VISHAY G80N60 EF Series Power MOSFET With Fast Body Diode Owner’s Manual

: June 13, 2024
: VISHAY

Table of Contents

VISHAY G80N60 EF Series Power MOSFET With Fast Body Diode
Product Information
Product Usage Instructions
FEATURES
SPECIFICATIONS
TYPICAL CHARACTERISTICS
TO-247AC (High Voltage)
References
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Download This Manual (PDF format)

VISHAY G80N60 EF Series Power MOSFET With Fast Body Diode

Product Information

Product Name: SiHG80N60EF
Brand: Vishay Siliconix
Series: EF Series
Type: Power MOSFET With Fast Body Diode
Package Type: TO-247AC
Channel Type: N-Channel MOSFET
Drain-Source Voltage (VDS): 650 V
Gate-Source Voltage (VGS): 10 V
Maximum Drain Current (ID): 400 A
Single Pulse Avalanche Energy: 143 nC
Maximum Power Dissipation (PD): 260 W
Operating Junction and Storage Temperature Range: -55 to +150 °C
Soldering Recommendations (Peak Temperature): 260 °C for 10 seconds

Product Usage Instructions

Ensure that the drain-source voltage (VDS) does not exceed 650 V.
Apply a gate-source voltage (VGS) of 10 V for proper operation.
The maximum drain current (ID) should not exceed 400 A.
Avoid exceeding the single pulse avalanche energy of 143nC.
The maximum power dissipation (PD) should not exceed 260 W.
The operating junction and storage temperature range is -55 to +150 °C.
When soldering, ensure that the peak temperature does not exceed 260 °C and limit the duration to 10 seconds.

For more detailed technical information and specifications, please refer to the Vishay Siliconix website or contact the manufacturer.

EF Series Power MOSFET With Fast Body Diode

TO-247AC

PRODUCT SUMMARY

FEATURES

Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912.

APPLICATIONS

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free and halogen-free| SiHG80N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 600| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 80|

A

TC = 100 °C| 51
Pulsed drain current a| IDM| 254
Linear derating factor| | 4.2| W/°C
Single pulse avalanche energy b| EAS| 1142| mJ
Maximum power dissipation| PD| 520| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dv/dt| 70| V/ns
Reverse diode dv/dt d| 50
Soldering recommendations (peak temperature) c| For 10 s| | 260| °C

Notes

Repetitive rating; pulse width limited by maximum junction temperature
VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 9.0 A
1.6 mm from case
ISD  ID, di/dt = 100 A/μs, starting TJ = 25 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.24

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 10 mA| –| 0.65| –| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero gate voltage drain current| IDSS| VDS = 480 V, VGS = 0 V| –| –| 1| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 500
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 40 A| –| 0.028| 0.032| W
Forward transconductance a| gfs| VDS = 30 V, ID = 40 A| –| 25| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V,

f = 1 MHz

| –| 6600| –|

pF

VDS = 0 V to 480 V, VGS = 0 V

| –| 214| –
Effective output capacitance, time related b| Co(tr)| –| 1051| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 40 A, VDS = 480 V

| –| 266| 400|

nC

Gate-source charge| Qgs| –| 43| –
Gate-drain charge| Qgd| –| 143| –
Turn-on delay time| td(on)|

VDD = 480 V, ID = 40 A, VGS = 10 V, Rg = 9.1 W

| –| 59| 89|

ns

Rise time| tr| –| 144| 216
Turn-off delay time| td(off)| –| 272| 408
Fall time| tf| –| 168| 252
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| 1.2| 2.4| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol

D

showing the

integral reverse G

p – n junction diode

S

| –| –| 80|

A

Pulsed diode forward current| ISM| –| –| 254
Diode forward voltage| VSD| TJ = 25 °C, IS = 40 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr|

TJ = 25 °C, IF = IS = 40 A,

di/dt = 100 A/μs, VR = 400 V

| –| 206| 412| ns
Reverse recovery charge| Qrr| –| 1.9| 3.8| μC
Reverse recovery current| IRRM| –| 18| –| A

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?92133.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.83| 5.21|
A1| 2.29| 2.55|
A2| 1.50| 2.49|
b| 1.12| 1.33|
b1| 1.12| 1.28|
b2| 1.91| 2.39| 6
b3| 1.91| 2.34|
b4| 2.87| 3.22| 6, 8
b5| 2.87| 3.18|
c| 0.55| 0.69| 6
c1| 0.55| 0.65|
D| 20.40| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D1| 16.25| 16.85| 5
D2| 0.56| 0.76|
E| 15.50| 15.87| 4
E1| 13.46| 14.16| 5
E2| 4.52| 5.49| 3
e| 5.44 BSC|
L| 14.90| 15.40|
L1| 3.96| 4.16| 6
Ø P| 3.56| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.69|
S| 5.54| 5.74|

Notes

Package reference: JEDEC® TO247, variation AC
All dimensions are in mm
Slot required, notch may be rounded
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y VISHAY-G80N60-EF-Series-Power-MOSFET-With-
Fast-Body-Diode-fig-23

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

	MILLIMETERS			MILLIMETERS
DIM.	MIN.	MAX.	DIM.	MIN.
A	4.65	5.31	D2	0.51
A1	2.21	2.59	E	15.29
A2	1.17	1.37	E1	13.46
b	0.99	1.40	e	5.46 BSC
b1	0.99	1.35	k	0.254
b2	1.65	2.39	L	14.20
b3	1.65	2.34	L1	3.71
b4	2.59	3.43	N	7.62 BSC
b5	2.59	3.38	P	3.56
c	0.38	0.89	P1	–
c1	0.38	0.84	Q	5.31
D	19.71	20.70	R	4.52
D1	13.08	–	S	5.51 BSC

ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

For technical questions, contact: hvm@vishay.com.

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000.

Disclaimer

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