VISHAY IRFR010 Sihfr010 Mosfets Owner’s Manual

VISHAY IRFR010 Sihfr010 Mosfets

Product Information

• Product Name: IRFR010, SiHFR010
• Manufacturer: Vishay Siliconix
• Product Type: Power MOSFET
• Package Type: DPAK (TO-252)
• Configuration: Single
• Features: Very low on-state resistance, high transconductance, superior reverse energy, and diode recovery dv/dt capability
• Advantages: Voltage control, fast switching, ease of paralleling, temperature stability
• Suitable Applications: Computers and peripherals, telecommunication equipment, dc-to-dc converters, consumer products

Usage Instructions

1. Ensure that the product is properly mounted on a circuit board using the DPAK (TO-252) package for surface mounting.
2. Connect the drain, gate, and source terminals of the MOSFET according to the circuit requirements.
3. Provide a drain-source voltage (VDS) within the specified range (up to 50V).
4. Apply a gate-source voltage (VGS) of 10V to control the MOSFET.
5. If needed, use a continuous drain current (ID) within the specified limits.
6. Take into account the pulsed drain current (IDM) and avalanche current (IAS) for transient conditions.
7. Consider the maximum power dissipation (PD) and linear derating factor for proper heat management.
8. Observe the recommended operating junction and storage temperature range (TJ, Tstg) to ensure reliable operation.
9. Follow the recommended soldering recommendations for peak temperature during assembly.

FEATURES

• Low drive current
• Surface-mount
• Fast switching
• Ease of paralleling
• Excellent temperature stability
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

PRODUCT SUMMARY

VDS (V)| 50
RDS(on) (Ù)| VGS = 10 V| 0.20
Qg (Max.) (nC)| 10
Qgs (nC)| 2.6
Qgd (nC)| 4.8
Configuration| Single

DESCRIPTION

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieve very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The power MOSFET transistors also feature all of the well- established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance.

The DPAK (TO-252) surface-mount package brings the advantages of power MOSFETs to high-volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9012, and SiHFR9012 is provided on 16 mm tape. The straight lead option IRFU9012, and SiHFU9012 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as computers and peripherals, telecommunication equipment, dc-to-dc converters, and a wide range of consumer products.

ORDERING INFORMATION

Package| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)
Lead (Pb)-free and halogen-free| SiHFR010-GE3| SiHFR010TR-GE3| SiHFR010TRL- GE3| IRFR010PbF-BE3
Lead (Pb)-free| IRFR010PbF| IRFR010TRPbF| IRFR010TRLPbF| IRFR010TRRPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 50| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 8.2|

A

TC = 100 °C| 5.2
Pulsed drain current a| IDM| 33
Avalanche current b| IAS| 1.5
Linear derating factor| | 0.20| W/°C
Maximum power dissipation| TC = 25 °C| PD| 25| W
Peak diode recovery dV/dt c| dV/dt| 2.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
• VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 Ω
• ISD ≤ 8.2 A, dI/dt ≤ 130 A/μs, VDD ≤ 40 V, TJ ≤ 150 °C
• 1.6 mm from the case
• When mounted on a 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| –| 110|

°C/W

Case-to-sink| RthCS| –| 1.7| –
Maximum junction-to-case (drain)| RthJC| –| –| 5.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 50| –| –| V
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 500| nA

Zero gate voltage drain current

| IDSS| VDS = 50 V, VGS = 0 V| –| –| 250|

μA

VDS = 40 V, VGS = 0 V, TJ = 125 °C| –| –| 1000
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 4.6 Ab| –| 0.16| 0.20| Ù
Forward transconductance| gfs| VDS ³ 50 V, ID = 3.6 A| 2.1| 3.1| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 10

| –| 250| –|

pF

Output capacitance| Coss| –| 150| –
Reverse transfer capacitance| Crss| –| 29| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 7.3 A, VDS = 40 V,

See Fig. 6 and 13b

| –| 6.7| 10|

nC

Gate-source charge| Qgs| –| 1.8| 2.6
Gate-drain charge| Qgd| –| 3.2| 4.8
Turn-on delay time| td(on)|

VDD = 25 V, ID = 7.3 A,

Rg = 24 Ù, RD = 3.3 Ù, see fig. 10b

| –| 11| 17|

ns

Rise time| tr| –| 33| 50
Turn-off delay time| td(off)| –| 12| 18
Fall time| tf| –| 23| 35
Internal drain inductance| LD| Between lead,                           D

6 mm (0.25″) from

package and center of          G

die contact

S

| –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol D

showing the

integral reverse                     G

p – n junction diode                          S

| –| –| 8.2|

A

Pulsed diode forward current a| ISM| –| –| 33
Body diode voltage| VSD| TJ = 25 °C, IS = 8.2 A, VGS = 0 Vb| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 7.3 A, dI/dt = 100 A/μsb| 41| 86| 190| ns
Body diode reverse recovery charge| Qrr| 0.15| 0.33| 0.78| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 4 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 5 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 6 – Typical Source-Drain Diode Forward Voltage

Fig. 8 – Maximum Drain Current vs. Case Temperature

Fig. 9 – Breakdown Voltage vs. Temperature

Fig. 10 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a – Unclamped Inductive Test Circuit

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com

TO-252AA Case Outline

VERSION 1: FACILITY CODE = Y

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.38
A1| –| 0.127
b| 0.64| 0.88
b2| 0.76| 1.14
b3| 4.95| 5.46
C| 0.46| 0.61
C2| 0.46| 0.89
D| 5.97| 6.22
D1| 4.10| –
E| 6.35| 6.73
E1| 4.32| –
H| 9.40| 10.41
e| 2.28 BSC
e1| 4.56 BSC
L| 1.40| 1.78
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.01| 1.52

Note

• Dimension L3 is for reference only

VERSION 2: FACILITY CODE = N

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.39
A1| –| 0.13
b| 0.65| 0.89
b1| 0.64| 0.79
b2| 0.76| 1.13
b3| 4.95| 5.46
c| 0.46| 0.61
c1| 0.41| 0.56
c2| 0.46| 0.60
D| 5.97| 6.22
D1| 5.21| –
E| 6.35| 6.73
E1| 4.32| –
e| 2.29 BSC
H| 9.94| 10.34
| MILLIMETERS
---|---
DIM.| MIN.| MAX.
L| 1.50| 1.78
L1| 2.74 ref.
L2| 0.51 BSC
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.14| 1.49
L6| 0.65| 0.85
q| 0°| 10°
q1| 0°| 15°
q2| 25°| 35°

Notes

• Dimensioning and tolerance confirmed to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• The radius on the terminal is optional

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

Legal Disclaimer Notice

Disclaimer
ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies, or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation, or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential, or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for a particular purpose, non- infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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References

• applications.no
• IRFR010, SiHFR010 MOSFETs | Vishay

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