VISHAY IRL620 Power MOSFET Instructions
- June 13, 2024
- VISHAY
Table of Contents
IRL620
Vishay Siliconix
Power MOSFET
IRL620 Power MOSFET
PRODUCT SUMMARY
VDS (V)|
200
RDS(on) (L)
|
VGS = 5.0 V
|
0.80
Qg (Max.) (nC)|
16
Qgs (nC)|
2.7
Qgd (nC)|
9.6
Configuration|
Single
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRL620PbF
Lead (Pb)-free and halogen-free| IRL620PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 200| V
Gate-source voltage| VGS| ± 10
Continuous drain current| VGS at 5 V| TC = 25 °C| ID| 5.2| A
TC = 100 °C| 3.3
Pulsed drain current a| IDM| 21
Linear derating factor| | 0.40| W/°C
Single pulse avalanche energy b| EAS| 125| mJ
Repetitive avalanche current a| IAR| 5.2| A
Repetitive avalanche energy a| EAR| 5.0| mJ
Maximum power dissipation| TC = 25 °C| PD| 50| W
Peak diode recovery dV/dt c| dV/dt| 5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300 d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 6.9 mH, Rg = 25 Ω, IAS = 5.2 A (see
fig. 12)
c. ISD ≤ 5.2 A, dV/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 2.5
SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGs = 0 V, ID = 250 pA| 200| | –| V
Vps temperature coefficient| VDsa..1| Reference to 25 °C, ID = 1 mA| –| 0.27|
–| V/°C
Gate-source threshold voltage| VGS(th)| V05 = V05, 1p = 250 pA| 1.0| –| 2.0| V
Gate-source leakage| IGSS| VGs = ± 10| –| –| ± 100| µA
Zero gate voltage drain current| lDSS| VDs= 200 V, VG,s = 0 V| –| –| 25| pA
Vps = 160 V, VGs = 0 V, Tj = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| Ves = 5.0 V| | –| | 0.80| Ω
VGs = 4.0 V| D
IID: 23.61 AA:| –| –| 1.0
Forward transconductance| gfs| Vps = 50 V, ID = 3.1 Ab| 1.2| | | S
Dynamic
Input capacitance| Ciss| VGs = 0 V,
VDs = 25 V,
f = 1.0 MHz, see fig. 5| –| 360| –| pF
Output capacitance| C0ss| –| 91|
Reverse transfer capacitance| Crss| –| 27| –
Total gate charge| Qg| VGs = 5.0 V| ID ,
see fig. 6 and 1160 V
3b| –| –| 16| nC
Gate-source charge| Qgs| –| –| 2.7
Gate-drain charge| Qgd| –| –| 9.6
Tum-on delay time| td(on)| Vpp = 100 V, 1p = 9.0 A,
119 = 6.0 12, RD = 11 12, see fig. 10b| –| 4.2| –| ns
Rise time| tr| –| 31|
Tum-off delay time| td(off)| –| 18| –
Fall time| tf| –| 17| –
Internal drain inductance| LD| Between lead, 6 mm (0.25″) from package and
center of die contact| –| 4.5| | nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| Is| MOSFET symbol sy showing the
integral reverse
p – n junction diode| –| –| 5.2| A
Pulsed diode forward current a| Ism| –| | 21
Body diode voltage| VSD| Tj = 25 °C, Is = 5.2 A VGs = 0 Vb| –| –| 1.8| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF= 5.2 A dl/dt = 100
A/psb| –| 180| 270| ns
Body diode reverse recovery charge| Qrr| –| 1.1| 1.7| µC
Forward turn-on time| ton| Intrinsic tum-on time is negligible (tum-on is
dominated by Ls and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
maintains worldwide manufacturing capability. Products may be manufactured at
one of several qualified locations. Reliability data for Silicon Technology
and Package Reliability represent a composite of all qualified locations. For
related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?91301.
TO-220-1
| DIM. | MILLIMETERS | INCHES |
|---|---|---|
| MIN. | MAX. | MIN. |
| A | 4.24 | 4.65 |
| b | 0.69 | 1.02 |
| b(1) | 1.14 | 1.78 |
| c | 0.36 | 0.61 |
| D | 14.33 | 15.85 |
| E | 9.96 | 10.52 |
| e | 2.41 | 2.67 |
| e(1) | 4.88 | 5.28 |
| F | 1.14 | 1.40 |
| H(1) | 6.10 | 6.71 |
| J(1) | 2.41 | 2.92 |
| L | 13.36 | 14.40 |
| L(1) | 3.33 | 4.04 |
| Ø P | 3.53 | 3.94 |
| Q | 2.54 | 3.00 |
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink
hole for HVM
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Revision: 01-Jan-2023
Document Number: 91000
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References
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