0.6| Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 0.79 mH, RG = 25 Ω, IAS = 10 A (see fig. 12)
c. ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 65|

°C/W

Maximum junction-to-case (drain)| RthJC| –| 5.5
SPECIFICATIONS T J = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-ssource breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.070| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1.0| –| 2.0| V
Gate-source leakage| IGSS| VGS = ± 10 V| –| –| ± 100| nA

Zero gate voltage drain current

| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25|

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C| –| –| 250

Drain-source on-state resistance

| RDS(on)| VGS = 5.0 V| ID = 4.8 Ab| –| –| 0.20| L
VGS = 4.0 V| ID = 4.0 Ab| –| –| 0.28
Forward transconductance| gfs| VDS = 25 V, ID = 4.8 Ab| 3.6| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 400| –|

pF

Output capacitance| Coss| –| 170| –
Reverse transfer capacitance| Crss| –| 42| –
Drain to sink capacitance| C| f = 1.0 MHz| –| 12| –
Total gate charge| Qg|

VGS = 5.0 V

|

ID = 10 A, VDS = 48 V,

see fig. 6 and 13b

| –| –| 8.4|

nC

Gate-source charge| Qgs| –| –| 3.5
Gate-drain charge| Qgd| –| –| 6.0
Turn-on delay time| td(on)|

VDD = 30 V, ID = 10 A, RG = 12 L, RD= 2.8 L,

see fig. 10b

| –| 9.3| –|

ns

Rise time| tr| –| 110| –
Turn-off delay time| td(off)| –| 17| –
Fall time| tf| –| 26| –
Internal drain inductance| LD| Between lead,

6 mm (0.25″) from

package and center of

die contact

| –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol D showing the integral reverse G p – n junction diode | –| –| 8.0|

A

Pulsed diode forward current a| ISM| –| –| 32
Body diode voltage| VSD| TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb| –| 65| 130| ns
Body diode reverse recovery charge| Qrr| –| 0.33| 0.65| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

TO-220 FULLPAK (High Voltage)

OPTION 1: FACILITY CODE = 9

| MILLIMETERS
---|---
DIM.| MIN.| NOM.| MAX.
A| 4.60| 4.70| 4.80
b| 0.70| 0.80| 0.91
b1| 1.20| 1.30| 1.47
b2| 1.10| 1.20| 1.30
C| 0.45| 0.50| 0.63
D| 15.80| 15.87| 15.97
e| 2.54 BSC
E| 10.00| 10.10| 10.30
F| 2.44| 2.54| 2.64
G| 6.50| 6.70| 6.90
L| 12.90| 13.10| 13.30
L1| 3.13| 3.23| 3.33
Q| 2.65| 2.75| 2.85
Q1| 3.20| 3.30| 3.40
Ø R| 3.08| 3.18| 3.28

Notes

1. To be used only for process drawing
2.  These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking

OPTION 2: FACILITY CODE = Y

| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.570| 4.830| 0.180| 0.190
A1| 2.570| 2.830| 0.101| 0.111
A2| 2.510| 2.850| 0.099| 0.112
b| 0.622| 0.890| 0.024| 0.035
b2| 1.229| 1.400| 0.048| 0.055
b3| 1.229| 1.400| 0.048| 0.055
c| 0.440| 0.629| 0.017| 0.025
D| 8.650| 9.800| 0.341| 0.386
d1| 15.88| 16.120| 0.622| 0.635
d3| 12.300| 12.920| 0.484| 0.509
E| 10.360| 10.630| 0.408| 0.419
e| 2.54 BSC| 0.100 BSC
L| 13.200| 13.730| 0.520| 0.541
L1| 3.100| 3.500| 0.122| 0.138
n| 6.050| 6.150| 0.238| 0.242
Ø P| 3.050| 3.450| 0.120| 0.136
u| 2.400| 2.500| 0.094| 0.098
V| 0.400| 0.500| 0.016| 0.020
ECN: E19-0180-Rev. D, 08-Apr-2019 DWG: 5972

Notes

1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3.  All critical dimensions should C meet Cpk > 1.33
4.  All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking

Disclaimer

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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
For technical questions, contact: hvmos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• applications.no
• IRLIZ14G MOSFETs | Vishay

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