VISHAY D Series Power MOSFET Owner’s Manual

VISHAY D Series Power MOSFET

Product Information

Product Usage Instructions

1. Make sure to handle the SiHF18N50D MOSFET with care.

2. Ensure that the MOSFET is properly connected in the circuit according to the provided pin configuration.

3. Provide a suitable gate drive circuitry to control the MOSFET’s switching behavior.

4. Ensure that the drain-source voltage (VDS) does not exceed the specified maximum voltage of 550 VGS = 10 V.

5. Observe the specified maximum drain current (ID) and pulsed drain current (IDM) to prevent damage to the MOSFET.

6. Take into account the specified maximum power dissipation (PD) to avoid overheating of the MOSFET.

7. Operate the MOSFET within the specified temperature range of -55°C to +150°C.

8. Follow the recommended soldering recommendations, including peak temperature and mounting torque, for proper installation. Refer to the provided thermal resistance ratings (RthJA, RthJC) for understanding the heat dissipation characteristics of the
   MOSFET.

9. Refer to the datasheet for detailed electrical characteristics and performance specifications of the SiHF18N50D MOSFET.

10. For any technical questions or assistance, contact [email protected].

FEATURES

• Optimal design
  • Low area specific on-resistance
  • Low input capacitance (Ciss)
  • Reduced capacitive switching losses
  • High body diode ruggedness
  • Avalanche energy rated (UIS)
• Optimal efficiency and operation
  • Low cost
  • Simple gate drive circuitry
  • Low figure-of-merit (FOM): Ron x Qg
  • Fast switching
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are
• RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
• Please see the information / tables in this datasheet for details

TO-220 FULLPAK

PRODUCT SUMMARY

APPLICATIONS

• Consumer electronics
  • Displays (LCD or Plasma TV)
• Server and telecom power supplies
  • SMPS
• Industrial
  • Welding
  • Induction heating
  • Motor drives
• Battery chargers

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500|

V

Gate-source voltage| VGS| ± 30
Gate-source voltage AC (f > 1 Hz)| 30
Continuous drain current (TJ = 150 °C) e| VGS at 10 V| TC = 25 °C| ID| 18|

A

TC = 100 °C| 11
Pulsed drain current a| IDM| 53
Linear derating factor|  | 0.3| W/°C
Single pulse avalanche energy b| EAS| 115| mJ
Maximum power dissipation| PD| 39| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dV/dt| 24| V/ns
Reverse diode dV/dt d| 0.4
Soldering recommendations (peak temperature) c| For 10 s|  | 300| °C
Mounting torque| M3 screw|  | 0.6| Nm

THERMAL RESISTANCE RATINGS

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 250 μA| –| 0.58| –| V/°C
Gate threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3.0| –| 5.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 1| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 10
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 9 A| –| 0.23| 0.28| W
Forward transconductance| gfs| VDS = 50 V, ID = 9 A| –| 6.4| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V, f = 1.0 MHz| –| 1500| –|

pF

Output capacitance| Coss| –| 131| –
Reverse transfer capacitance| Crss| –| 14| –
Effective output capacitance, energy related a| Co(er)|

VGS = 0 V, VDS = 0 V to 400 V

| –| 113| –
Effective output capacitance, time related b| Co(tr)| –| 164| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 9 A, VDS = 400 V

| –| 38| 76|

nC

Gate-source charge| Qgs| –| 11| –
Gate-drain charge| Qgd| –| 17| –
Turn-on delay time| td(on)|

VDD = 400 V, ID = 9 A, VGS = 10 V, Rg = 9.1 W

| –| 19| 38|

ns

Rise time| tr| –| 36| 72
Turn-off delay time| td(off)| –| 36| 72
Fall time| tf| –| 30| 60
Gate input resistance| Rg| f = 1 MHz, open drain| –| 1.7| –| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol D

showing the

integral reverse                     G

P – N junction diode                         S

| –| –| 18|

A

Pulsed diode forward current| ISM| –| –| 72
Diode forward voltage| VSD| TJ = 25 °C, IS = 9 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr|

TJ = 25 °C, IF = IS = 9 A,

dI/dt = 100 A/μs, VR = 20 V

| –| 354| –| ns
Reverse recovery charge| Qrr| –| 3.9| –| μC
Reverse recovery current| IRRM| –| 21| –| A

Notes

• Repetitive rating; pulse width limited by maximum junction temperature
• VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 10 A
• 1.6 mm from case
• ISD ID, starting TJ = 25 °C e. Limited by maximum junction temperature

Notes

• Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
• Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

TO-220 FULLPAK (High Voltage)

OPTION 1: FACILITY CODE = 9

Notes

1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking

OPTION 2: FACILITY CODE = Y

ECN: E19-0180-Rev. D, 08-Apr-2019 DWG: 5972

Notes

1. To be used only for process drawing
2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
3. All critical dimensions should C meet Cpk > 1.33
4. All dimensions include burrs and plating thickness
5. No chipping or package damage
6. Facility code will be the 1st character located at the 2nd row of the unit marking

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Inter technology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience an d for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay o f any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Revision : 01-Jan-2023
Document Number : 91000
For technical questions , contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• applications.no
• Vishay Intertechnology: Passives & Discrete Semiconductors
• SiHF18N50D MOSFETs | Vishay
• IRF830B MOSFETs | Vishay

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