VISHAY IRFP460LC Power MOSFET Owner’s Manual
- June 13, 2024
- VISHAY
Table of Contents
VISHAY IRFP460LC Power MOSFET
Power MOSFET
FEATURES
- Ultra low gate charge
- Reduced gate drive requirement
- Enhanced 30 V VGS rating
- Reduced Ciss, Coss, Crss
- Isolated central mounting hole
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VDS (V)| 500
RDS(on) (W)| VGS = 10 V| 0.27
Q g (max.) (nC)| 120
Q g s (nC)| 32
Qgd (nC)| 49
Configuration| Single
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information tables in this datasheet for details
DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate
charge over conventional MOSFETs.
Utilizing advanced Power MOSFETs technology the device improvements allow for
reduced gate drive requirements, faster switching speeds and increased total
system savings.
These device improvements combined with the proven ruggedness and reliability
of Power MOSFETs offer the designer a new standard in power transistors for
switchingapplications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because its isolated mounting hole.
ORDERING INFORMATION
Package| TO-247
Lead (Pb)-free| IRFP460LCPbF
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 30
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 20| A
TC = 100 °C| 12
Pulsed drain current a| IDM| 80
Linear derating Factor| | 2.2| W/°C
Single pulse avalanche energy b| EAS| 960| mJ
Repetitive avalanche currenta| IAR| 20| A
Repetitive avalanche energya| EAR| 28| mJ
Maximum power dissipation| TC = 25 °C| PD| 280| W
Peak diode recovery dV/dtc| dV/dt| 3.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature)| for 10 s| | 300 d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
(see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A
(see fig. 12)
c. ISD ≤ 20 A, dI/dt ≤ 160 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| –| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (Drain)| RthJC| –| 0.45
SPECIFICATIONS TJ = 25 °C, unless otherwise noted|
---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT|
Static|
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V|
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.59|
–| V/°C|
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0|
V|
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA|
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA|
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 12 A b| –| –|
0.27| W|
Forward transconductance| gfs| VDS = 50 V, ID = 12 A b| 12| –| –| S|
Dynamic|
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5
| –| 3600| –| pF|
Output capacitance| Coss| –| 440| –
Reverse transfer capacitance| Crss| –| 39| –
Total gate charge| Qg| VGS = 10 V| ID = 20 A, VDS = 400 V,
see fig. 6 and 13 b
| –| –| 120| nC|
Gate-source charge| Qgs| –| –| 32
Gate-drain charge| Qgd| –| –| 49
Turn-on delay time| td(on)| VDD = 250 V, ID = 20 A
RG = 4.3 W, RD = 12 W, see fig. 10 b
| –| 18| –| ns|
Rise time| tr| –| 77| –
Turn-off delay time| td(off)| –| 40| –
Fall time| tf| –| 43| –
Internal drain inductance| LD| | | DS| | –| 5.0| –| |
Between lead,6 mm (0.25″) from package and center of die contact | G| nH|
Internal source inductance| LS| –| 13| –
Drain-Source Body Diode Characteristics|
Continuous source-drain diode current| IS| | | | DS| –| –| 20| |
MOSFET symbol showing the integral reverse p – n junction diode | G| A|
Pulsed diode forward current a| IS| –| –| 80
Body diode voltage| VSD| TJ = 25 °C, IS = 20 A, VGS = 0 V b| –| –| 1.8| V|
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 20 A, dI/dt = 100 A/μs
b| –| 570| 860| ns|
Body diode reverse recovery charge| Qrr| –| 6.6| 9.9| μC|
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)|
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 – Typical Output Characteristics, TC = 25 °C
Fig. 2 – Typical Output Characteristics, TC = 150 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 4 – Normalized On-Resistance vs. Temperature
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 8 – Maximum Safe Operating Area
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10 – Switching Time Test Circuit
Fig. 11 – Switching Time Waveforms
Fig. 12 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 13 – Unclamped Inductive Test Circuit
Fig. 14 – Unclamped Inductive Waveforms
Fig. 15 – Maximum Avalanche Energy vs. Drain Current
Fig. 16 – Basic Gate Charge Waveform
Fig. 17 – Gate Charge Test Circuit
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.83| 5.21|
A1| 2.29| 2.55|
A2| 1.50| 2.49|
b| 1.12| 1.33|
b1| 1.12| 1.28|
b2| 1.91| 2.39| 6
b3| 1.91| 2.34|
b4| 2.87| 3.22| 6, 8
b5| 2.87| 3.18|
c| 0.55| 0.69| 6
c1| 0.55| 0.65|
D| 20.40| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D1| 16.25| 16.85| 5
D2| 0.56| 0.76|
E| 15.50| 15.87| 4
E1| 13.46| 14.16| 5
E2| 4.52| 5.49| 3
e| 5.44 BSC|
L| 14.90| 15.40|
L1| 3.96| 4.16| 6
Ø P| 3.56| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.69|
S| 5.54| 5.74|
Notes
- Package reference: JEDEC® TO247, variation AC
- All dimensions are in mm
- Slot required, notch may be rounded
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
- Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition
VERSION 2: FACILITY CODE = Y
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
- Outline conforms to JEDEC outline TO-247 with exception of dimension c
VERSION 3: FACILITY CODE = N
| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29| 15.87
A2| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e| 5.46 BSC
b1| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L| 14.20| 16.10
b3| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N| 7.62 BSC
b5| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –| 7.39
c1| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52| 5.49
D1| 13.08| –| S| 5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Disclaimer
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References
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